Patents by Inventor Kyung Do Kim

Kyung Do Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080286515
    Abstract: A vacuum insulation panel and an insulation structure of a refrigerator applying the same are disclosed. The vacuum insulation panel comprises: a sealing cover (120) having an outermost layer exposed to the outside, a gas shielding layer stacked on the bottom surface of the outermost layer and formed of a thin metal sheet and a metal deposition film, and a heating-fusion bonding layer stacked on the bottom surface of the gas shielding layer and formed of an octane-base material; a core material (110) sealed by the sealing cover (120) in contact with the heating-fusion bonding layer, and provided with an extended insulation portion (130) some parts of which are extended between the bonding portions formed at the sealing cover (120); and a gas permeation preventing layer (125) formed on the sealing cover (120), so that can prevent an external air or moisture from penetrating into a vacuum insulation panel.
    Type: Application
    Filed: October 17, 2006
    Publication date: November 20, 2008
    Inventors: Dong-Ju Jung, Young-Bae Kim, Kyung-Do Kim, Sang-Eui Hong
  • Publication number: 20080280090
    Abstract: Disclosed are a vacuum insulation panel and an insulation structure of a refrigerator using the same. The vacuum insulation panel comprises a core material formed by gather glass fiber, a getter having a container to receive an absorbent having quicklime of 90 wt % or greater as a main component, and a sealing cover formed to surround the core material and the getter. The core material can be formed at low cost in such a manner that glass fiber is tangled and gathered by penetrating glass wool having glass fiber using a needle. Since the getter is made of quicklime that can first remove water corresponding to a main component of the absorbent, the getter can be manufactured at low cost and has improved insulation efficiency.
    Type: Application
    Filed: November 14, 2006
    Publication date: November 13, 2008
    Inventors: Kyung-Do Kim, Dong-Ju Jung, Young-Bae Kim
  • Publication number: 20080079068
    Abstract: A semiconductor device includes a silicon substrate; a device isolation structure formed in the silicon substrate to delimit an active region which has a pair of gate forming areas, a drain forming area between the gate forming areas, and source forming areas outside the gate forming areas; an asymmetric bulb-type recess gate formed in each gate forming area of the active region and having the shape of a bulb on the lower end portion of the sidewall thereof facing the source forming area; and source and drain areas respectively formed on the surface of the substrate on both sides of the asymmetric bulb-type recess gate.
    Type: Application
    Filed: December 29, 2006
    Publication date: April 3, 2008
    Inventor: Kyung Do Kim
  • Publication number: 20080079071
    Abstract: A semiconductor device has a pair of gate forming areas, a drain forming area between the gate forming areas, and source forming areas outside of the gate forming areas in the active region. Recess gates are formed in the respective gate forming areas of the active region and depressed inward on the sidewalls of lower buried portions thereof formed in the substrate, which face the drain forming area, such that each of the lower buried portions has a decreased width, thereby creating an asymmetrical structure in which the distance between the lower buried portions of the recess gates is greater than the distance between upper buried portions of the recess gates. Source and drain areas formed on the surface of the substrate on both sides of the recess gates.
    Type: Application
    Filed: March 5, 2007
    Publication date: April 3, 2008
    Inventor: Kyung Do KIM
  • Patent number: 7276758
    Abstract: Disclosed is a non-volatile memory having three data states and a method for manufacturing the same. The non-volatile memory includes a silicon substrate having a device separation film; a floating gate formed on the silicon substrate; a tunnel oxide film interposed between the silicon substrate and the floating gate below both ends of the floating gate; a ferroelectric substance interposed between the silicon substrate and the floating gate inside the tunnel oxide film; a diffusion barrier film enclosing the ferroelectric substance; a control gate formed on the substrate including the floating gate; a gate oxide film formed below the control gate; spacers formed on both lateral walls of the laminated floating gate and control gate including the tunnel oxide film and gate oxide film, respectively; and source/drain regions formed within the substrate surfaces on both sides of the control gate including the spacers, respectively.
    Type: Grant
    Filed: May 4, 2005
    Date of Patent: October 2, 2007
    Assignee: Hynix Semiconductor Inc.
    Inventor: Kyung Do Kim
  • Publication number: 20070152551
    Abstract: Disclosed are a fixing structure of insulation panels and a prefabricated refrigerator with the same. The fixing structure of insulation panels includes a recess recessed on one surface of a first insulation panel having an insulation portion inside a casing, and a protrusion formed to be inserted into the recess, on one surface of a second insulation panel having an insulation portion inside a casing, wherein the insulation portions of nonmetal material are exposed to a bottom of the recess and a front end of the protrusion so as to shield a transmission path of heat flowed along a casing contact surface of the insulation panels, thereby improving insulation efficiency.
    Type: Application
    Filed: January 3, 2007
    Publication date: July 5, 2007
    Applicant: LG ELECTRONICS INC.
    Inventors: Young-Bae Kim, Kyung-Do Kim, Dong-Ju Jung