Abstract: Disclosed are a method of uniformly dispersing nickel-plated conductive particles of a single layer within a polymer film by applying a magnetic field to the polymer film and a method of fabricating an anisotropic conductive film using the same. The method of fabricating a film may include forming a liquefied polymer layer by roll-to-roll coating a polymer solution in which a plurality of conductive particles has been mixed, dispersing the plurality of conductive particles included in the liquefied polymer layer by applying a magnetic field to the liquefied polymer layer, and fabricating a solid polymer layer limiting a movement of the plurality of dispersed conductive particles by drying the liquefied polymer layer in which the plurality of conductive particles has been dispersed.

Abstract: A non-conductive material layer, selected from a non-conductive film and a non-conductive polymer paste, and containing a dispersion of zinc (Zn) particles is disclosed, together with semiconductor packages including the non-conductive material layer. The non-conductive material layer contains zinc (Zn) particles having an average particle diameter of about 1 nm to about 200 nm in a non-conductive polymer base material of a film type, and a semiconductor package includes the non-conductive film. By using the non-conductive film and/or the non-conductive paste containing the zinc dispersion, e a semiconductor package having excellent electric connection properties and high reliability may be manufactured through simple processes at low manufacturing costs.

Abstract: A non-conductive material layer, selected from a non-conductive film and a non-conductive polymer paste, and containing a dispersion of zinc (Zn) particles is disclosed, together with semiconductor packages including the non-conductive material layer. The non-conductive material layer contains zinc (Zn) particles having an average particle diameter of about 1 nm to about 200 nm in a non-conductive polymer base material of a film type, and a semiconductor package includes the non-conductive film. By using the non-conductive film and/or the non-conductive paste containing the zinc dispersion, e a semiconductor package having excellent electric connection properties and high reliability may be manufactured through simple processes at low manufacturing costs.

Abstract: Provided is a functional fiber and a fiber aggregate for realizing various functions, an adhesive for easily bonding electronic components, and a method for manufacturing the same. Particularly, a fiber extended in a length direction includes a carrier polymer and a plurality of functional particles, wherein the plurality of functional particles are embedded in the carrier polymer and physically fixed to the carrier polymer to be integrated.

Abstract: Disclosed herein is a substrate bonding method including stacking a plurality of bonding objects including anisotropic conductive films (ACFs) and flexible printed circuit boards (FPCBs), which are sequentially stacked, on a substrate including bonding surfaces having a plurality of steps, according to the plurality of steps of the bonding surfaces of the substrate, and pressurizing the plurality of bonding objects to the substrate by a bonding tool of a bonding unit having pressurization surfaces having a shape corresponding to the bonding surfaces of the substrate to bond the plurality of bonding objects to each other.

Abstract: Provided is a functional fiber and a fiber aggregate for realizing various functions, an adhesive for easily bonding electronic components, and a method for manufacturing the same. Particularly, a fiber extended in a length direction includes a carrier polymer and a plurality of functional particles, wherein the plurality of functional particles are embedded in the carrier polymer and physically fixed to the carrier polymer to be integrated.

Abstract: Provided is a functional fiber and a fiber aggregate for realizing various functions, an adhesive for easily bonding electronic components, and a method for manufacturing the same. Particularly, a fiber extended in a length direction includes a carrier polymer and a plurality of functional particles, wherein the plurality of functional particles are embedded in the carrier polymer and physically fixed to the carrier polymer to be integrated.

Abstract: Provided is a functional fiber and a fiber aggregate for realizing various functions, an adhesive for easily bonding electronic components, and a method for manufacturing the same. Particularly, a fiber extended in a length direction includes a carrier polymer and a plurality of functional particles, wherein the plurality of functional particles are embedded in the carrier polymer and physically fixed to the carrier polymer to be integrated.

