Abstract: An image sensor includes; a photoelectric conversion element disposed on a substrate, a fence structure disposed on the substrate and including a low refractive index layer stacked on a barrier layer, wherein the barrier layer includes at least one metal, and a color filter disposed inwardly lateral with respect to a sidewall of the fence structure, wherein the barrier layer includes an inward lateral protrusion.

Abstract: An image sensor including: a semiconductor substrate including a plurality of pixel regions; an anti-reflection layer on the semiconductor substrate; color filters provided on the anti-reflection layer and in the pixel regions; and a fence structure disposed between adjacent ones of the color filters, wherein the fence structure includes: a lower portion penetrating the anti-reflection layer; an upper portion on the anti-reflection layer; and an intermediate portion between the lower portion and the upper portion, wherein the fence structure has undercut regions, which are provided at both sides of the intermediate portion and are between the upper portion of the fence structure and a top surface of the anti-reflection layer.

Abstract: The inventive concepts provide a three-dimensional (3D) image sensor, based on structured light (SL), having a structure in which difficulty in a manufacturing process of a wiring layer is decreased and/or an area of a bottom pad of a capacitor is increased. The 3D image sensor includes: a pixel area including a photodiode in a semiconductor substrate and a gate group including a plurality of gates; a multiple wiring layer on an upper portion of the pixel area, the multiple wiring layer including at least two wiring layers; and a capacitor structure between a first wiring layer on a lowermost wiring layer of the multiple wiring layer and a second wiring layer on the first wiring layer, the capacitor structure including a bottom pad, a top pad, and a plurality of capacitors, wherein the bottom pad is connected to the first wiring layer.

Abstract: The inventive concepts provide a three-dimensional (3D) image sensor, based on structured light (SL), having a structure in which difficulty in a manufacturing process of a wiring layer is decreased and/or an area of a bottom pad of a capacitor is increased. The 3D image sensor includes: a pixel area including a photodiode in a semiconductor substrate and a gate group including a plurality of gates; a multiple wiring layer on an upper portion of the pixel area, the multiple wiring layer including at least two wiring layers; and a capacitor structure between a first wiring layer on a lowermost wiring layer of the multiple wiring layer and a second wiring layer on the first wiring layer, the capacitor structure including a bottom pad, a top pad, and a plurality of capacitors, wherein the bottom pad is connected to the first wiring layer.

Abstract: The inventive concepts provide a three-dimensional (3D) image sensor, based on structured light (SL), having a structure in which difficulty in a manufacturing process of a wiring layer is decreased and/or an area of a bottom pad of a capacitor is increased. The 3D image sensor includes: a pixel area including a photodiode in a semiconductor substrate and a gate group including a plurality of gates; a multiple wiring layer on an upper portion of the pixel area, the multiple wiring layer including at least two wiring layers; and a capacitor structure between a first wiring layer on a lowermost wiring layer of the multiple wiring layer and a second wiring layer on the first wiring layer, the capacitor structure including a bottom pad, a top pad, and a plurality of capacitors, wherein the bottom pad is connected to the first wiring layer.

Abstract: An image sensor includes; a photoelectric conversion element disposed on a substrate, a fence structure disposed on the substrate and including a low refractive index layer stacked on a barrier layer, wherein the barrier layer includes at least one metal, and a color filter disposed inwardly lateral with respect to a sidewall of the fence structure, wherein the barrier layer includes an inward lateral protrusion.

Abstract: The present invention relates to image sensors and method of manufacturing the same. The image sensor may include a substrate having pixel regions in which photoelectric-conversion devices and storage node regions spaced apart from each other; a lower contact via between the photoelectric conversion-devices in the pixel regions; a first insulating layer on the lower contact via and having an opening; an upper contact via electrically connected to the lower contact via through the first insulating layer and protruding from the first insulating layer; a second insulating layer surrounding the first insulating layer and the upper contact via, an upper surface of the second insulating layer in the opening defining a trench; a color filter filling the trench; a protective film exposing the upper contact via; a first transparent electrode on the protective film that contacts the upper contact via; and an organic photoelectric layer on the first transparent electrode.

Abstract: The inventive concepts provide a three-dimensional (3D) image sensor, based on structured light (SL), having a structure in which difficulty in a manufacturing process of a wiring layer is decreased and/or an area of a bottom pad of a capacitor is increased. The 3D image sensor includes: a pixel area including a photodiode in a semiconductor substrate and a gate group including a plurality of gates; a multiple wiring layer on an upper portion of the pixel area, the multiple wiring layer including at least two wiring layers; and a capacitor structure between a first wiring layer on a lowermost wiring layer of the multiple wiring layer and a second wiring layer on the first wiring layer, the capacitor structure including a bottom pad, a top pad, and a plurality of capacitors, wherein the bottom pad is connected to the first wiring layer.

Abstract: The present invention relates to image sensors and method of manufacturing the same. The image sensor may include a substrate having pixel regions in which photoelectric-conversion devices and storage node regions spaced apart from each other; a lower contact via between the photoelectric conversion-devices in the pixel regions; a first insulating layer on the lower contact via and having an opening; an upper contact via electrically connected to the lower contact via through the first insulating layer and protruding from the first insulating layer; a second insulating layer surrounding the first insulating layer and the upper contact via, an upper surface of the second insulating layer in the opening defining a trench; a color filter filling the trench; a protective film exposing the upper contact via; a first transparent electrode on the protective film that contacts the upper contact via; and an organic photoelectric layer on the first transparent electrode.

