Abstract: The present invention relates to a method of preparing a vinyl chloride polymer having good thermal stability by restraining a dehydrochlorination reaction due to heat or ultraviolet rays, and a vinyl chloride polymer prepared thereby. According to the preparation method, the adding point of a modifier is controlled, and a vinyl chloride polymer markedly restraining the generation of dehydrochloric acid due to heat or ultraviolet rays may be prepared. Therefore, the preparation method of the vinyl chloride polymer via the emulsion polymerization and the vinyl chloride polymer prepared thereby in the present invention may be readily applied to industries requiring the vinyl chloride polymer such as industries concerning a vinyl chloride resin and a molded article.

Abstract: A memory device, including a first memory region including a first substrate, a plurality of first semiconductor devices on the first substrate, and a first interlayer insulating layer covering the plurality of first semiconductor devices; and a second memory region including a second substrate on the first interlayer insulating layer and a plurality of second semiconductor devices on the second substrate, the second substrate including a first region in a plurality of grooves in the first interlayer insulating layer and a second region including grains extending from the first region, the second region being on an upper surface of the first interlayer insulating layer.

Abstract: The present invention relates to a method of preparing a vinyl chloride polymer having good thermal stability due to the restraint of dehydrochlorination by heat or ultraviolet rays, and a vinyl chloride polymer prepared thereby. In the preparation method, a modifier is introduced at the end of a polymerization process to impart the vinyl chloride polymer with high thermal stability without inducing modification. Therefore, the generation of dehydrochlorination due to heat or ultraviolet rays may be markedly restrained, thermal stability may be improved, and discoloration or the modification of physical properties may be prevented in the vinyl chloride polymer thus prepared.

Abstract: A vertical memory device includes a substrate, a channel on the substrate, extending in a vertical direction with respect to a top surface of the substrate, and including a protrusion at a lower portion of the channel, the protrusion extending in a parallel direction with respect to the top surface of the substrate, a semiconductor pattern connecting the protrusion and the substrate, and gate lines stacked and spaced apart from each other in the vertical direction, the gate lines on the protrusion and the semiconductor pattern and surrounding the channel.

Abstract: A preliminary tunnel insulation pattern and a preliminary charge storage pattern are formed on each active pattern extending in a direction, and a trench is defined between structures including the active pattern, the preliminary tunnel insulation pattern and the preliminary charge storage pattern. A preliminary isolation pattern partially fills the trench. A dielectric layer and a control gate electrode layer are formed on the preliminary charge storage pattern and the preliminary isolation pattern. The control gate electrode layer, the dielectric layer, the preliminary charge storage pattern and the preliminary tunnel insulation pattern are patterned to form gate structures including a tunnel insulation pattern, a charge storage pattern, a dielectric layer pattern and a control gate electrode. The preliminary isolation pattern is isotropically etched to form an isolation pattern and a first air gap. An insulating interlayer is formed between the gate structures to keep the first air gap.

Abstract: A nonvolatile memory device including a substrate which includes a cell array region and a connection region, an electrode structure formed on the cell array region and the connection region and including a plurality of laminated electrodes, a first recess formed in the electrode structure on the connection region and disposed between the cell array region and a second recess formed in the electrode structure on the connection region, and a plurality of vertical wirings formed on the plurality of electrodes exposed by the first recess.

Abstract: The present invention relates to a method of preparing a vinyl chloride polymer having good thermal stability due to the restraint of dehydrochlorination by heat or ultraviolet rays, and a vinyl chloride polymer prepared thereby. In the preparation method through bulk polymerization, a modifier is introduced to a polymerization process to impart the vinyl chloride polymer with high thermal stability without inducing modification. Therefore, the preparation method via the bulk polymerization of the vinyl chloride polymer and the vinyl chloride polymer prepared thereby according to the present invention may be readily applied to industries requiring thereof such as industries concerning a vinyl chloride resin and the molded article thereof.

Abstract: Disclosed are a water-dispersible halogen-capping polyalkylacrylate, a vinyl chloride-based block copolymer and a method for preparing the same. By using the water-dispersible halogen-capping polyalkylacrylate derivative as a chain transfer agent for polymerization of a vinyl chloride-based monomer, it is possible to obtain effects such as reduction of coagulation of particles and adhesion of particles to a reactor wall, improvement in reaction efficiency and polydispersity index, and prevention of yellowing.

