Abstract: A method of tracing a position of a pipeline using a mapping probe includes: inserting and moving the mapping probe in a pipeline; receiving and keeping acceleration information and angular information in real time in a memory; estimating Euler angle (roll and pitch); estimating Euler angle (roll, pitch, and yaw); estimating a system modeling; estimating and applying covariance of system noise and covariance of measured noise; estimating three-dimensional position information modeling; receiving and keeping movement distance information of the mapping probe from an encoder in a memory; estimating and keeping in real time three-dimensional position information of the mapping probe in the memory; receiving the accumulated real-time three-dimensional position information of the mapping probe; mapping the accumulated real-time three-dimensional position information of the mapping probe to geographic information; and displaying the accumulated position information of the mapping probe mapped to the geographic info

Abstract: An electronic device is provided. The electronic device includes an image sensor configured to sense a motion of a bow to the string instrument, a vibration sensor configured to sense a vibration generated by the string instrument, and a control module configured to determine a fingering position of a user with respect to the string instrument using the motion of the bow and the vibration.

Abstract: The present invention relates to a hot press forming device for coated steel and a hot press forming method using the same, which can reduce the generation of fine cracks of a molding and can obtain uniform material properties.

Abstract: Provided are a novel derivative of 5-carbamoyl adamantan-2-yl amide of Formula (I), or a pharmaceutically acceptable salt thereof, and a pharmaceutical use thereof for inhibiting the activity of 11?-hydroxystreroid dehydrogenase type 1 (11b-HSD1) or for preventing and/or treating various diseases mediated by 11?-hydroxystreroid dehydrogenase type 1.

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.

Abstract: A semiconductor LED package includes a package body having first and second electrode structures and an LED chip connected to at least one of the first and second electrode structures using a wire. The LED chip includes a light emitting structure and first and second electrode parts. At least one of the first and second electrode parts includes a bonding electrode layer made of a material having the same composition as a material of the wire and bonded to the wire, and an uneven electrode layer disposed on the bonding electrode layer and having at least one through hole filled with the wire. The at least one through hole allows a top surface of the bonding electrode layer to be exposed therebelow.

Abstract: Provided are a novel derivative of 5-carbamoyl adamantan-2-yl amide or a pharmaceutically acceptable salt thereof, and a pharmaceutical use thereof for inhibiting the activity of 11?-hydroxystreroid dehydrogenase type 1 (11b-HSD1) or for preventing and/or treating various diseases mediated by 11?-hydroxystreroid dehydrogenase type 1.

Abstract: Provided according to embodiments of the present invention are an oxidation-promoting compositions, methods of forming oxide layers, and methods of fabricating semiconductor devices. In some embodiments of the invention, the oxidation-promoting composition includes an oxidation-promoting agent having a structure of A-M-L, wherein L is a functional group that is chemisorbed to a surface of silicon, silicon oxide, silicon nitride, or metal, A is a thermally decomposable oxidizing functional group, and M is a moiety that allows A and L to be covalently bonded to each other.

Abstract: An electronic device and a method for high speed visualization of an audio stream are provided. The method of operating the electronic device includes extracting only header information from at least one frame included in a specific audio file, extracting a global gain value, which is an average volume of respective frames, by using the extracted frame header information, filtering the extracted global gain value, and displaying the filtered value.

Abstract: Example embodiments disclose a semiconductor device using resistive memory material layers and a method of driving the semiconductor device. The semiconductor device includes a plurality of memory cells. At least one memory cell includes a uni-polar variable resistor and a bi-polar variable resistor connected in series and configured to switch between low resistance states and high resistance states, respectively, according to an applied voltage.

Abstract: A portable terminal for generating and reproducing stereoscopic data is provided. More particularly, an apparatus and method for providing stereoscopic audio by applying a sense of distance to audio data by the use of subject information of image data when generating the stereoscopic data are provided. An apparatus for generating stereoscopic data in the portable terminal includes an image processor for applying a stereoscopic effect to image data by acquiring the image data for generating the stereoscopic data via a plurality of cameras, and for recognizing subject motion information of the image data. An audio processor applies a stereoscopic effect to audio data in accordance with the subject motion information ascertained from video data after acquiring audio data for generating the stereoscopic data.