Abstract: The present invention is to provide an anisotropic conductive adhesive (ACA) for ultrasonic wave adhesion, which electrically connects a first electrode, which is an electrode of a connection portion of a first electronic component, with a second electrode, which is an electrode of a connection portion of a second electronic component. The anisotropic conductive adhesive includes an insulating polymer resin, conductive adhesive particles which are melted by heat generated from the ultrasonic waves applied to the anisotropic conductive adhesive, and spacer particles, which have a melting point higher than that of the adhesive particles, and wherein the adhesive particles are melted and made to come in surface contact with at least one electrode selected from the first electrode and the second electrode, and the first electrode and the second electrode are electrically connected with a constant gap maintained between the first electrode and the second electrode by the spacer particles.

Abstract: The fabrication method of an organic substrate having embedded active-chips such as semiconductor chips is disclosed. The present invention previously applies the conductive adhesives in a wafer state, makes them in a B-stage state, obtains individual semiconductor chips through dicing, and positions the individual semiconductor chips previously applied with the conductive adhesives in the cavities, making it possible to simultaneously obtain an electrical connection and a physical adhesion of the substrate and the semiconductor chips by means of a method of applying heat and pressure and stack the copper clad laminates on the upper portion of the substrate to which the semiconductor chips are connected. The present invention has advantages in processes such as a lead-free process, an environmental-friendly fluxless process, a low temperature process, ultra-fine pitch applications, etc., by mounting the active-chips through the flip chip interconnection using the non-solder bumps and the conductive adhesives.

Abstract: A method of manufacturing a wafer-level flip chip package is capable of being used to produce a flip chip package by directly coating a flip chip package using anisotropic conductive adhesives (ACA) and non conductive adhesives (NCA) in a solution state as a double layer on a wafer. The method can be used to manufacture a non-conductive mixed solution and a conductive mixed solution and directly coat them on a substrate, such that it is possible to: increase productivity; simplify a manufacturing process; suppress a shadow effect; easily perform thickness control that is difficult with the anisotropic conductive adhesive paste or the non-conductive adhesive paste; and obtain the non-conductive layer and the anisotropic conductive layer in an initial state of a B-stage with a level not losing latent of hardening through a simple drying process to volatilize an organic solvent.

Abstract: The present invention relates to an image sensor module and a manufacturing method thereof, especially to a wafer level chip size package (WL-CSP) realized by directly contacting an image sensor chip wafer to a glass wafer on which an IR filter coating layer is deposited, an electrode rearrangement and a dicing process, a miniaturized image sensor module using this wafer level chip size package (WL-CSP) and a method thereof. The CMOS image sensor module using a wafer level chip size package technology according to the present invention comprises: an image sensor chip wafer having a partition with a lattice structure formed at portions except an image sensing area; and a glass wafer with an IR filter coating layer and a metal electrode; and wherein the image sensor chip wafer and the glass wafer form an electric contact and a chip sealing by a flip-chip bonding; and wherein a solder bump and a non solder bump are formed after a metal wiring is rearranged on a lower surface of the glass wafer.

Abstract: A polymer/ceramic composite paste for an embedded capacitor includes an organic solvent, a ceramic powder having a particle diameter of not more than 20 ?m dispersed in the organic solvent, a polymer and a hardener. The use of the polymer/ceramic composite paste enables the formation of a dielectric layer having a high dielectric constant. The polymer/ceramic composite paste can be applied by a screen printing technique and is planarized to locally form a polymer/ceramic composite dielectric layer having a thickness of, e.g., up to 20 ?m on a desired region. Accordingly, electrical parasitics resulting from the formation of a capacitor on unwanted regions can be reduced, and the capacitance error can be reduced.

Abstract: The present invention provides a method for manufacturing a wafer-level package comprising the steps of coating adhesives on a wafer on which bumps are already formed and irradiating the adhesive layer using a laser to divide the wafer into individual chip units. According to the present invention, it is possible to effectively prevent adhesives from absorbing water during the dicing process when manufacturing a wafer-level package.

