Abstract: A semiconductor light emitting device and a light emitting apparatus having the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate, a light emitting structure on the substrate, comprising a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a first electrode unit on sidewalls of the substrate and the first conductive type semiconductor layer.

Abstract: A semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate having a top surface that is curved to protrude, and a light emitting structure that is curved to protrude on the substrate and comprises an active layer.

Abstract: The present invention relates to a negative photoresist composition and a patterning method for device in which a photoresist pattern having a high sensitivity with a good reverse taper profile can be formed not only to realize an effective patterning of various thin films but also to facilitate removal of the photoresist pattern after the patterning. The photoresist composition comprises an alkali-soluble binder resin; a halogen-containing first photo-acid generator; a triazine-based second photo-acid generator; a cross-linking agent having an alkoxy structure; and a solvent.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a second conductive semiconductor layer on the second conductive super lattice layer.

Abstract: A semiconductor light emitting device including a first semiconductor layer including a first type dopant; a second semiconductor layer including the first type dopant on the first semiconductor layer; an active layer on the second semiconductor layer, the active layer including a multi-quantum well structure having a plurality of quantum barrier layers and a plurality of quantum well layers; a third semiconductor layer including a second type dopant on the active layer; and a fourth semiconductor layer including the second type dopant on the third semiconductor layer. The first semiconductor layer has a composition equation of AlY(GaxIn1-x)1-YN (X=1,0<Y<1) and the fourth semiconductor layer has a composition equation of AlY(GaxIn1-x)1-YN (X=1,0<Y<1).

Abstract: Polyimide or a precursor thereof represented by Chemical Formula 1 or 2 and a photosensitive organic insulator composition having the same are disclosed. The polyimide or the precursor thereof is prepared from diamine including polyalkyleneoxide. The use of the photosensitive organic insulator composition can allow for low temperature curing and shorten a curing time, form a low taper angle, and implement a high sensitivity and high residual film. Also, since the photosensitive organic insulator composition, as a positive photosensitive composition, has excellent solubility with respect to an alkali solution of an exposed portion, the generation of impurity can be minimized.

Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a first quantum dot layer on the active layer; and a second conductive semiconductor layer on the first quantum dot layer.

Abstract: Disclosed are a light emitting module and a light unit having the same. The light emitting module includes a plurality of light emitting devices, each light emitting device including a package body, a light emitting diode provided in the package body, and a plurality of lead electrodes electrically connected to the light emitting diode while protruding outwardly from the package body; and a board including at least one receiving groove, wherein the at least one of the light emitting devices is removably inserted into the at least one receiving groove.

Abstract: A light emitting device including a second metal layer, a second conduction type semiconductor layer on the second metal layer, an active layer on the second conduction type semiconductor layer, a first conduction type semiconductor layer on the active layer, a first metal layer on the first conduction type semiconductor layer, an insulating layer being disposed on a peripheral portion of an upper surface of the second metal layer and being disposed under a lower surface of the second conduction type semiconductor layer, and a passivation layer on lateral surfaces of the insulating layer, the second conduction type semiconductor layer, the active layer and the first conduction type semiconductor layer, the passivation layer being on an upper surface of the second metal layer, wherein a lateral surface of the insulating layer is adjacent to a lateral surface of the second metal layer.

Abstract: The present invention relates to a novel cyclic olefin compound, a polymer including the cyclic olefin compound, a liquid crystal alignment film including the polymer, and a liquid crystal display device including the liquid crystal alignment film. Since the polymer includes the cyclic olefin compound as a main chain, the thermal stability is excellent and the photoreactive speed is high. Accordingly, the production time can be reduced, the production cost can be reduced, and the anchoring force of the liquid crystal can be increased because the alignment property is stabilized due to the curing.

Abstract: A photosensitive resin composition is provided. The photosensitive resin composition comprises a) an alkali-soluble polyimide resin, b) an alkali-soluble novolak resin, c) a photosensitizer, and d) an organic solvent. The photosensitive resin composition is resistant to heat and can be used to form a pattern whose lateral angles are easily controllable. A large difference in developability between exposed and unexposed portions of the photosensitive resin composition is caused when patterning. The photosensitive resin composition is advantageous in terms of sensitivity, resolution, heat resistance and adhesiveness. Particularly, the lateral angles of the pattern can be easily controlled by varying the contents of the alkali-soluble resins. Therefore, the photosensitive resin composition is useful in the formation of an insulating film pattern of an organic light emitting diode (OLED).

Abstract: Disclosed are an acrylate resin included in a chemically amplified photoresist composition for forming a thick film, a chemically amplified photoresist composition including the same, and a photoresist pattern fabricated therefrom. The photoresist composition including the acrylate resin can achieve an improvement of sensitivity without damaging major characteristics such as compatibility (dispersion stability), spreading characteristics, developing characteristics, and resolution. In addition, a thick resist pattern can be formed with such a composition, and the pattern can have excellent sensitivity, developing characteristics, pattern characteristics, crack resistance, and plating resistance.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a second conductive semiconductor layer on the second conductive super lattice layer.

Abstract: Provided is a light emitting device. The light emitting device comprises a second electrode layer, a second conduction type semiconductor layer, an active layer, a first conduction type semiconductor layer, a first electrode layer, and an insulating layer. The second conduction type semiconductor layer is formed on the second electrode layer. The active layer is formed on the second conduction type semiconductor layer. The first conduction type semiconductor layer is formed on the active layer. The first electrode layer is formed on the first conduction type semiconductor layer. The insulating layer is disposed between the second electrode layer and the second conduction type semiconductor layer.

Abstract: The present invention relates to a positive photosensitive polyimide composition that includes polyimide, a polyamic acid, and a photoactive compound. An organic insulating layer for organic light-emitting devices (OLED), which includes the positive photosensitive polyimide composition, may control a taper angle and outgassing, and has excellent adhesion in respects to a substrate, water repellent control ability, and storage stability and the like.

Abstract: The present invention relates to polyimide or precursor thereof represented by Chemical Formula 1 or 2 and a photosensitive resin composition including the same. The polyimide or precursor thereof are fabricated using diamine comprising polyalkyleneoxide. The photosensitive resin composition of the present invention has excellent light transmissivity, an excellent resolution, and excellent photo sensitivity and image forming performance. Further, the photosensitive resin composition has high adhesiveness with substrates, such as a silicon film, a silicon oxide film, and a metal film. In particular, an excellent film without failure, such as crack, can be formed.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a second conductive semiconductor layer on the second conductive super lattice layer.

Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a first quantum dot layer on the active layer; and a second conductive semiconductor layer on the first quantum dot layer.

Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a first quantum dot layer on the active layer; and a second conductive semiconductor layer on the first quantum dot layer.