Abstract: A quantum dot display panel of an electronic device includes a quantum dot light emitting diode which emits light in wavelength range, and a quantum dot sensor which is adjacent to the quantum dot light emitting diode and absorbs light in a visible light to infrared light wavelength range.

Abstract: A compound represented by Chemical Formula 1, an electro-optic material, an electro-optic modulator, and an optoelectronic integrated circuit are disclosed. In Chemical Formula 1, A, D, L1, L2, R1, R2, R3a, and R3b are the same as described in the detailed description.

Abstract: A sensor-embedded display panel includes a light emitting element and a sensor which include separate portions of a first common auxiliary layer including a hole transport material and a second common auxiliary layer including an electron transport material. The sensor includes first and second semiconductor layers proximate to the first and second common auxiliary layers, respectively, and including a p-type semiconductor and a non-fullerene n-type semiconductor having a LUMO energy level deeper than that of the electron transport material, respectively. An insertion layer between the second semiconductor layer and the second common auxiliary layer includes a metal, a metal compound, or any combination thereof. A work function of the metal or a LUMO energy level of the metal compound is deeper or shallower than the LUMO energy level of the non-fullerene n-type semiconductor and the LUMO energy level of the electron transport material within less than about 1.3 eV, respectively.

Abstract: Disclosed is a compound represented by Chemical Formula 1. In Chemical Formula 1, the definition of each group and variable is as described in the detailed description.

Abstract: A sensor includes an anode; a cathode; an organic photoelectric conversion layer between the anode and the cathode; and a first organic auxiliary layer between the anode and the organic photoelectric conversion layer, the organic photoelectric conversion layer includes a p-type semiconductor and an n-type semiconductor, and the first organic auxiliary layer includes a first singlet fission material represented by Chemical Formula 1 and satisfying Relation Formula 1: E ? ( S 1 ) + 0.5 eV ? 2 × E ? ( T 1 ) [ Relation ? Formula ? 1 ] wherein, Chemical Formula 1 and Relation Formula 1 are the same as described in the specification.

Abstract: A receiver of an optical communication system includes an organic photoelectric conversion device configured to convert optical signals received from a transmitter into an electrical signal; and a demodulator configured to input the electrical signal to a trained artificial neural network and demodulate the electrical signal based on an output of the trained artificial neural network.

Abstract: An image sensor includes first and second electrode layers, a photocharge generating layer between the first and second electrode layers and configured to generate a photocharge based on absorbing incident light, the photocharge generating layer configured to have a first highest occupied molecular orbital (HOMO) level, a hole transport layer between the first electrode layer and the photocharge generating layer and having a second HOMO level different from the first HOMO level by a difference value that is greater than or equal to a first threshold value, and an electron transport layer between the photocharge generating layer and the second electrode layer. The image sensor causes a pixel current based on the photocharge to flow between the second electrode layer and the first electrode layer, based on a first pixel voltage equal to or greater than a second threshold value being applied to the second electrode layer.

Abstract: A compound is represented by Chemical Formula 1. In Chemical Formula 1, G, R1, R2, R3, X1, Ar1 and Ar2 are each the same as in the specification.

Abstract: A sensor may include a reflective electrode, a photoelectric conversion layer on the reflective electrode and including one or more photoelectric conversion materials, a semi-transmissive electrode on the photoelectric conversion layer, a light transmitting buffer layer on the semi-transmissive electrode, and a semi-transmissive auxiliary layer on the light transmitting buffer layer.

Abstract: An organic compound is represented by Chemical Formula 1. In Chemical Formula 1, X1, X2, Ar1, n, R1, R2, A1, and A2 are each the same as in the specification.

Abstract: An organic compound is represented by Chemical Formula 1A or Chemical Formula 1B. In Chemical Formulas 1A and 1B, Ar1, Ar2, R1, R2, n, and m are each the same as in the detailed description.

Abstract: A receiver of an optical communication system includes an organic photoelectric conversion device configured to convert optical signals received from a transmitter into an electrical signal; and a demodulator configured to input the electrical signal to a trained artificial neural network and demodulate the electrical signal based on an output of the trained artificial neural network.

Abstract: A compound that may be applied to a sensor to improve electrical properties thereof is represented by Chemical Formula 1: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: Disclosed are a compound represented by Chemical Formula 1, a sensor including the compound, a sensor-embedded display panel, and an electronic device. In Chemical Formula 1, X1, A, and R1 to R5 are as described in the specification.

Abstract: A sensor-embedded display panel includes a light emitting element on a substrate and including a light emitting layer, and a photosensor including a photosensitive layer on the substrate and arranged in parallel with the light emitting layer along an in-plane direction of the substrate such that the photosensor and the light emitting layer at least partially overlap in the in-plane direction, wherein the light emitting element and the photosensor further include separate, respective portions of a first common auxiliary layer disposed under each of the light emitting layer and the photosensitive layer and connected to each other to be a single piece of material extending continuously between the light emitting element and the photosensor, and the photosensitive layer includes a first semiconductor represented by Chemical Formula 1 and a second semiconductor not including any fullerenes and forming a pn junction with the first semiconductor.

Abstract: A sensor embedded display panel includes a substrate, a light emitting element on the substrate and including an emission layer; and a photoelectric element on the substrate. The photoelectric element includes a light absorbing layer. The light absorbing layer at least partially overlaps the emission layer in a horizontal direction extending in parallel to an upper surface of the substrate. The light emitting element and the photoelectric element each include a separate portion of a first common auxiliary layer that extends on tops of the emission layer and the light absorbing layer and a separate portion of a second common auxiliary layer that extends on bottoms of the emission layer and the light absorbing layer. The photoelectric element further includes an auxiliary layer that has a thickness corresponding to one of a red wavelength spectrum, a green wavelength spectrum, or a blue wavelength spectrum.

Abstract: A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a light absorption sensor on the substrate and including a light absorbing layer arranged in parallel with the light emitting layer along an in-plane direction of the substrate. The light absorbing layer is configured to absorb light of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, or any combination thereof. The light emitting layer includes a first organic material and the light absorbing layer includes a second organic material. A difference between respective sublimation temperatures of the first and second organic materials is less than or equal to about 150° C., wherein each sublimation temperature is a temperature at which a weight reduction of 10% relative to the initial weight occurs during thermogravimetric analysis under an ambient pressure of about 10 Pa or less.

Abstract: A sensor includes an anode; a cathode; an organic photoelectric conversion layer between the anode and the cathode; and a first organic auxiliary layer between the cathode and the organic photoelectric conversion layer. The organic photoelectric conversion layer includes a p-type semiconductor and an n-type semiconductor. The organic photoelectric conversion layer includes a first singlet fission material. A LUMO energy level of the first singlet fission material is equal to or deeper than a LUMO energy level of the n-type semiconductor. The first singlet fission material is represented by Chemical Formula 1: in the Chemical Formula 1, the definitions of R1 to R10 and n are described in the specification.

Abstract: An imaging device includes a photoelectric conversion device including a sequential stack of an anode, a hole transport buffer layer, a photoelectric conversion layer, an electron transport buffer layer, and a cathode. The photoelectric conversion layer includes a p-type organic semiconductor and an n-type organic semiconductor. The electron transport buffer layer includes a compound represented by General Formula (1), and the p-type organic semiconductor includes a compound represented by General Formula (2): In General Formulas (1) and (2), Ar, R1 to R4, Ar3, R1 to R3, Ar1 and Ar2, and G1 and G2 are as defined in the specification.

Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and/or an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.