Abstract: According to example embodiments of inventive concepts, a non-volatile memory device includes a substrate including a second impurity region crossing a first impurity region, and channel regions extending in a vertical direction on the substrate. Gate electrodes may be separated from each other in a vertical direction and a horizontal direction along outer walls of the channel regions. A first insulating interlayer may be on the gate electrodes and the channel regions, where the first insulating interlayer defines a contact hole between at least one adjacent pair gate electrodes and a contact plug is formed in the contact hole to be electrically connected to the second impurity region. An etch stop layer pattern may be on the contact plug and the first insulating interlayer.

Abstract: According to an example embodiment, a non-volatile memory device includes a semiconductor layer pattern on a substrate, a plurality of gate patterns and a plurality of interlayer insulating layer patterns that are alternately stacked along a side wall of the semiconductor layer pattern, and a storage structure between the plurality of gate patterns and the semiconductor layer pattern. The semiconductor layer pattern extends in a vertical direction from the substrate. The gate patterns are recessed in a direction from a side wall of the interlayer insulating layer patterns opposing the side wall of the semiconductor layer pattern. A recessed surface of the gate patterns may be formed to be vertical to a surface of the substrate.

Abstract: There is provided an alternating current (AC) detection circuit for power supply, the AC circuit including: a rectifying part rectifying an AC voltage; a voltage division part dividing the voltage rectified by the rectifying part according to a preset division ratio; a voltage stabilization circuit part stabilizing the voltage divided by the voltage division part; and a first square wave generating part comparing the voltage stabilized by the voltage stabilization circuit part with an internal reference voltage, and generating a first square wave signal having a duty ratio according to comparison results between the stabilized voltage and the internal reference.

Abstract: Solar cells are provided. The solar cell may include a substrate, a first electrode, a light absorption layer, a second electrode. Additionally, an intrinsic layer and a buffer layer may further be disposed between the light absorption layer and the second electrode. Here, the first and second electrodes may consist of carbon nanotubes of which polarities may be controlled. Thus, a flexible solar cell of low costs and high efficiency may be realized.

Abstract: Methods for manufacturing a solar cell are provided. The method may include forming a lower electrode on a substrate, forming a light absorption layer on the lower electrode, forming a buffer layer on the light absorption layer, and forming a window layer on the buffer layer. The window layer may include an intrinsic layer and the transparent electrode which have electric characteristics different from each other, respectively. The intrinsic layer and the transparent electrode may be formed by a sputtering process using a single target formed of metal oxide doped with impurities.

Abstract: A first insulating interlayer is formed on a substrate including first and second regions. The first insulating interlayer has top surface, a height of which is greater in the first region than in the second region. A first planarization stop layer and a second insulating interlayer are formed. The second insulating interlayer is planarized until the first planarization stop layer is exposed. The first planarization stop layer and the first and second insulating interlayers in the second region are removed to expose the substrate. A lower mold structure including first insulation layer patterns, first sacrificial layer patterns and a second planarization stop layer pattern is formed. The first insulation layer patterns and the first sacrificial layer patterns are alternately and repeatedly formed on the substrate, and a second planarization stop layer pattern is formed on the first insulation layer pattern.

Abstract: A DFE circuit for use in a semiconductor memory device and an initializing method thereof. In the method of initializing a DFE circuit used in a semiconductor memory device having a discontinuous data transmission, the DFE circuit may be used for changing a sampling reference level in response to a level of previous data and sampling transmission data. The method includes terminating a data channel having a transmission of the transmission data at a predefined termination level, and controlling a sampling start time point of the transmission data as a time point preceding a transmission time point of the transmission data by a predefined time. Further, an initialization may be performed of the previous data on the basis of initialization data obtained through a pre-sampling of the data channel at a sampling start time point of the transmission data, thereby obtaining an initialization of the DFE circuit and compensating for a feedback delay.

Abstract: There is provided an alternating current (AC) detection circuit for a power supply, the circuit including: a rectifying part rectifying an AC voltage; a voltage division part dividing the voltage rectified by the rectifying part according to a preset division ratio; a voltage stabilization circuit part stabilizing the voltage divided by the voltage division part; a comparing part comparing the voltage stabilized by the voltage stabilization circuit part with an internal reference voltage and generating an input detection signal when the stabilized voltage is higher than the internal reference voltage; and an output part outputting an AC detection signal when the input detection signal is inputted from the comparing part.

Abstract: There is provided a driver for a plasma display panel having a separated board structure that can reduce parasitic resonance by shortening the length of a cable used for power transmission by separating a board having a Y electrode switch thereon from a board having an X electrode switch thereon.

Abstract: Provided are an optical cavity enhanced turbidimeter and a turbidity measure method. After casting a pulse beam or a beam having a steep intensity gradient into an optical cavity, the turbidity of the inside region of the optical cavity can be calculated using an attenuation rate of an output beam from the optical cavity.

