Abstract: There is provided a multi-layered ceramic electronic component including a ceramic body including a dielectric layer, first and second internal electrodes disposed within the ceramic body so as to face each other, having the dielectric layer interposed therebetween, and a first external electrode electrically connected to the first internal electrodes and a second external electrode electrically connected to the second internal electrodes, wherein the first and second external electrodes include a conductive metal and glass and further include a second phase material occupying an area of 1 to 80% with respect to an area of glass in the first and second external electrodes.

Abstract: In one embodiment, the method includes forming a conductive via structure in a base layer. The base layer has a first surface and a second surface, and the second surface is opposite the first surface. The method further includes removing the second surface of the base layer to expose the conductive via structure such that the conductive via structure protrudes from the second surface, and forming a first lower insulating layer over the second surface such that an end surface of the conductive via structure remains exposed by the first lower insulating layer.

Abstract: There is provided a multilayer ceramic electronic component including: a ceramic main body; a plurality of internal electrodes; and external electrodes formed on outer surfaces of the ceramic main body and electrically connected to the internal electrodes, wherein an average thickness of the external electrodes is 10 ?m or less, and when a thickness of the external electrodes in a central portion of the ceramic main body in a thickness direction is Tc and a thickness of the external electrodes at a point spaced apart from a central portion of a capacitance formation region in a thickness direction by a distance equal to 25% of a thickness (S) of the capacitance formation region is T1, 0.8?|T1/Tc|?1.0 is satisfied.

Abstract: A conductive via of a semiconductor device is provided extending in a vertical direction through a substrate, a first end of the conductive via extending through a first surface of the substrate, so that the first end protrudes in the vertical direction relative to the first surface of the substrate. An insulating layer is provided on the first end of the conductive via and on the first surface of the substrate. An upper portion of a mask layer pattern is removed so that a capping portion of the insulating layer that is on the first end of the conductive via is exposed. A portion of the insulating layer at a side of, and spaced apart from, the conductive via, is removed, to form a recess in the insulating layer. The capping portion of the insulating layer on the first end of the conductive via is simultaneously removed.

Abstract: A robot cleaner drives various brushes using a single motor. The robot cleaner includes a main body having a suction port, a main brush rotatably disposed in the suction port, an auxiliary brush rotatably disposed adjacent to the main brush and at least one side brush rotatably installed to move dust to the suction port, wherein the main brush, the auxiliary brush, and the at least one side brush are driven by a single motor in an interlocking fashion.

Abstract: A multilayer ceramic capacitor may include: an active part including a plurality of first and second internal electrodes; upper and lower cover layers; and first and second external electrodes including head parts and band parts. When a thickness of the upper or lower cover layer is defined as C, a width of a margin portion of the ceramic body in a width direction is defined as M, a cross-sectional area of the ceramic body in a width-thickness direction is defined as Ac, a cross-sectional area of the active part in a width-thickness direction in a portion thereof in which the first and second internal electrodes are overlapped with each other in a thickness direction is defined as Aa, and a width of the band part of the first or second external electrode is defined as B, 1.826?C/M?4.686, 0.2142?Aa/Ac?0.4911, and 0.5050?C/B?0.9094 may be satisfied.

Abstract: A multilayer ceramic electronic component includes: a ceramic main body; a plurality of internal electrodes laminated within the ceramic main body; and external electrodes formed on outer surfaces of the ceramic main body and electrically connected to the internal electrodes, wherein an average thickness of the external electrodes is 10 ?m or less, and when a thickness of the external electrodes in a central portion of the ceramic main body in a width direction is Tc and a thickness of the external electrodes at a lateral edge of a printed surface region of the internal electrodes is T1, 0.5?|T1/Tc|?1.0 is satisfied.

Abstract: A conductive via of a semiconductor device is provided extending in a vertical direction through a substrate, a first end of the conductive via extending through a first surface of the substrate, so that the first end protrudes in the vertical direction relative to the first surface of the substrate. An insulating layer is provided on the first end of the conductive via and on the first surface of the substrate. An upper portion of a mask layer pattern is removed so that a capping portion of the insulating layer that is on the first end of the conductive via is exposed. A portion of the insulating layer at a side of, and spaced apart from, the conductive via, is removed, to form a recess in the insulating layer. The capping portion of the insulating layer on the first end of the conductive via is simultaneously removed.

Abstract: There are provided a conductive paste composition for an external electrode, a multilayer ceramic electronic component using the same, and a manufacturing method thereof, and more specifically, a conductive paste composition for an external electrode, allowing for decreased blister and glass beading defects by improving a removal of residual carbon at low temperature before necking between metal particles is generated and the metal particles are densified during a firing process of the external electrode, a multilayer ceramic electronic component using the same, and a manufacturing method thereof.

Abstract: The inventive concept provides semiconductor devices having through-vias and methods for fabricating the same. The method may include forming a via-hole opened toward a top surface of a substrate and partially penetrating the substrate, forming a via-insulating layer having a first thickness on a bottom surface of the via-hole and a second thickness smaller than the first thickness on an inner sidewall of the via-hole, forming a through-via in the via-hole which the via-insulating layer is formed in, and recessing a bottom surface of the substrate to expose the through-via. Forming the via-insulating layer may include forming a flowable layer on the substrate, and converting the flowable layer into a first flowable chemical vapor deposition layer having the first thickness on the bottom surface of the via-hole.

