Abstract: An apparatus and method for providing a multicast/broadcast service in a mobile communication system. Upon detecting an occurrence of a multicast data packet, an Internet Protocol (IP) terminal converts the multicast data packet into an alternative multicast data packet, and transmits the alternative multicast data packet to a femto Node B. Upon detecting an occurrence of a broadcast data packet, the IP terminal converts the broadcast data packet into an alternative broadcast data packet, and transmits the alternative broadcast data packet to the femto Node B.

Abstract: A correlation apparatus and method for frequency synchronization are provided. A frequency synchronization method of a receiver in a broadband wireless access communication system includes acquiring a highest correlation value by conducting a differential correlation of a variable interval between a received signal and a reference signal and performing a frequency synchronization according to the highest correlation value.

Abstract: Embodiments may provide a scan driver including a plurality of stages for simultaneously outputting first scan signals in a simultaneous driving period and for progressively outputting second scan signals in a progressive driving period, wherein each of the stages includes a first signal processing unit coupled to an input terminal, a first clock terminal, a third clock terminal, an auxiliary terminal, a first power source terminal, and a second power source terminal to output a first output signal and a second output signal, and a second signal processing unit coupled to a second clock terminal and the first power source terminal to receive the first output signal and the second output signal and to output a first scan signal and a second scan signal to an output terminal.

Abstract: A stage circuit includes a progressive driver and a concurrent driver, and a scan driver includes a plurality of stage circuits that are capable of supplying a scan signal to scan lines progressively and concurrently (e.g., simultaneously).

Abstract: A wafer temporary bonding method using silicon direct bonding (SDB) may include preparing a carrier wafer and a device wafer, adjusting roughness of a surface of the carrier wafer, and combining the carrier wafer and the device wafer using the SDB. Because the method uses SDB, instead of an adhesive layer, for a temporary bonding process, a module or process to generate and remove an adhesive is unnecessary. Also, a defect in a subsequent process, for example, a back-grinding process, due to irregularity of the adhesive may be prevented.

Abstract: A light guide plate for a backlight. The light guide plate includes: a light source unit for generating light; a light guide plate proximate to the light source unit and including an upper surface and a lower surface; and a light emission pattern configured to diffuse a portion of the light directed toward an image display panel, and a first straight pattern configured to channel the light along a direction substantially parallel to a direction of propagation of the light generated by the light source unit, both the light emission pattern and the first straight pattern being disposed on one of the upper surface and the lower surface of the light guide plate, in which the first straight pattern has peaks and valleys formed in alternating and repeating manner in a direction substantially perpendicular to a direction of propagation of the light generated by the light source unit.

Abstract: Optical input/output (I/O) devices, which include a substrate including a trench, a waveguide within the trench of the substrate; and a photodetector within the trench and optically connected to the waveguide. An upper surface of the photodetector is at a same level as an upper surface of the waveguide.

Abstract: Semiconductor devices having an optical transceiver include a cladding on a substrate, a protrusion vertically extending trough the cladding and materially in continuity with the substrate, and a coupler on the cladding and the protrusion.

Abstract: Provided is a synchronous dynamic random access memory (DRAM) semiconductor device including multiple output buffers, a strobe control unit and multiple strobe buffers. Each of the output buffers is configured to output one bit of data. The strobe control unit is configured to output multiple strobe control signals in response to an externally input signal. The strobe buffers are connected to the output buffers and the strobe control unit, and each of the strobe buffers is configured to output at least one strobe signal. At least some of the strobe buffers are activated in response to the strobe control signals, and the output buffers are activated in response to the strobe signals output by the activated strobe buffers.

Abstract: A method of manufacturing a buried wiring type substrate comprises implanting hydrogen ions into a single crystalline substrate through a first surface thereof to form an ion implantation region, forming a conductive layer comprising a metal on the first surface of the single crystalline substrate, forming an insulation layer comprising silicon oxide on the conductive layer, bonding the insulation layer to a support substrate to form a preliminary buried wiring type substrate, and separating the single crystalline substrate at the ion implantation region to form a single crystalline semiconductor layer on the conductive layer.

Abstract: Microelectronic packages are fabricated by stacking integrated circuits upon one another. Each integrated circuit includes a semiconductor layer having microelectronic devices and a wiring layer on the semiconductor layer having wiring that selectively interconnects the microelectronic devices. After stacking, a via is formed that extends through at least two of the integrated circuits that are stacked upon one another. Then, the via is filled with conductive material that selectively electrically contacts the wiring. Related microelectronic packages are also described.

