Abstract: A memory system includes: a storage device for storing data; a system memory in which normal firmware and debugging firmware are stored; a firmware implementer for implementing the normal firmware or the debugging firmware; and a controller for controlling the storage device in a normal mode in which the memory system is driven by the normal firmware. When an error detected in the normal mode is uncorrectable, the controller uploads the debugging firmware stored in the system memory to the firmware implementer to change the normal mode to a debugging mode. The firmware implementer performs a debugging operation on the storage device by implementing the uploaded debugging firmware.

Abstract: Embodiments of the present disclosure relate to a memory system and an operating method of the memory system. According to embodiments of the present disclosure, when updating a target firmware, a memory system may receive, from a host, a temporary firmware for increasing the size of a buffer from a preset first size to a second size equal to or greater than the size of the target firmware, may load and execute the temporary firmware into a processor, may receive the target firmware from the host and write the target firmware to the buffer, and may write the target firmware to the memory device.

Abstract: A camera actuator comprises: a housing; a driving unit which is loaded in the housing, and which includes a vibration generator generating vibration from an input power source and a shaft vibrating in a first direction by means of the vibration generated by the vibration generator; an optical unit, which implements zoom and auto focusing while being driven in the first direction in the housing by means of the vibration of the shaft; and a frictional movement unit for connecting the shaft and the optical unit to transfer the first directional vibration of the shaft to the optical unit.

Abstract: A memory system includes: a storage device for storing data; a system memory in which normal firmware and debugging firmware are stored; a firmware implementer for implementing the normal firmware or the debugging firmware; and a controller for controlling the storage device in a normal mode in which the memory system is driven by the normal firmware. When an error detected in the normal mode is uncorrectable, the controller uploads the debugging firmware stored in the system memory to the firmware implementer to change the normal mode to a debugging mode. The firmware implementer performs a debugging operation on the storage device by implementing the uploaded debugging firmware.

Abstract: A memory system includes: a storage device for storing data; a system memory in which normal firmware and debugging firmware are stored; a firmware implementer for implementing the normal firmware or the debugging firmware; and a controller for controlling the storage device in a normal mode in which the memory system is driven by the normal firmware. When an error detected in the normal mode is uncorrectable, the controller uploads the debugging firmware stored in the system memory to the firmware implementer to change the normal mode to a debugging mode. The firmware implementer performs a debugging operation on the storage device by implementing the uploaded debugging firmware.

Abstract: A camera actuator for realizing auto focusing control and zoom functions and a folded zoom camera module including the same. The camera actuator includes a housing, a driving unit being mounted in the housing and having a vibration shaft and a vibration generator, a movable part mounted so as to correspond to the driving unit and configured to be moved by a driving force, a friction moving part configured to be moved in a first direction on the vibration shaft, and a connecting part mutually connecting the friction moving part and the movable part. The connecting part includes a protrusion or a recess formed on a side surface portion of the friction moving part facing the movable part, and includes a recess or a protrusion formed on a side surface portion of the movable part so as to be engaged with the protrusion or the recess.

Abstract: Provided herein is a zoom drive actuator comprising a first carrier movable along an optical axis, a second carrier capable of moving anterior or posterior to the first carrier along the optical axis, a housing enclosing the first and second carriers, a first coil unit; and a second coil unit, in which the first carrier comprises a first mount equipped with a first lens assembly, a first support to which a first magnet is attached, and a first guide placed on the side of the first mount opposite to the first support, in which the second carrier comprises a second mount equipped with a second lens assembly, a second support to which a second magnet is attached, and a second guide placed on the side of the second mount opposite to the second support and in which the first coil unit faces the first magnet and the second coil unit faces the second magnet and where the first carrier comprises a first space forming a corridor to allow the second guide to make a passage through it and the second carrier comprises a

Abstract: A three-terminal synaptic device includes a substrate; a source electrode and a drain electrode which are provided on the substrate and spaced apart from each other. The three-terminal synaptic device further includes: a channel layer provided on the substrate, the source electrode, and the drain electrode; an ion reservoir layer which stores active ions; a gate electrode provided on the ion reservoir layer; and an ion barrier layer disposed between the ion reservoir layer. In particular, the channel layer controls movement of active ions between the ion reservoir layer and the channel layer. The three-terminal synaptic device inhibits rapid movement of ions.

Abstract: A memory system includes: a storage device for storing data; a system memory in which normal firmware and debugging firmware are stored; a firmware implementer for implementing the normal firmware or the debugging firmware; and a controller for controlling the storage device in a normal mode in which the memory system is driven by the normal firmware. When an error detected in the normal mode is uncorrectable, the controller uploads the debugging firmware stored in the system memory to the firmware implementer to change the normal mode to a debugging mode. The firmware implementer performs a debugging operation on the storage device by implementing the uploaded debugging firmware.

Abstract: Embodiments of the present disclosure relate to a memory system and an operating method of the memory system. According to embodiments of the present disclosure, when updating a target firmware, a memory system may receive, from a host, a temporary firmware for increasing the size of a buffer from a preset first size to a second size equal to or greater than the size of the target firmware, may load and execute the temporary firmware into a processor, may receive the target firmware from the host and write the target firmware to the buffer, and may write the target firmware to the memory device.

