Abstract: A device includes a first electrode and a second electrode, an active layer between the first electrode and the second electrode and a plurality of auxiliary layers between the first electrode and the active layer. The auxiliary layers include first and second auxiliary layers, the first auxiliary layer proximate to the active layer, the second auxiliary layer proximate to the second electrode. An energy level of the active layer, an energy level of the first auxiliary layer, an energy level of the second auxiliary layer, and a work function of the first electrode become deeper sequentially or shallower sequentially.

Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, the definition of each substituent is as described in the detailed description.

Abstract: A composition for a photoelectric device includes a p-type semiconductor compound represented by Chemical Formula 1 and an n-type semiconductor compound: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: An electronic device includes a plurality of pixel electrodes, an active layer on the plurality of pixel electrodes, an opposed electrode on the active layer and covering an entirety of an upper surface of the active layer, and a first encapsulation film on the opposed electrode wherein the opposed electrode and the first encapsulation film have a common planar shapes.

Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: A squarylium compound has high transmittance in a visible wavelength spectrum of light and is configured to selectively absorb light in an infrared/near infrared wavelength spectrum of light.

Abstract: An OLED panel for implementing biometric recognition influencing an aperture ratio of an OLED light emitter i includes a substrate, an OLED on the substrate, and a driver on the substrate. The OLED may emit visible light, and the driver may drive the OLED. The driver may include a visible light sensor configured to detect the visible light emitted by the OLED, and the visible light sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate. The OLED panel may include a near infrared ray OLED that is configured to emit near infrared rays, and the driver may include a near infrared ray sensor configured to detect near infrared rays emitted by the near infrared ray OLED. The near infrared ray sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate.

Abstract: In a signal processing apparatus, a photoelectric conversion member includes a first photoelectric conversion layer configured to photoelectrically convert at least one of blue light or red light, and a second photoelectric conversion layer on an incident light surface of the first photoelectric conversion layer and configured to photoelectrically convert green light. An interpolation circuit is configured to interpolate at least one of a blue light signal or a red light signal obtained by photoelectric conversion in the first photoelectric conversion layer L1, using a green light signal obtained by photoelectric conversion in the second photoelectric conversion layer L2. An absorption correction circuit is configured to perform absorption correction on the green light signal, using at least one of the blue light signal or the red light signal that are interpolated by the interpolation circuit.

Abstract: An electronic device may include an edge touch screen including a main display region and an edge display region extending from the main display region each including one or more of red pixels, near infrared ray pixels, and sensor pixels for detecting light with different wavelengths; and a controller configured to, drive the edge touch screen in response to a touch input for the edge display region being maintained for a set time by instructing at least one selected red pixel of the red pixels and at least one selected near infrared ray pixel of the near infrared ray pixels corresponding to a position of the touch input to emit light, and measure biometrics based on light amounts of light of different wavelengths received from at least one selected sensor pixel of the sensor pixels corresponding to the position of the touch input.

Abstract: A composition for a photoelectric device includes a p-type semiconductor compound represented by Chemical Formula 1 and an n-type semiconductor compound, and an image sensor and an electronic device including the same: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: An electronic device includes a display panel and a biometric sensor. The display panel includes a light emitter. The biometric sensor is stacked with the display panel and is configured to detect light emitted from the display panel and reflected by a recognition target that is external to the electronic device. The biometric sensor includes a silicon substrate and a photoelectric conversion element on the silicon substrate. The photoelectric conversion element includes a photoelectric conversion layer having wavelength selectivity.

Abstract: A squarylium compound has high transmittance in a visible wavelength spectrum of light and is configured to selectively absorb light in an infrared/near infrared wavelength spectrum of light.

Abstract: A fingerprint sensor may include first and second electrodes, a light absorption layer isolated from direct contact with the first and second electrodes, and an insulation layer between the first electrode and the light absorption layer and further between the second electrode and the light absorption layer. A reflective layer may be between the light absorption layer and the first electrode. The insulation layer may include a first insulation layer between the first electrode and the light absorption layer, and a second insulation layer between the second electrode and the light absorption layer. A fingerprint sensor array including a plurality of fingerprint sensors may at least partially expose a plurality of sub-pixels of a display panel on which the fingerprint sensor array is located.

Abstract: An OLED panel for implementing biometric recognition influencing an aperture ratio of an OLED light emitter i includes a substrate, an OLED on the substrate, and a driver on the substrate. The OLED may emit visible light, and the driver may drive the OLED. The driver may include a visible light sensor configured to detect the visible light emitted by the OLED, and the visible light sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate. The OLED panel may include a near infrared ray OLED that is configured to emit near infrared rays, and the driver may include a near infrared ray sensor configured to detect near infrared rays emitted by the near infrared ray OLED. The near infrared ray sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate.

Abstract: An image sensor may include a substrate, and a plurality of wavelength separation filters on the substrate and arranged along an in-plane direction of the substrate. The wavelength separation filters include a first wavelength separation filter configured to selectively transmit incident light in the first wavelength spectrum, and photoelectrically convert the incident light in at least one of the second wavelength spectrum or the third wavelength spectrum, a second wavelength separation filter configured to selectively transmit the incident light in the second wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the third wavelength spectrum, and a third wavelength separation filter configured to selectively transmit the incident light in the third wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the second wavelength spectrum.

Abstract: A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.

Abstract: A fingerprint sensor may include first and second electrodes, a light absorption layer isolated from direct contact with the first and second electrodes, and an insulation layer between the first electrode and the light absorption layer and further between the second electrode and the light absorption layer. A reflective layer may be between the light absorption layer and the first electrode. The insulation layer may include a first insulation layer between the first electrode and the light absorption layer, and a second insulation layer between the second electrode and the light absorption layer. A fingerprint sensor array including a plurality of fingerprint sensors may at least partially expose a plurality of sub-pixels of a display panel on which the fingerprint sensor array is located.

Abstract: An image sensor includes first and second organic photoelectric conversion devices stacked in a vertical direction and configured to selectively absorb light in a part of visible wavelength spectrum and non-selectively absorb light in the visible wavelength spectrum, respectively. The first organic photoelectric conversion device may selectively absorb light in a blue wavelength spectrum, and the second organic photoelectric conversion device may selectively absorb light in a green wavelength spectrum. The image sensor may have stacked organic photoelectric conversion devices configured to selectively absorb light in a red wavelength spectrum and a green wavelength spectrum, respectively.

Abstract: An optical wireless communication system includes an optical wireless transmitter configured to emit a discrete-time signal of first light, second light, and third light having different wavelength spectra; and a light-receiving sensor including an optical wireless receiver including first, second, and third photoelectric conversion devices configured to convert discrete-time signals of the first, second, and third light beams into first, second, and third photoelectric conversion signals, respectively, wherein the second photoelectric conversion device at least partially overlaps the first photoelectric conversion device, and the third photoelectric conversion device at least partially overlaps at least one photoelectric conversion device of the first photoelectric conversion device or the second photoelectric conversion device, and at least one photoelectric conversion device of the first photoelectric conversion device, the second photoelectric conversion device, or the third photoelectric conversion devic

Abstract: A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.