Abstract: Embodiments of the present inventive concepts provide a wafer loader having one or more buffer zones to prevent damage to a wafer loaded in the wafer loader. The wafer loader may include a plurality of loading sections that protrude from a main body and are configured to be arranged at various locations along an edge of the wafer. Each of the loading sections may include a groove into which the edge of the wafer may be inserted. The loading section may include first and second protrusions having first and second inner sides, respectively, that face each other to define the groove therebetween. At least one of the first and second inner sides may include a recess to define the buffer zone.

Abstract: There is provided a multilayer ceramic capacitor including: a ceramic body including dielectric layers and internal electrodes; electrode layers connected to the internal electrodes; and a conductive resin layer formed on the electrode layers and including a first conductor, a second conductor having a fiber shape, and a base resin.

Abstract: A semiconductor device including a lower layer, an insulating layer on a first side of the lower layer, an interconnection structure in the insulating layer, a via structure in the lower layer. The via structure protrudes into the insulating layer and the interconnection structure.

Abstract: There are provided a multilayer ceramic electronic component comprising: a ceramic main body including a dielectric layer and having first and second main faces, third and fourth side faces opposed in a length direction, and fifth and sixth faces opposed in a width direction; first and second internal electrodes; and one or more first external electrodes formed on the fifth face and one or more second external electrodes formed on the sixth face, wherein the first and second external electrodes have an average thickness ranging from 3 ?m to 30 ?m, and when at least one of the first and second external electrodes is divided into three equal parts in a thickness direction, an area of glass in central area portions thereof is 35% to 80% of the total areas of the central area portions.

Abstract: The inventive concept provides semiconductor devices having through-vias and methods for fabricating the same. The method may include forming a via-hole opened toward a top surface of a substrate and partially penetrating the substrate, forming a via-insulating layer having a first thickness on a bottom surface of the via-hole and a second thickness smaller than the first thickness on an inner sidewall of the via-hole, forming a through-via in the via-hole which the via-insulating layer is formed in, and recessing a bottom surface of the substrate to expose the through-via. Forming the via-insulating layer may include forming a flowable layer on the substrate, and converting the flowable layer into a first flowable chemical vapor deposition layer having the first thickness on the bottom surface of the via-hole.

Abstract: There are provided a multilayer ceramic electronic component and a method of manufacturing the same. The multilayer ceramic electronic component includes: a ceramic body including a dielectric layer; first and second internal electrodes disposed within the ceramic body to face each other, while having the dielectric layer interposed therebetween; and first external electrodes electrically connected to first and second internal electrodes and second external electrodes formed on the first external electrodes, wherein the first and second external electrodes include a conductive metal and a glass, and when the second external electrodes are divided into three equal parts in a thickness direction, an area of the glass in central parts thereof with respect to an area of the central parts is 30 to 80%. Therefore, sealing properties of a chip is improved, whereby a multilayer ceramic electronic component having improved reliability may be implemented.

Abstract: Disclosed is a cathode active material having a core-shell structure. The core-shell cathode active material includes a core including a lithium transition metal oxide with excellent electrochemical properties and a shell formed by coating the surface of the core with a transition metal oxide. The formation of the shell by coating a transition metal oxide on the surface of the core comprising a lithium transition metal oxide prevents the structure of the lithium transition metal oxide from collapsing and inhibits the dissolution of manganese ions, enabling the fabrication of a hybrid capacitor with improved energy density and rate characteristics. Also disclosed is a method for producing the cathode active material.

Abstract: There is provided a composite conductive powder including a conductive particle, and a coating layer formed on a surface of the conductive particle and including glass, wherein when a thickness of the coating layer in a portion A in which the coating layer is the thickest, on the surface of the conductive particle is defined as a, and a thickness of the coating layer in a portion B forming an angle of 90° with respect to the portion A on the surface of the conductive particle, based on a center of the conductive particle is defined as b, 0.1?b/a?0.7 is satisfied.

Abstract: Semiconductor devices having through-vias and methods for fabricating the same are described. The method may include forming a hole opened toward a top surface of a substrate and partially penetrating the substrate, forming a sacrificial layer partially filling the hole, forming a through-via in the hole partially filled with the sacrificial layer, forming a via-insulating layer between the through-via and the substrate, and exposing the through-via through a bottom surface of the substrate. Forming the sacrificial layer may include forming an insulating flowable layer on the substrate, and constricting the insulating flowable layer to form a solidified flowable layer.

Abstract: Provided are semiconductor devices with a through electrode and methods of fabricating the same. The methods may include forming a via hole at least partially penetrating a substrate, the via hole having an entrance provided on a top surface of the substrate, forming a via-insulating layer to cover conformally an inner surface of the via hole, forming a buffer layer on the via-insulating layer to cover conformally the via hole provided with the via-insulating layer, the buffer layer being formed of a material whose shrinkability is superior to the via-insulating layer, forming a through electrode to fill the via hole provided with the buffer layer, and recessing a bottom surface of the substrate to expose the through electrode.