Abstract: An actuator for driving zoom includes a first carrier, wherein the first carrier includes a first mounter and a first lens assembly is mounted on the first mounter, a first supporting part provided on a first side of the first mounter and extending in a first direction, and a first guider provided on a second side of the first mounter and extending in the first direction. A second carrier includes a second mounter, wherein a second lens assembly is mounted on the second mounter, a second supporting part provided on a first side of the second mounter and extending in a second direction opposite to the first direction, and a second guider provided on a second side of the second mounter and extending in the second direction. A first passage provided between the first mounter and the first supporting part and the second guider is inserted into the first passage.

Abstract: An image device includes a first active region and a second active region disposed on a substrate. Each of the first active region and the second active region includes a gate insulating layer disposed on the substrate and a gate electrode disposed on the gate insulating layer. At least one of the first active region and the second active region further includes a first passivation layer containing fluorine (F) disposed between the gate insulating layer and the gate electrode. A concentration of fluorine in the gate insulating layer is higher than a concentration of fluorine in the gate electrode.

Abstract: An image device includes a first active region and a second active region disposed on a substrate. Each of the first active region and the second active region includes a gate insulating layer disposed on the substrate and a gate electrode disposed on the gate insulating layer. At least one of the first active region and the second active region further includes a first passivation layer containing fluorine (F) disposed between the gate insulating layer and the gate electrode. A concentration of fluorine in the gate insulating layer is higher than a concentration of fluorine in the gate electrode.

Abstract: An exhaust gas recirculation (EGR) control method applied with a humidity sensor for preventing condensation to prevent corrosion caused by exhaust gas in a vehicle, may include a first step of measuring a temperature, humidity, and atmospheric pressure of intake air which is introduced from the outside of the vehicle and flows into the EGR; a second step of determining a molar fraction of water vapor included in the intake air by a combustion equation of the water vapor and determining water vapor pressure in the EGR; and a third step of opening an EGR valve so that EGR gas flows when the water vapor pressure in the EGR is lower than saturated water vapor pressure in the EGR.

Abstract: An exhaust gas recirculation (EGR) control method applied with a humidity sensor for preventing condensation to prevent corrosion caused by exhaust gas in a vehicle, may include a first step of measuring a temperature, humidity, and atmospheric pressure of intake air which is introduced from the outside of the vehicle and flows into the EGR; a second step of determining a molar fraction of water vapor included in the intake air by a combustion equation of the water vapor and determining water vapor pressure in the EGR; and a third step of opening an EGR valve so that EGR gas flows when the water vapor pressure in the EGR is lower than saturated water vapor pressure in the EGR.

Abstract: A controller includes a memory suitable for storing valid data of first data in a first data region and storing second data in a second data region, wherein the first data includes the valid data and dummy data; a translation unit suitable for performing a first translation operation of changing the first data to the valid data by eliminating the dummy data from the first data, performing a second translation operation of changing the valid data to the first data by adding the dummy data to the valid data, and exchanging the valid data with the memory; and a processor suitable for exchanging the first data with the translation unit, and exchanging the second data with the memory.

Abstract: Semiconductor devices and methods for fabricating the same are provided. A semiconductor device may include a substrate including first and second regions, a first interface film disposed on the substrate in the first region, a second interface film disposed on the substrate in the second region, a dielectric film disposed on the first and second interface films, a first metal film disposed on the dielectric film in the first region, and a second metal film disposed on the dielectric film in the second region. The first and second interface films may comprise an oxide of the substrate, the first and second metal films may comprise different materials, and the first and second interface films may have different thicknesses. Channels may be provided in the first and second regions, and the channels may be fin-shaped or wire-shaped. The metal films may have different oxygen content.

Abstract: A memory system may include: a memory device including a plurality of memory blocks configured in a plurality of super memory blocks; and a controller suitable for detecting two or more bad super memory blocks each including at least one bad block among the super memory blocks, selecting at least one victim super memory block among the bad super memory blocks, and replacing the at least one bad block in each remaining bad super memory block with at least one normal block of the victim super memory block.

Abstract: Semiconductor devices may include a substrate including first to third regions, with first to third interfacial layers in the first to third regions, respectively, first to third high-k dielectric films on the first to third interfacial layers, respectively, first to third work function adjustment films on the first to third high-k dielectric films, respectively, and first to third filling films on the first to third work function adjustment films, respectively. Concentrations of a dipole forming element in the first to third high-k dielectric films may be first to third concentrations. The first concentration may be greater than the second concentration, and the second concentration may be greater than the third concentration. Thicknesses of the first to third work function adjustment films may be first to third thicknesses. The first thickness may be less than the second thickness, and the second thickness may be less than the third thickness.

Abstract: Semiconductor devices and methods for fabricating the same are provided. A semiconductor device may include a substrate including first and second regions, a first interface film disposed on the substrate in the first region, a second interface film disposed on the substrate in the second region, a dielectric film disposed on the first and second interface films, a first metal film disposed on the dielectric film in the first region, and a second metal film disposed on the dielectric film in the second region. The first and second interface films may comprise an oxide of the substrate, the first and second metal films may comprise different materials, and the first and second interface films may have different thicknesses. Channels may be provided in the first and second regions, and the channels may be fin-shaped or wire-shaped. The metal films may have different oxygen content.