Abstract: An image sensor may include a substrate having a plurality of pixel regions in which photoelectric-conversion devices and storage node regions spaced apart from each other; a lower contact via between the photoelectric conversion-devices in the plurality of pixel regions; a first insulating layer on the lower contact via and having an opening; an upper contact via electrically connected to the lower contact via through the first insulating layer and protruding from the first insulating layer; a second insulating layer to surround the first insulating layer and the upper contact via, an upper surface of the second insulating layer in the opening defining a trench; and a color filter filling the trench. A protective film exposing the upper contact via, a first transparent electrode on the protective film and in contact with the upper contact via, and an organic photoelectric layer formed on the first transparent electrode may be provided.

Abstract: An image sensor may include a substrate having a plurality of pixel regions in which photoelectric-conversion devices and storage node regions spaced apart from each other; a lower contact via between the photoelectric conversion-devices in the plurality of pixel regions; a first insulating layer on the lower contact via and having an opening; an upper contact via electrically connected to the lower contact via through the first insulating layer and protruding from the first insulating layer; a second insulating layer to surround the first insulating layer and the upper contact via, an upper surface of the second insulating layer in the opening defining a trench; and a color filter filling the trench. A protective film exposing the upper contact via, a first transparent electrode on the protective film and in contact with the upper contact via, and an organic photoelectric layer formed on the first transparent electrode may be provided.

Abstract: A semiconductor device may include a first magnetic layer including a plurality of first regions configuring a plurality of memory cells and spaced apart from each other on a substrate, and a second region encompassing the plurality of first regions and electrically isolated from the first regions, a tunnel barrier layer disposed on the first magnetic layer, and a second magnetic layer disposed on the tunnel barrier layer.

Abstract: The inventive concepts provide magnetic memory devices. The device includes a first magnetic pattern provided in one united body on a substrate and having a plurality of through-holes, a plurality of second magnetic patterns spaced apart from each other on the first magnetic pattern, a tunnel barrier between the first magnetic pattern and the second magnetic patterns, top electrodes disposed on the second magnetic patterns, respectively, and a plurality of plugs electrically connecting the top electrodes to the substrate through the through-holes, respectively.

Abstract: Magnetic memory devices include a plurality of first magnetic patterns on a substrate so as to be spaced apart from each other, a first insulating pattern between the first magnetic patterns to define the first magnetic patterns, and a tunnel barrier layer covering the first magnetic patterns and the first insulating pattern. The first insulating pattern includes a first magnetic element, and the first magnetic element is the same as a second magnetic element constituting the first magnetic patterns.

Abstract: A semiconductor device may include a first magnetic layer including a plurality of first regions configuring a plurality of memory cells and spaced apart from each other on a substrate, and a second region encompassing the plurality of first regions and electrically isolated from the first regions, a tunnel barrier layer disposed on the first magnetic layer, and a second magnetic layer disposed on the tunnel barrier layer.

Abstract: The inventive concepts provide magnetic memory devices. The device includes a first magnetic pattern provided in one united body on a substrate and having a plurality of through-holes, a plurality of second magnetic patterns spaced apart from each other on the first magnetic pattern, a tunnel barrier between the first magnetic pattern and the second magnetic patterns, top electrodes disposed on the second magnetic patterns, respectively, and a plurality of plugs electrically connecting the top electrodes to the substrate through the through-holes, respectively.

Abstract: Magnetic memory devices include a plurality of first magnetic patterns on a substrate so as to be spaced apart from each other, a first insulating pattern between the first magnetic patterns to define the first magnetic patterns, and a tunnel barrier layer covering the first magnetic patterns and the first insulating pattern. The first insulating pattern includes a first magnetic element, and the first magnetic element is the same as a second magnetic element constituting the first magnetic patterns.

Abstract: Provided is a method of forming a contact structure. The method includes forming a conductive pattern on a substrate. An interlayer insulating layer covering the conductive pattern is formed. The interlayer insulating layer is patterned to form an opening partially exposing the conductive pattern. An oxide layer is formed on substantially the entire surface of the substrate on which the opening is formed. A reduction process is performed to reduce the oxide layer. Here, the oxide layer on a bottom region of the opening is reduced to a catalyst layer, and the oxide layer on a region other than the bottom region of the opening is reduced to a non-catalyst layer. A nano material is grown from the catalyst layer, so that a contact plug is formed in the opening.

Abstract: A device includes an insulating layer on a substrate having a lower conductive pattern, the insulating layer having a contact hole that penetrates the insulating layer and exposes a portion of the lower conductive pattern, a catalytic pattern having a first portion on the exposed portion of the lower conductive pattern and a second portion on a sidewall of the contact hole, a spacer on the sidewall of the contact hole, wherein the second portion of the catalytic pattern is disposed between the spacer and the sidewall, and a contact plug in the contact hole and contacting the catalytic pattern, the contact plug being a carbon nanotube material.

Abstract: A device includes an insulating layer on a substrate having a lower conductive pattern, the insulating layer having a contact hole that penetrates the insulating layer and exposes a portion of the lower conductive pattern, a catalytic pattern having a first portion on the exposed portion of the lower conductive pattern and a second portion on a sidewall of the contact hole, a spacer on the sidewall of the contact hole, wherein the second portion of the catalytic pattern is disposed between the spacer and the sidewall, and a contact plug in the contact hole and contacting the catalytic pattern, the contact plug being a carbon nanotube material.