Abstract: An LED encapsulant comprises a scattering particle mixture, which includes: (i) a linear polymer including a dimethylsiloxane group which has a vinyl end substituent and/or a linear polymer including a methylphenylsiloxane group which has a vinyl end substituent; and (ii) at least one vinyl-based resin selected from the group consisting of a vinyl-based ViMQ resin. An LED package comprising the encapsulant is also disclosed.

Abstract: A display device and a method of driving the same, win which the display device includes a light emitting element and a driving transistor supplying a driving current to the light emitting element, and in which one of a data voltage or a reverse bias voltage is applied to the driving transistor in an alternating manner, and the reverse bias voltage is an AC voltage.

Abstract: A display device includes: a first electrode; a second electrode; and an emitting material layer which is interposed between the first electrode and the second electrode, the emitting material layer being doped with an electric charge transport material of which content varies along a thickness direction and comprising a plurality of sub-layers staked in sequence.

Abstract: An insulating film according to an embodiment of the present invention has Chemical Formula 1 wherein the Rs are equal to or different from each other, m is an integer, the Rs have Chemical Formula 2: R=R1R2R3,??(2) and R1, R2, and R3 in the Chemical Formula 2 are one selected from Chemical Formulae 3, 4 and 5, respectively (n is an integer):

Abstract: A display device and a method of driving the same, win which the display device includes a light emitting element and a driving transistor supplying a driving current to the light emitting element, and in which one of a data voltage or a reverse bias voltage is applied to the driving transistor in an alternating manner, and the reverse bias voltage is an AC voltage.

Abstract: A display device and a driving method thereof include a plurality of light emitting elements arranged in a matrix form, for emitting different colors of light from each other, a plurality of driving transistors which supply a driving current to the light emitting elements, and photosensors which sense the amount of light emitted from the light emitting elements and produce a sense signal according to the sensed amount of light, the photosensors being positioned at a space between the plurality of light emitting elements.

Abstract: An insulating film according to an embodiment of the present invention has Chemical Formula 1 wherein the Rs are equal to or different from each other, m is an integer, the Rs have Chemical Formula 2: R=R1R2R3) ??(2), and R1, R2, and R3 in the Chemical Formula 2 are one selected from Chemical Formulae 3, 4 and 5, respectively (n is an integer):

Abstract: Pixels of red, blue and green are sequentially arranged in the row direction. The red and green pixels are alternately arranged in the column while the blue pixels being arranged between the neighboring red and each blue pixel is surrounded by the four red and green pixels. Gate lines are arranged at respective pixel rows. Data lines cross over the gate lines in an insulating manner and are arranged at the respective pixel columns. Pixel electrodes and thin film transistor are arranged at the respective pixels. At a predetermined pixel unit, the data lines to the two blue pixel are connected to each other. The pixel electrodes are overlapped with the gate lines or data lines via a passivation layer of low dielectric organic material or insulating material such as SiOC, SiOF.

Abstract: The present invention relates to a process for vapor depositing alow dielectric insulating film, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device.

Abstract: The present invention relates to a method of forming a pattern on a substrate and a method of manufacturing a liquid crystal display panel using the same. In order to decrease stitch defect, the shot boundary lines for respective layers of patterns do not overlap each other to be dispersed. Specifically, according to a method of forming patterns of the present invention, after a first material layer is first formed on a substrate, a first pattern is formed by performing a first photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the first material layer. Subsequently, after a second material layer is formed on the first pattern, a second pattern is formed by performing a second photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the second material layer. The shot boundary line in the second photo etching is spaced apart from the shot boundary line in the first photo etching.

Abstract: Pixels of red, blue and green are sequentially arranged in the row direction. The red and green pixels are alternately arranged in the column while the blue pixels being arranged between the neighboring red and each blue pixel is surrounded by the four red and green pixels. Gate lines are arranged at respective pixel rows. Data lines cross over the gate lines in an insulating manner and are arranged at the respective pixel columns. Pixel electrodes and thin film transistor are arranged at the respective pixels. At a predetermined pixel unit, the data lines to the two blue pixel are connected to each other. The pixel electrodes are overlapped with the gate lines or data lines via a passivation layer of low dielectric organic material or insulating material such as SiOC, SiOF.

Abstract: Low dielectric constant films with improved elastic modulus. An SiO2-containing plasma treated coating is provided, the coating being formed by providing a porous network coating produced from a resin molecule containing at least 2 Si—H groups, curing the porous network coating by heating to a temperature sufficient to convert the porous network coating into a ceramic, and plasma treating the porous network coating to reduce an amount of Si—H bonds. Plasma treating the porous network coating provides a coating with improved modulus, but with a higher dielectric constant. Accordingly, the plasma treated coating can be annealed to provide an annealed, plasma treated coating having a lower dielectric constant and a comparable elastic modulus. The annealed, SiO2-containing plasma treated coating can have a dielectric constant between about 1.1 and about 3.5, and an elastic modulus greater than or about 4 GPa.

