Abstract: A light emitting module and a display device having the same, are discussed. The light emitting module according to an embodiment comprises a board, a plurality of light emitting devices on the board, and a phosphor film covering the light emitting devices and covering and extending along areas between the light emitting devices.

Abstract: The present invention provides a magnetic tunnel junction structure, including a first magnetic layer having a fixed magnetization direction; a second magnetic layer having a reversible magnetization direction; a non-magnetic layer formed between the first magnetic layer and the second magnetic layer; a third magnetic layer allowing the magnetization direction of the second magnetic layer to be inclined with respect to a plane of the second magnetic layer by a magnetic coupling to the second magnetic layer, and having a perpendicular magnetic anisotropic energy thereof larger than an in-plane magnetic anisotropic energy thereof; and a crystal-structure separation layer formed between the second magnetic layer and the third magnetic layer for separating a crystallographic structure between the second and the third magnetic layers.

Abstract: Provided is a current induced switching magnetoresistance device comprising a magnetic multilayer composed of a first ferromagnetic layer, a nonferromagnetic layer, and a second ferromagnetic layer, wherein the first ferromagnetic layer has an upper electrode, the second ferromagnetic layer pinned by an antiferromagnet, wherein the antiferromagnet contains a lower electrode at its lower part, and the second ferromagnetic layer is embedded with a nano oxide layer. It is preferable to have at least a part of the lower electrode in contact with the second ferromagnetic layer. The magnetoresistance device provides a lower critical current (Ic) for the magnetization reversal and has an increased resistance.

Abstract: Provided are a multilayer board and a light-emitting module having the same. The light-emitting module comprises a light-emitting diode chip and a multilayer board. The multilayer board is electrically connected to the light-emitting diode chip and comprises a nonconductive heat sink via and a thin copper layer.

Abstract: A light unit and a display device having the light unit are provided. The light unit comprises a plurality of light emitting modules each comprising a board and a light emitting device on the board, a bottom cover under the light emitting modules, a module connecting member that electrically interconnects the light emitting modules using an elastic body and is fixed on the bottom cover, and an optical sheet unit above the light emitting module.

Abstract: Provided are a flash apparatus and a portable terminal having the same. The flash apparatus includes a main body, a light emitting diode, a lens, a lens housing, and a lens transfer part. The main body has an opening part, and the light emitting diode is disposed in the opening part. The lens is disposed on a light emitting path of the light emitting diode. The lens housing is disposed in the inside of the opening part to fix the lens, and the lens transfer part moves the lens housing in one of an upper direction and a lower direction.

Abstract: An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.

Abstract: A hybrid semiconductor-ferromagnet device is a device which has micromagnets (Co) deposited on semiconductor (InAs) two-dimensional electrons, and which has a junction structure of positive and negative magnetic field regions using a stray field resulting from the micromagnets. The magnetoresistance measured in the hybrid semiconductor-ferromagnet device has an asymmetrical hall resistance profile, and a change in magnetoresistance thereof is very large. The measured data is well consistent with the calculated results using a diffusive mode and a ballistic model.

Abstract: The present invention provides for a current induced switching magnetoresistance device comprising a magnetic multilayer composed of a first ferromagnetic layer, a nonferromagnetic layer, and a second ferromagnetic layer, wherein the first ferromagnetic layer has an upper electrode, the second ferromagnetic layer pinned by an antiferromagnet, wherein the antiferromagnet contains a lower electrode at its lower part, and the second ferromagnetic layer is embedded with a nano oxide layer. It is preferable to have at least a part of the lower electrode in contact with the second ferromagnetic layer. The magnetoresistance device of the present invention provides a lower critical current (Ic) for the magnetization reversal and has an increased resistance.

Abstract: In a method for fabricating a Bi thin film having a great MR (magnetoresistance) at room temperature and a method for fabricating a spintronics device using the same, the Bi thin film is fabricated by an electrodepostiting method and a sputtering method and has very great MR characteristics at room temperature, and it can be applied to various spintronics devices.

Abstract: A fabrication method of a magnetic tunnel junction includes the steps of: forming a magnetic tunnel junction constructed having a first magnetic layer, a tunnel barrier formed at an upper surface of the first magnetic layer and a second magnetic layer formed at an upper surface of the tunnel barrier; and thermally treating the junction rapidly for 5 seconds˜10 minutes at a temperature of 200˜600° C. to re-distribute oxygens in the tunnel barrier and make the interface between the tunnel barrier and the magnetic layer to be even. The tunneling magnetoresistance and thermal stability of the magnetic tunnel junction can be improved through the rapid thermal annealing.

