Abstract: An image device includes a first active region and a second active region disposed on a substrate. Each of the first active region and the second active region includes a gate insulating layer disposed on the substrate and a gate electrode disposed on the gate insulating layer. At least one of the first active region and the second active region further includes a first passivation layer containing fluorine (F) disposed between the gate insulating layer and the gate electrode. A concentration of fluorine in the gate insulating layer is higher than a concentration of fluorine in the gate electrode.

Abstract: An image device includes a first active region and a second active region disposed on a substrate. Each of the first active region and the second active region includes a gate insulating layer disposed on the substrate and a gate electrode disposed on the gate insulating layer. At least one of the first active region and the second active region further includes a first passivation layer containing fluorine (F) disposed between the gate insulating layer and the gate electrode. A concentration of fluorine in the gate insulating layer is higher than a concentration of fluorine in the gate electrode.

Abstract: An exhaust gas recirculation (EGR) control method applied with a humidity sensor for preventing condensation to prevent corrosion caused by exhaust gas in a vehicle, may include a first step of measuring a temperature, humidity, and atmospheric pressure of intake air which is introduced from the outside of the vehicle and flows into the EGR; a second step of determining a molar fraction of water vapor included in the intake air by a combustion equation of the water vapor and determining water vapor pressure in the EGR; and a third step of opening an EGR valve so that EGR gas flows when the water vapor pressure in the EGR is lower than saturated water vapor pressure in the EGR.

Abstract: An exhaust gas recirculation (EGR) control method applied with a humidity sensor for preventing condensation to prevent corrosion caused by exhaust gas in a vehicle, may include a first step of measuring a temperature, humidity, and atmospheric pressure of intake air which is introduced from the outside of the vehicle and flows into the EGR; a second step of determining a molar fraction of water vapor included in the intake air by a combustion equation of the water vapor and determining water vapor pressure in the EGR; and a third step of opening an EGR valve so that EGR gas flows when the water vapor pressure in the EGR is lower than saturated water vapor pressure in the EGR.

Abstract: A controller includes a memory suitable for storing valid data of first data in a first data region and storing second data in a second data region, wherein the first data includes the valid data and dummy data; a translation unit suitable for performing a first translation operation of changing the first data to the valid data by eliminating the dummy data from the first data, performing a second translation operation of changing the valid data to the first data by adding the dummy data to the valid data, and exchanging the valid data with the memory; and a processor suitable for exchanging the first data with the translation unit, and exchanging the second data with the memory.

Abstract: Semiconductor devices and methods for fabricating the same are provided. A semiconductor device may include a substrate including first and second regions, a first interface film disposed on the substrate in the first region, a second interface film disposed on the substrate in the second region, a dielectric film disposed on the first and second interface films, a first metal film disposed on the dielectric film in the first region, and a second metal film disposed on the dielectric film in the second region. The first and second interface films may comprise an oxide of the substrate, the first and second metal films may comprise different materials, and the first and second interface films may have different thicknesses. Channels may be provided in the first and second regions, and the channels may be fin-shaped or wire-shaped. The metal films may have different oxygen content.

Abstract: A memory system may include: a memory device including a plurality of memory blocks configured in a plurality of super memory blocks; and a controller suitable for detecting two or more bad super memory blocks each including at least one bad block among the super memory blocks, selecting at least one victim super memory block among the bad super memory blocks, and replacing the at least one bad block in each remaining bad super memory block with at least one normal block of the victim super memory block.

Abstract: Semiconductor devices may include a substrate including first to third regions, with first to third interfacial layers in the first to third regions, respectively, first to third high-k dielectric films on the first to third interfacial layers, respectively, first to third work function adjustment films on the first to third high-k dielectric films, respectively, and first to third filling films on the first to third work function adjustment films, respectively. Concentrations of a dipole forming element in the first to third high-k dielectric films may be first to third concentrations. The first concentration may be greater than the second concentration, and the second concentration may be greater than the third concentration. Thicknesses of the first to third work function adjustment films may be first to third thicknesses. The first thickness may be less than the second thickness, and the second thickness may be less than the third thickness.

Abstract: Semiconductor devices and methods for fabricating the same are provided. A semiconductor device may include a substrate including first and second regions, a first interface film disposed on the substrate in the first region, a second interface film disposed on the substrate in the second region, a dielectric film disposed on the first and second interface films, a first metal film disposed on the dielectric film in the first region, and a second metal film disposed on the dielectric film in the second region. The first and second interface films may comprise an oxide of the substrate, the first and second metal films may comprise different materials, and the first and second interface films may have different thicknesses. Channels may be provided in the first and second regions, and the channels may be fin-shaped or wire-shaped. The metal films may have different oxygen content.

Abstract: Semiconductor devices may include a substrate including first to third regions, with first to third interfacial layers in the first to third regions, respectively, first to third high-k dielectric films on the first to third interfacial layers, respectively, first to third work function adjustment films on the first to third high-k dielectric films, respectively, and first to third filling films on the first to third work function adjustment films, respectively. Concentrations of a dipole forming element in the first to third high-k dielectric films may be first to third concentrations. The first concentration may be greater than the second concentration, and the second concentration may be greater than the third concentration. Thicknesses of the first to third work function adjustment films may be first to third thicknesses. The first thickness may be less than the second thickness, and the second thickness may be less than the third thickness.

Abstract: A memory system may include: a memory device including a plurality of memory blocks configured in a plurality of super memory blocks; and a controller suitable for detecting two or more bad super memory blocks each including at least one bad block among the super memory blocks, selecting at least one victim super memory block among the bad super memory blocks, and replacing the at least one bad block in each remaining bad super memory block with at least one normal block of the victim super memory block.

Abstract: A controller includes a memory suitable for storing valid data of first data in a first data region and storing second data in a second data region, wherein the first data includes the valid data and dummy data; a translation unit suitable for performing a first translation operation of changing the first data to the valid data by eliminating the dummy data from the first data, performing a second translation operation of changing the valid data to the first data by adding the dummy data to the valid data, and exchanging the valid data with the memory; and a processor suitable for exchanging the first data with the translation unit, and exchanging the second data with the memory.

Abstract: A data storage device includes a nonvolatile memory device; and a controller suitable for controlling the nonvolatile memory device, wherein the controller performs a first read retry voltage setting operation, performs a first read retry control operation, performs a second read retry voltage setting operation after an internal operation time of the nonvolatile memory device according to the first read retry control operation passes, and performs a second read retry control operation.

Abstract: This invention relates to a process for producing exopolysaccharide from submerged mycelial culture of mushroom and more particularly, to the process for improving the exopolysaccharide production from the mycelia using the different bistage pH control technique comprising the steps of; (1) a process for the production of mycelia whose pH conditions in a batch medium are kept constant at 2 to 6 at the initial pH, while adding ammonium ion to the medium, and (2) a process for the production of exopolysaccharides whose pH conditions in a batch medium containing the mycelia are adjusted to 3 to 7. According to this invention, the optimized mycelial morphology and rheological properties in the culture media can lead to EPS production in more efficient and stable manner.