Abstract: Disclosed are a semiconductor memory device, and a method of driving the same, and a cyclic redundancy check code generating circuit capable of performing cyclic redundancy check. A semiconductor memory device according to an aspect of the present invention includes a memory cell array, a data processing unit receiving data that is read from the memory cell array and selectively outputting at least some of the data according to ordering information, bit structure information, and burst length information, and a check code generating unit generating a cyclic redundancy check code to detect an error in the data being output, the check code generating unit generating and outputting the cyclic redundancy check code by using the read data, the ordering information, the bit structure information, and the burst length information.

Abstract: The present invention relates to an optically active (R)-aryloxypropionic acid amide compound which has high selectivity and safety for protecting a crop such as rice, wheat, barley and soy bean, and exhibits excellent herbicidal activity against weeds, and a herbicidal composition comprising the same.

Abstract: There are provided an apparatus for fixing a plastic sheet which fixes a plastic sheet to fabricate a nano pattern and a method of fabricating a nano pattern on a plastic sheet using the same. The apparatus for fixing a plastic sheet includes: a pair of planar metal guide rings interposingly fixing a plastic sheet from above and below, respectively; and a sheet fixing chuck including: a ring fixer sucking the pair of planar metal guide rings through a vacuum groove to be fixed thereto; and a sheet fixer having a plurality of vacuum pin holes formed therein, the vacuum pin holes sucking a bottom of the plastic sheet fixed by the planar metal guide rings. The apparatus allows fabrication of the nano pattern on the plastic sheet having less roughness than that of a semiconductor substrate or a glass substrate.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of preliminary gate structures, forming a capping layer pattern on sidewalls of the plurality of preliminary gate structures, and forming a blocking layer on top surfaces of the plurality of preliminary gate structures and the capping layer pattern such that a void is formed therebetween. The method also includes removing the blocking layer and an upper portion of the capping layer pattern such that at least the upper sidewalls of the plurality of preliminary gate structures are exposed, and a lower portion of the capping layer pattern remains on lower sidewalls of the preliminary gate structures. The method further includes forming a conductive layer on at least the upper sidewalls of the plurality of preliminary gate structures, reacting the conductive layer with the preliminary gate structures, and forming an insulation layer having an air gap therein.

Abstract: A semiconductor laser apparatus is provided which can vary an output wavelength of a light source. A semiconductor laser diode and one or more heat source devices arranged around the semiconductor laser diode are integrated on one substrate. The semiconductor laser diode is configured to be uniformly heated by the heat source device. An output wavelength of the semiconductor laser diode can be easily and quickly varied.

Abstract: There is provided a portable measuring system having a biophotonic sensor. The portable measuring system also includes a tunable light source, an output intensity detector and an output wavelength detector, which are mounted therein. The portable measuring system can precisely measure a variation in the reflectivity spectrum and/or the transmittance spectrum of the biophotonic sensor before and after an antigen-antibody reaction by varying the wavelength of the tunable light source. Thus, the concentration of the antigen is precisely measured.

Abstract: Provided is a measurement device. The measurement device includes a sensor, a wavelength-tunable light source, an additional light source, a coupler, and an optical power measurer. The sensor accepts a sample. The wavelength-tunable light source irradiates wavelength-tunable light to detect a reaction of the sensor. The additional light source irradiates wavelength-fixed light to detect an initial time of the reaction. The coupler combines the wavelength-tunable light source and the additional light source and irradiates the combined input light on the sensor. The optical power measurer detects the reaction of the sensor from an output light transmitted through or reflected by the sensor.

Abstract: Provided are a silicon nitride layer for a light emitting device, light emitting device using the same, and method of forming the silicon nitride layer for the light emitting device. The silicon nitride layer of the light emitting device includes a silicon nitride matrix and silicon nanocrystals formed in the silicon nitride matrix. A light emitting device manufactured by the silicon nitride layer has a good luminous efficiency and emits light in the visible region including the short-wavelength blue/violet region and the near infrared region.

Abstract: Provided is a method for manufacturing a sheet for a solar cell encapsulant which has stability against yellowing after a crosslinking process and thus good appearance with improved productivity in the sheet manufacture process, specifically to a method for manufacturing a sheet for a solar cell encapsulant characterized by melt-mixing a resin composition with an organic peroxide, a co-crosslinking agent and a silane coupling agent at the degradation temperature of the organic peroxide or less, wherein the resin composition is obtained by melt-mixing EVA resin with an antioxidant, an UV absorber and a light stabilizer at 80-220° C., and forming a sheet from the obtained melt-mixed resin composition.

Abstract: Methods of manufacturing semiconductor devices include forming an integrated structure and a first stopping layer pattern in a first region. A first insulating interlayer and a second stopping layer are formed. A second preliminary insulating interlayer is formed by partially etching the second stopping layer and the first insulating interlayer in the first region. A first polishing is performed to remove a protruding portion. A second polishing is performed to expose the first and second stopping layer patterns.