Abstract: Disclosed is a wafer level chip size package for an image sensor module and a manufacturing method thereof, more particularly to a small size image sensor module characterized by a structure where a glass formed with an I/R cut-off filter (layer) is assembled onto an image sensor chip by a polymer partition wall and a solder bump is formed on an electrode of the rear side of a chip connected by a through-hole formed on each I/O electrode of an image sensor chip and a wafer level chip size package process for realizing the module. The method for manufacturing a wafer level chip size package for an image sensor module, the method comprises: bonding an image sensor wafer glass and a glass wafer to form a through-hole on the image sensor wafer; filling the through-hole formed on the image sensor wafer with an exciting material; and forming a solder bump at the end of the exciting material to be connected with the circuit formed PCB substrate.

Abstract: The present invention relates to an image sensor module and a manufacturing method thereof, especially to a wafer level chip size package (WL-CSP) realized by directly contacting an image sensor chip wafer to a glass wafer on which an IR filter coating layer is deposited, an electrode rearrangement and a dicing process, a miniaturized image sensor module using this wafer level chip size package (WL-CSP) and a method thereof. The CMOS image sensor module using a wafer level chip size package technology according to the present invention comprises: an image sensor chip wafer having a partition with a lattice structure formed at portions except an image sensing area; and a glass wafer with an IR filter coating layer and a metal electrode; and wherein the image sensor chip wafer and the glass wafer form an electric contact and a chip sealing by a flip-chip bonding; and wherein a solder bump and a non solder bump are formed after a metal wiring is rearranged on a lower surface of the glass wafer.

Abstract: The method of the present invention comprises the steps of: providing an IC chip having I/O pads, each having a non-solder bump such as Au or Cu stud bump or Ni\Cu\Au bump formed thereon, and a substrate having metal electrodes formed thereon; applying a film-type non-conductive adhesive (NCA) to the chip or substrate, the adhesive including solid-phase bisphenol A type epoxy resin, liquid-phase bisphenol F type epoxy resin, solid-phase phenoxy resin, methylethylketone/toluene solvent, liquid-phase hardener, and non-conductive particles; and thermo-compressing the IC chip to the substrate so that the non-solder bump and the metal electrode can be mechanically and electrically connected. The NCA of the present invention has high reliability since it has lower thermal expansion coefficient and dielectric constant than conventional NCAs and has excellent mechanical and electrical characteristics.

Abstract: Disclosed is a triple layered ACA film adapted for enhancing the adhesion strength of a typical single layer Anisotropic Conductive Film or for enhancing the adhesion strength of the ACA film in flip chip bonding. The triple layered ACA film of the invention comprises: a main ACA film based upon epoxy resin and containing conductive particles having a particle size of 3 to 10 ?m and optionally non-conductive particles having a particle size of 0.1 to 1 ?m; and adhesion reinforcing layers based upon epoxy resin and formed at both sides of the main ACA film.

Abstract: The method of the present invention comprises the steps of: providing an IC chip having I/O pads, each having a non-solder bump such as Au or Cu stud bump or Ni\Cu\Au bump formed thereon, and a substrate having metal electrodes formed thereon; applying a film-type non-conductive adhesive (NCA) to the chip or substrate, the adhesive including solid-phase bisphenol A type epoxy resin, liquid-phase bisphenol F type epoxy resin, solid-phase phenoxy resin, methylethylketone/toluene solvent, liquid-phase hardener, and non-conductive particles; and thermo-compressing the IC chip to the substrate so that the non-solder bump and the metal electrode can be mechanically and electrically connected. The NCA of the present invention has high reliability since it has lower thermal expansion coefficient and dielectric constant than conventional NCAs and is excellent in mechanical and electrical characteristics.

Abstract: Disclosed is a method for manufacturing a low dielectric constant conductive adhesive that is appropriate for a radio frequency packaging application. This method is characterized by mixing a thermosetting resin with surface-treated conductive particles and non-conductive particles for prevention of agglutination and thereby forming the conductive adhesive. The manufactured conductive adhesive is useful for a bonding material of the radio frequency packaging. According to the present invention, it is possible to obtain a flip chip bonding having superior mechanical and electrical performance compared with the conventional flip chip bonding art. Also, since the adhesive has a low high frequency loss and a low dielectric constant, it is possible to realize a flip chip package having a superior electrical performance. The conductive adhesive is particularly useful for the flip chip packaging of a device having a bandwidth of microwave and millimeter wave.