Abstract: Provided according to embodiments of the present invention are an oxidation-promoting compositions, methods of forming oxide layers, and methods of fabricating semiconductor devices. In some embodiments of the invention, the oxidation-promoting composition includes an oxidation-promoting agent having a structure of A-M-L, wherein L is a functional group that is chemisorbed to a surface of silicon, silicon oxide, silicon nitride, or metal, A is a thermally decomposable oxidizing functional group, and M is a moiety that allows A and L to be covalently bonded to each other.

Abstract: Example embodiments disclose a semiconductor device using resistive memory material layers and a method of driving the semiconductor device. The semiconductor device includes a plurality of memory cells. At least one memory cell includes a uni-polar variable resistor and a bi-polar variable resistor connected in series and configured to switch between low resistance states and high resistance states, respectively, according to an applied voltage.

Abstract: A semiconductor fuse box includes a fuse structure and a protective structure disposed between the fuse structure and an integrated circuit structure. The protective structure has at least one irregular side surface. The protective structure (which may also include a pad formed there-under) extends beyond a bottom of the fuse structure. Such an irregular side surface and such an extension of the protective structure minimize propagation of damaging energy to the adjacent integrated circuit structure when a laser beam is directed to the fuse structure.

Abstract: A semiconductor fuse box includes a fuse structure and a protective structure disposed between the fuse structure and an integrated circuit structure. The protective structure has at least one irregular side surface. The protective structure (which may also include a pad formed there-under) extends beyond a bottom of the fuse structure. Such an irregular side surface and such an extension of the protective structure minimize propagation of damaging energy to the adjacent integrated circuit structure when a laser beam is directed to the fuse structure.

Abstract: A field effect transistor includes a channel region under a gate stack formed on a semiconductor structure. The field effect transistor also includes a drain region formed with a first dopant doping a first side of the channel region, and includes a source region formed with the first dopant doping a second side of the channel region. The drain and source regions are doped asymmetrically such that a first charge carrier profile between the channel and drain regions has a steeper slope than a second charge carrier profile between the channel and source regions.

Abstract: A semiconductor fuse box includes a fuse structure and a protective structure disposed between the fuse structure and an integrated circuit structure. The protective structure has at least one irregular side surface. The protective structure (which may also include a pad formed there-under) extends beyond a bottom of the fuse structure. Such an irregular side surface and such an extension of the protective structure minimize propagation of damaging energy to the adjacent integrated circuit structure when a laser beam is directed to the fuse structure.

Abstract: A semiconductor fuse box includes a fuse structure and a protective structure disposed between the fuse structure and an integrated circuit structure. The protective structure has at least one irregular side surface. The protective structure (which may also include a pad formed there-under) extends beyond a bottom of the fuse structure. Such an irregular side surface and such an extension of the protective structure minimize propagation of damaging energy to the adjacent integrated circuit structure when a laser beam is directed to the fuse structure.

Abstract: A field effect transistor includes a channel region under a gate stack formed on a semiconductor structure. The field effect transistor also includes a drain region formed with a first dopant doping a first side of the channel region, and includes a source region formed with the first dopant doping a second side of the channel region. The drain and source regions are doped asymmetrically such that a first charge carrier profile between the channel and drain regions has a steeper slope than a second charge carrier profile between the channel and source regions.

Abstract: A semiconductor fuse box includes a fuse structure and a protective structure disposed between the fuse structure and an integrated circuit structure. The protective structure has at least one irregular side surface. The protective structure (which may also include a pad formed there-under) extends beyond a bottom of the fuse structure. Such an irregular side surface and such an extension of the protective structure minimize propagation of damaging energy to the adjacent integrated circuit structure when a laser beam is directed to the fuse structure.