Abstract: An apparatus and method for fabricating a carbon thin film are disclosed in the present invention. The apparatus includes a vacuum chamber having a substrate mounted therein, a sputter target inside the vacuum chamber facing into the substrate, a cesium supplying unit inside the vacuum chamber in a shape of a shield to a circumference of the target and supplying cesium vapor onto a surface of the sputter target through a plurality of openings, and a heating wire surrounding the cesium supplying unit and maintaining the cesium supplying unit at a constant pressure.

Abstract: In a method for fabricating a Bi thin film having a great MR (magnetoresistance) at room temperature and a method for fabricating a spintronics device using the same, the Bi thin film is fabricated by an electrodepostiting method and a sputtering method and has very great MR characteristics at room temperature, and it can be applied to various spintronics devices.

Abstract: An apparatus and method for fabricating a carbon thin film are disclosed in the present invention. The apparatus includes a vacuum chamber having a substrate mounted therein, a sputter target inside the vacuum chamber facing into the substrate, a cesium supplying unit inside the vacuum chamber in a shape of a shield to a circumference of the target and supplying cesium vapor onto a surface of the sputter target through a plurality of openings, and a heating wire surrounding the cesium supplying unit and maintaining the cesium supplying unit at a constant pressure.

Abstract: A fabrication method of a magnetic tunnel junction includes the steps of: forming a magnetic tunnel junction constructed having a first magnetic layer, a tunnel barrier formed at an upper surface of the first magnetic layer and a second magnetic layer formed at an upper surface of the tunnel barrier; and thermally treating the junction rapidly for 5 seconds ˜10 minutes at a temperature of 200˜600° C. to re-distribute oxygens in the tunnel barrier and make the interface between the tunnel barrier and the magnetic layer to be even. The tunneling magnetoresistance and thermal stability of the magnetic tunnel junction can be improved through the rapid thermal annealing.

Abstract: The present invention relates to an underlayer for use in a high density magnetic recording media. More particularly, the invention relates to an underlayer for use in a high density magnetic recording media comprising A1Pd or CoTi intermetallic compound having B2 crystal structure, or Co50Ti50-xMxmetal alloy in which Ti in CoTi intermetallic compound is partly substituted by other substitutional elements while maintaining its B2 crystal structure, or CoTi/Cr of a double thin film structure in which a Cr seed layer is introduced. The underlayer provided by the present invention has a crystal structure and microstructure suitable for a high density magnetic recording media, which makes a good texture structure with a Co-based magnetic layer deposited thereon and shows fine grain size distribution, high coercity and high coercity squareness.

Abstract: A method of manufacturing a magnetic sensor element, and a security system using this element. The method involves preparing an amorphous magnetic alloy having an atomic composition ratio of ?Co.sub.x Fe.sub.1-x !.sub.1-n ?B.sub.y Si.sub.1-y !.sub.n where x=0.about.1, y=0.2.about.1, n=0.1.about.0.3, and heat treating the magnetic alloy in the atmosphere for more than one minute at 200.degree. C..about.460.degree. C. to produce the magnetic sensor element where the heat treatment is carried out under substantially zero external magnetic field. The manufacturing method results in a magnetic sensor element which produces a sensor signal having two major pulses and two minor pulses during one period of an externally applied alternating magnetic field, the two major pulses being easily detected by a security system.

Abstract: A responder for electronic article surveillance apparatus is made by subjecting a plurality of magnetizable elements to heating in the presence of a magnetic field and maintaining the field at a different intensity for each element as it is cooled to provide different magnetic characteristics so that when the responder is subjected to a cyclically varying magnetic interrogation field its several elements produce spaced apart pulses in each cycle.

Abstract: A novel sensor element having low magnetic coercivity and an asymmetric hysteresis characteristic is formed by heating a strip of cobalt alloy in an exidizing atmosphere to form an oxide coating thereon and then the strip is cooled in the presence of a magnetic field of about 0.3 oersteds along its length. The strip is detected by subjecting it to an alternating magnetic interrogation field and passing the resulting magnetic disturbances through signal processing circuits which select pulses produced only once in each interrogation field cycle. The element is deactivated by subjecting it to a magnetic field which eliminates its asymmetry.