Abstract: Semiconductor devices may include a substrate including first to third regions, with first to third interfacial layers in the first to third regions, respectively, first to third high-k dielectric films on the first to third interfacial layers, respectively, first to third work function adjustment films on the first to third high-k dielectric films, respectively, and first to third filling films on the first to third work function adjustment films, respectively. Concentrations of a dipole forming element in the first to third high-k dielectric films may be first to third concentrations. The first concentration may be greater than the second concentration, and the second concentration may be greater than the third concentration. Thicknesses of the first to third work function adjustment films may be first to third thicknesses. The first thickness may be less than the second thickness, and the second thickness may be less than the third thickness.

Abstract: A memory system may include: a memory device including a plurality of memory blocks configured in a plurality of super memory blocks; and a controller suitable for detecting two or more bad super memory blocks each including at least one bad block among the super memory blocks, selecting at least one victim super memory block among the bad super memory blocks, and replacing the at least one bad block in each remaining bad super memory block with at least one normal block of the victim super memory block.

Abstract: A controller includes a memory suitable for storing valid data of first data in a first data region and storing second data in a second data region, wherein the first data includes the valid data and dummy data; a translation unit suitable for performing a first translation operation of changing the first data to the valid data by eliminating the dummy data from the first data, performing a second translation operation of changing the valid data to the first data by adding the dummy data to the valid data, and exchanging the valid data with the memory; and a processor suitable for exchanging the first data with the translation unit, and exchanging the second data with the memory.

Abstract: A data storage device includes a nonvolatile memory device; and a controller suitable for controlling the nonvolatile memory device, wherein the controller performs a first read retry voltage setting operation, performs a first read retry control operation, performs a second read retry voltage setting operation after an internal operation time of the nonvolatile memory device according to the first read retry control operation passes, and performs a second read retry control operation.

Abstract: This invention relates to a process for producing exopolysaccharide from submerged mycelial culture of mushroom and more particularly, to the process for improving the exopolysaccharide production from the mycelia using the different bistage pH control technique comprising the steps of; (1) a process for the production of mycelia whose pH conditions in a batch medium are kept constant at 2 to 6 at the initial pH, while adding ammonium ion to the medium, and (2) a process for the production of exopolysaccharides whose pH conditions in a batch medium containing the mycelia are adjusted to 3 to 7. According to this invention, the optimized mycelial morphology and rheological properties in the culture media can lead to EPS production in more efficient and stable manner.