Abstract: The present invention relates to a vinyl chloride polymer having good thermal stability due to the restraint of dehydrochlorination by heat or ultraviolet rays, and a method of preparing the same. The generation of the dehydrochlorination of the vinyl chloride polymer due to heat or ultraviolet rays may be markedly restrained, the thermal stability thereof may be improved, and the discoloration thereof or the modification of the physical properties thereof may be prevented. In addition, a modifier may be introduced to a polymerization process at the end of the polymerization, and high thermal stability may be attained without generating the transformation of the vinyl chloride polymer.

Abstract: A preliminary tunnel insulation pattern and a preliminary charge storage pattern are formed on each active pattern extending in a direction, and a trench is defined between structures including the active pattern, the preliminary tunnel insulation pattern and the preliminary charge storage pattern. A preliminary isolation pattern partially fills the trench. A dielectric layer and a control gate electrode layer are formed on the preliminary charge storage pattern and the preliminary isolation pattern. The control gate electrode layer, the dielectric layer, the preliminary charge storage pattern and the preliminary tunnel insulation pattern are patterned to form gate structures including a tunnel insulation pattern, a charge storage pattern, a dielectric layer pattern and a control gate electrode. The preliminary isolation pattern is isotropically etched to form an isolation pattern and a first air gap. An insulating interlayer is formed between the gate structures to keep the first air gap.

Abstract: The present invention relates to a method of preparing a vinyl chloride polymer, and more precisely, a method of preparing a vinyl chloride polymer having excellent processability by raising a final polymerization temperature up to 5˜20° C. from an first polymerization temperature.

Abstract: A liquid crystal display, including: a liquid crystal panel; and a visual inspection unit positioned in an outer region of the liquid crystal panel and transferring a test signal to the liquid crystal panel, in which the visual inspection unit includes: a test pad to which a test signal is applied; a first test line connected to the test pad; and a second test line connected to the test pad through a bridge line.

Abstract: Disclosed are a vinyl chloride based nanocomposite composition and a method of preparing the vinyl chloride based nanocomposite. According to the present invention, a method of preparing a straight vinyl chloride based nanocomposite having a nanomaterial uniformly dispersed therein, by using the vinyl chloride based nanocomposite composition when a vinyl chloride monomer is suspension polymerized in the presence of a protective colloidal agent and a polymerization initiator after preparing a water dispersion suspension using the vinyl chloride based nanocomposite composition based on a hydrophilic composition is provided.

Abstract: Disclosed are a chloroethylene-based nanocomposite composition and a method of preparing the same. More particularly, disclosed are a chloroethylene-based nanocomposite composition comprising a chloroethylene-based resin; a nanoclay comprising a coupling agent bonded thereto; and at least one polymer selected from unsaturated organic acid-based resins or polycarboxylic acid-based resins, and a method of preparing the same. According to the present disclosure, a uniformly dispersed water dispersion suspension may be provided by enhancing water dispersion effects of the nanoclay, and superior tensile strength may be exhibited by using the uniformly dispersed water dispersion suspension in chloroethylene-based suspension polymerization, and a chloroethylene nanocomposite having superior transparency may be provided.

Abstract: A chemical mechanical polishing machine includes a polishing head assembly including a polishing head body and a membrane disposed at a bottom of the polishing head body. The bottom surface of the membrane includes a hydrophobic area and a hydrophilic area.

Abstract: The present invention provides a method of preparing vinyl chloride polymer having excellent processability and high bulk density by the separate stepwise additions of vinyl chloride monomer during suspension polymerization.

Abstract: Provided are touch screen panels with improved transmittance and methods of fabricating the same. the method may include preparing a substrate including a cell region and an interconnection region provided around the cell region, sequentially forming a first buffer layer and a second buffer layer on the substrate, the second buffer layer having a refractive index less than that of the first buffer layer, and forming a transparent electrode on the second buffer layer. The second buffer layer is formed of a SiOC material.

Abstract: A chemical mechanical polishing machine includes a polishing head assembly including a polishing head body and a membrane disposed at a bottom of the polishing head body. The bottom surface of the membrane includes a hydrophobic area and a hydrophilic area.

Abstract: A system for removing a photoresist includes a solution storage configured to store a preliminary photoresist removal solution, a solution activation unit configured to convert the preliminary photoresist removal solution from the solution storage into an activated photoresist removal solution, and a photoresist removal unit configured to receive the activated photoresist removal solution from the solution activation unit, and configured to load a substrate including a photoresist pattern formed thereon.