Abstract: A method of manufacturing a thin film transistor includes forming a semiconductor layer on a substrate; forming a gate insulating layer over the entire surface of the substrate to cover the semiconductor layer; depositing a conductive layer on the gate insulating layer; forming a first photosensitive pattern over the conductive layer; patterning the conductive layer according to the photosensitive pattern to form a gate electrode; and ion-doping an impurity into the semiconductor layer using the photosensitive pattern as a mask to form source and drain regions.

Abstract: A PMOS thin film transistor including an LDD region may be fabricated by implanting an ion dose at a specific concentration in order to form the LDD region with a certain range of sheet resistance at both ends of a gate electrode of the PMOS thin film transistor. A buffer layer, an active layer, the gate insulating layer and a gate electrode may be sequentially formed on the substrate of the transistor.

Abstract: A thin film transistor having a LDD structure that may improve its channel reliability and output characteristics. A semiconductor layer comprises source/drain regions, a channel region positioned between the source/drain regions, and an LDD region positioned between the channel region and a source/drain region, wherein a projected range of ions doped on the semiconductor layer extends to a first depth from the surface of the semiconductor layer in the LDD region.

Abstract: A method of manufacturing a thin film transistor includes forming a semiconductor layer on a substrate; forming a gate insulating layer over the entire surface of the substrate to cover the semiconductor layer; depositing a conductive layer on the gate insulating layer; forming a first photosensitive pattern over the conductive layer; patterning the conductive layer according to the photosensitive pattern to form a gate electrode; and ion-doping an impurity into the semiconductor layer using the photosensitive pattern as a mask to form source and drain regions.

Abstract: A method of manufacturing a thin film transistor includes forming a semiconductor layer on a substrate; forming a gate insulating layer over the entire surface of the substrate to cover the semiconductor layer; depositing a conductive layer on the gate insulating layer; forming a first photosensitive pattern over the conductive layer; patterning the conductive layer according to the photosensitive pattern to form a gate electrode; and ion-doping an impurity into the semiconductor layer using the photosensitive pattern as a mask to form source and drain regions.

Abstract: A method of manufacturing a thin film transistor includes forming a semiconductor layer on a substrate; forming a gate insulating layer over the entire surface of the substrate to cover the semiconductor layer; depositing a conductive layer on the gate insulating layer; forming a first photosensitive pattern over the conductive layer; patterning the conductive layer according to the photosensitive pattern to form a gate electrode; and ion-doping an impurity into the semiconductor layer using the photosensitive pattern as a mask to form source and drain regions.

Abstract: A method for manufacturing a color filter by thermal transfer using a laser beam with uniform energy distribution. The method includes forming a black matrix pattern on a substrate by photolithography. A transfer film having thermal color layers is placed on the substrate, and a laser beam with uniform energy distribution irradiates the transfer film to transfer the color layers onto the substrate. The substrate onto which the color layer has been transferred, is cured at 200˜300° C. Therefore, by using the laser beam with uniform energy distribution, or a laser beam which scans by dithering, for the thermal transfer, the quality of an image formed at the edges of the is improved and the surface roughness is reduced, resulting in an excellent color filter.

Abstract: A mechanical seal for reversing a flow of leakage between a rotational shaft and an inner wall of a stuffing box in a centrifugal pump is provided. The seal is ensured by a cylindrical flow-reversing impeller secured to the shaft to rotate as the shaft rotates, having flow-reversing means at the front end of the impeller. The flow-reversing means is positioned in a space defined between the shaft and the inner wall of the stuffing box. O-ring means are provided to prevent leakage during periods of non-rotation of the shaft, and securing means provide selective securing of the O-ring means.