Abstract: A light emitting module and a display device having the same, are discussed. The light emitting module according to an embodiment comprises a board, a plurality of light emitting devices on the board, and a phosphor film covering the light emitting devices and covering and extending along areas between the light emitting devices.

Abstract: A light unit includes a bottom cover, a light source unit, an optical sheet unit on the bottom cover, and a reflective support member. The reflective support member includes a reflection plate for reflecting light and a guide pin for supporting the optical sheet unit in the bottom cover.

Abstract: Provided are a light emitting module and a backlight unit. The light emitting module comprises a module board comprising a plurality of first and second pads and a plurality of protrusion holes, a heatsink plate corresponding to a second surface opposite to a first surface of the module board, the heatsink plate comprising a plurality of protrusions respectively inserted into the protrusion holes of the module board, and a plurality of light emitting devices, each comprising a heatsink frame connected to the protrusions of the heatsink plate which comprises a first frame part on which the plurality of protrusions are disposed and a second frame part folded from the first frame part and disposed under the module board.

Abstract: The present invention provides a magnetic tunnel junction structure, including a first magnetic layer having a fixed magnetization direction and a second magnetic layer having a reversible magnetization direction. A non-magnetic layer is formed between the first magnetic layer and the second magnetic layer and a third magnetic layer allows the magnetization direction of the second magnetic layer to be inclined with respect to a plane of the second magnetic layer by a magnetic coupling to the second magnetic layer with a vertical magnetic anisotropic energy thereof larger than a horizontal magnetic anisotropic energy thereof. A crystal-structure separation layer is formed between the second magnetic layer and the third magnetic layer for separating a crystal orientation between the second and the third magnetic layers.

Abstract: The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes i) a first magnetic layer having an switchable magnetization direction, ii) a nonmagnetic layer provided on the first magnetic layer, iii) a second magnetic layer provided on the nonmagnetic layer and having a fixed magnetization direction, iv) an oxidation-preventing layer provided on the second magnetic layer, v) a third magnetic layer provided on the oxidation-preventing layer and fixing the magnetization direction of the second magnetic layer through magnetic coupling with the second magnetic layer, and vi) an antiferromagnetic layer provided on the third magnetic layer and fixing a magnetization direction of the third magnetic layer.

Abstract: Disclosed is a magnetic tunnel junction structure having perpendicular anisotropic free layers, and it could be accomplished to reduce a critical current value required for switching and maintain thermal stability even if a device is fabricated small in size, by maintaining the magnetization directions of the free magnetic layer and the fixed magnetic layer constituting the magnetic tunnel junction structure perpendicular to each other.

Abstract: A method for simulating fluid flow includes: discretizing a space in which a fluid flows into a regular lattice; assuming that fluid particles repetitively move and collide in the lattice; deriving a univariate polynomial equation by comparing the n-th (n is a non-negative integer) order momentum of velocity between the Maxwell-Boltzmann distribution and the discretized Maxwell-Boltzmann distribution; calculating the weight coefficients corresponding to the discrete velocities of the fluid particles based on the univariate polynomial equation; and deriving a lattice Boltzmann model using the weight coefficients. A lattice Boltzmann model with superior stability and accuracy may be derived easily.

Abstract: An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.

Abstract: An InSb-based switching device, which operates at room temperature by using a magnetic field controlled avalanche process for applying to magneto-logic elements, is provided. A switching device of one embodiment includes a p-type semiconductor layer; an n-type semiconductor layer; and contact layers disposed on one of the p-type and n-type semiconductor layers, the p-type semiconductor layer being in contact with the n-type semiconductor layer such that a current can be applied through the contact layers to the p-type and n-type semiconductor layers to cause a current flow from one of the contact layers to the p-type and n-type semiconductor layers and from the p-type and n-type semiconductor layers to the other of the contact layers, whereby the current flow can be controlled by an intensity of a magnetic field applied to the p-type and n-type semiconductor layers substantially perpendicularly thereto.

Abstract: An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.

Abstract: A light unit and a display device having the light unit are provided. The light unit comprises a plurality of light emitting modules each comprising a board and a light emitting device on the board, a bottom cover under the light emitting modules, a module connecting member that electrically interconnects the light emitting modules using an elastic body and is fixed on the bottom cover, and an optical sheet unit above the light emitting module.

Abstract: Disclosed is a magnetic tunnel junction structure having perpendicular anisotropic free layers, and it could be accomplished to reduce a critical current value required for switching and maintain thermal stability even if a device is fabricated small in size, by maintaining the magnetization directions of the free magnetic layer and the fixed magnetic layer constituting the magnetic tunnel junction structure perpendicular to each other.

Abstract: The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes i) a first magnetic layer having an switchable magnetization direction, ii) a nonmagnetic layer provided on the first magnetic layer, iii) a second magnetic layer provided on the nonmagnetic layer and having a fixed magnetization direction, iv) an oxidation-preventing layer provided on the second magnetic layer, v) a third magnetic layer provided on the oxidation-preventing layer and fixing the magnetization direction of the second magnetic layer through magnetic coupling with the second magnetic layer, and vi) an antiferromagnetic layer provided on the third magnetic layer and fixing a magnetization direction of the third magnetic layer.

Abstract: The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A100-xBx)100-yCy; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (A100-xBx)100-yCy. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).

Abstract: A hybrid semiconductor-ferromagnet device is a device which has micromagnets (Co) deposited on semiconductor (InAs) two-dimensional electrons, and which has a junction structure of positive and negative magnetic field regions using a stray field resulting from the micromagnets. The magnetoresistance measured in the hybrid semiconductor-ferromagnet device has an asymmetrical hall resistance profile, and a change in magnetoresistance thereof is very large. The measured data is well consistent with the calculated results using a diffusive mode and a ballistic model.

Abstract: Provided are a light unit and a display apparatus comprising the same. The light unit comprises a bottom cover comprising a groove; a light source unit generating light in the bottom cover; an optical sheet unit on the bottom cover; and a reflective support member reflecting light and supporting the optical sheet unit in the bottom cover.

Abstract: The present invention provides an InSb-based switching device operating at room temperature by using a magnetic field controlled avalanche process for applying to magneto-logic elements. A switching device of one embodiment includes a p-type semiconductor layer; an n-type semiconductor layer; and contact layers disposed on one of the p-type and n-type semiconductor layers, the p-type semiconductor layer being in contact with the n-type semiconductor layer such that a current can be applied through the contact layers to the p-type and n-type semiconductor layers to cause a current flow from one of the contact layers to the p-type and n-type semiconductor layers and from the p-type and n-type semiconductor layers to the other of the contact layers, whereby the current flow can be controlled by an intensity of a magnetic field applied to the p-type and n-type semiconductor layers substantially perpendicularly thereto.

Abstract: An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.

Abstract: A light emitting module and a display device including the light emitting module are provided. The light emitting module may include a metal plate, a board, and a plurality of light emitting diodes. The board may be attached to a side surface of the metal plate, and light emitting diodes may be arranged on the board.

Abstract: An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.