Abstract: The present invention relates to a method of forming a pattern on a substrate and a method of manufacturing a liquid crystal display panel using the same. In order to decrease stitch defect, the shot boundary lines for respective layers of patterns do not overlap each other to be dispersed. Specifically, according to a method of forming patterns of the present invention, after a first material layer is first formed on a substrate, a first pattern is formed by performing a first photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the first material layer. Subsequently, after a second material layer is formed on the first pattern, a second pattern is formed by performing a second photo etching including divisional light exposure with at least two areas across at least one shot boundary line on the second material layer. The shot boundary line in the second photo etching is spaced apart from the shot boundary line in the first photo etching.

Abstract: The present invention relates to a process for vapor depositing a low dielectric insulating film, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device.

Abstract: Low dielectric constant films with improved elastic modulus. An SiO2-containing plasma treated coating is provided, the coating being formed by providing a porous network coating produced from a resin molecule containing at least 2 Si—H groups, curing the porous network coating by heating to a temperature sufficient to convert the porous network coating into a ceramic, and plasma treating the porous network coating to reduce an amount of Si—H bonds. Plasma treating the porous network coating provides a coating with improved modulus, but with a higher dielectric constant. Accordingly, the plasma treated coating can be annealed to provide an annealed, plasma treated coating having a lower dielectric constant and a comparable elastic modulus. The annealed, SiO2-containing plasma treated coating can have a dielectric constant between about 1.1 and about 3.5, and an elastic modulus greater than or about 4 GPa.

Abstract: Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si—H groups where the coating has been thermally cured and has a dielectric constant in the range of from about 1.1 to about 3.5, and plasma treating the coating to convert the coating into porous silica. Plasma treatment of the network coating yields a coating with improved modulus, but with a higher dielectric constant. The coating is plasma treated for between about 15 and 120 seconds at a temperature less than or about 350° C. The plasma treated coating can optionally be annealed. Rapid thermal processing (RTP) of the plasma treated coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus as compared to the initial porous coating. The annealing temperature is preferably in excess of or about 350° C., and the annealing time is preferably at least or about 120 seconds.

Abstract: Nanoporous silicone resins and silicone resin films having low dielectric constants and a method for preparing such nanoporous silicone resins. The silicone resin comprises the reaction product of a mixture comprising (A) 15-70 mol % of a tetraalkoxysilane described by formula Si(OR1)4,  where each R1 is an independently selected alkyl group comprising 1 to about 6 carbon atoms, (B) 12 to 60 mol % of a hydrosilane described by formula HSiX3,  where each X is an independently selected hydrolyzable substituent, (C) 15 to 70 mole percent of an organotrialkoxysilane described by formula R2Si(OR3)3,  where R2 is a hydrocarbon group comprising about 8 to 24 carbon atoms or a substituted hydrocarbon group comprising a hydrocarbon chain having about 8 to 24 carbon atoms and each R3 is an independently selected alkyl group comprising 1 to about 6 carbon atoms; in the presence of (D) water, (E) hydrolysis catalyst, and (F) organic solvent for the reaction product.

Abstract: Soluble silicone resin compositions having good solution stability and a method for their preparation. The silicone resin comprises the reaction product of a mixture comprising (A) 15-70 mol % of a tetraalkoxysilane described by formula Si(OR1)4, where each R1 is an independently selected alkyl group comprising 1 to about 6 carbon atoms, (B) 12 to 60 mol % of a hydrosilane described by formula HSiX3, where each X is an independently selected hydrolyzable substituent, (C) 15 to 70 mole percent of an organotrialkoxysilane described by formula R2Si(OR3)3, where R2 is a hydrocarbon group comprising about 8 to 24 carbon atoms or a substituted hydrocarbon group comprising a hydrocarbon chain having about 8 to 24 carbon atoms and each R3 is an independently selected alkyl group comprising 1 to about 6 carbon atoms; in the presence of (D) water, (E) hydrolysis catalyst, and (F) organic solvent for the reaction product.

Abstract: Nanoporous silicone resins and silicone resin films having low dielectric constants and a method for preparing such nanoporous silicone resins.

Abstract: A coating is formed on a substrate by depositing a solution comprising a resin containing at least 2 Si—H groups and a solvent in a manner in which at least 5 volume % of the solvent remains in the coating after deposition followed by exposing the coating to an environment comprising a basic catalyst and water at a concentration sufficient to cause condensation of the Si—H groups and evaporating the solvent from the coating to form a porous network coating. The method of the invention is particularly useful for applying low dielectric constant coatings on electronic devices.