Abstract: Acetylated cellulose ether and an article including the same. The acetylated cellulose ether has a degree of substitution (DS) of alkyl group of 1 to 2, a molar substitution (MS) of hydroxyalkyl group of 0 to 1, and a degree of substitution (DS) of acetyl group of 1 to 2.

Abstract: Provided is a flat display device, and more particularly, an active matrix (AM) flat display device having a thin film transistor (TFT). The flat display device includes a substrate, a plurality of TFTs (thin film transistors) provided on the substrate, each TFT comprising an active layer, a source electrode and a drain electrode that contact the active layer, and an ohmic contact layer interposed between the active layer and the source and drain electrodes, and a light emitting device electrically connected to the TFT, wherein the ohmic contact layer and a layer including the source and drain electrodes are formed to have the same pattern.

Abstract: An embodiment of a semiconductor device includes a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, and a first semiconductor layer formed over the first insulation layer. At least one gettering region is formed in at least one of the first insulating layer and the first semiconductor layer. The gettering region includes a plurality of gettering sites, and at least one gettering site includes one of a precipitate, a dispersoid, an interface with the dispersoid, a stacking fault and a dislocation.

Abstract: A pixel circuit includes: an OLED; a second transistor including gate, first, and second terminals coupled to a first scan line, a data line, and a first node, respectively; a fourth transistor including gate, first, and second terminals coupled to a third scan line, the first node, and a second node, respectively; a third transistor including gate, first, and second terminals coupled to a second scan line, a reference power source, and the second node, respectively; a fifth transistor including gate, first, and second terminals coupled to a light emission control line, a third node, and an anode of the OLED, respectively; a first capacitor coupled between the first and second nodes; a second capacitor coupled between the second and third nodes; and a first transistor including gate, first, and second terminals coupled to the first node, a first power source, and the third node, respectively.

Abstract: Novel influenza viruses A/Canine/Korea/01/07 (H3N2), A/Canine/Korea/02/07 (H3N2) and A/Canine/Korea/03/07 (H3N2) are disclosed. A vaccine composition comprising at least one of the viruses, a method for preventing or treating diseases resulting from influenza virus infection by administering the vaccine composition, and an assay kit for detecting the viruses are also disclosed.

Abstract: An inverter is capable of improving the reliability of driving. The inverter includes a first transistor coupled between a first power source and an output terminal of the inverter and having a gate electrode coupled to a first input terminal of the inverter, a second transistor coupled between a second power source and the output terminal, and having a gate electrode coupled to a second input terminal of the inverter, a first capacitor coupled between the gate electrode of the first transistor and the first input terminal, a second capacitor coupled between the gate electrode of the second transistor and the second input terminal, a third transistor coupled between the gate electrode of the first transistor and a reset power source, and a fourth transistor coupled between the gate electrode of the second transistor and the reset power source.

Abstract: Provided are an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes a substrate; at least one thin film transistor including a gate electrode including a metal oxide layer and a metal layer, a semiconductor layer including source/drain regions and a channel layer; at least one capacitor including a first electrode formed on a layer on which the gate electrode is formed by using a material forming the gate electrode, and a second electrode formed on a layer on which the source/drain electrodes are formed by using a material used to form the source/drain electrodes; and at least one organic light emitting device including a pixel electrode formed on a layer on which the gate electrode is formed by using a material used to form the gate electrode and connected to the source/drain electrodes via a contact hole.

Abstract: A semiconductor device may include an upper interconnection on a substrate and an anti-reflection pattern disposed on the upper interconnection. The anti-reflection pattern may include a compound including a metal, carbon and nitrogen.

Abstract: There is provided a packet processing apparatus for transmitting packets received from a plurality of networks through a Label Switched Path (LSP), the packet processing apparatus including: a packet classifier to classify a received packet to a control packet or a normal packet based on port information included in field information of the received packet, and to decide, if the received packet is a normal packet, a service type for transmitting the normal packet according to whether the normal packet is a reception packet or a transmission packet; and a packet processor to acquire LSP condition information or address information from the field information of the normal packet, and to transmit the received packet and update the header or address information of the received packet, according to the service type decided by the packet classifier, with reference to the LSP condition information or the address information.