Patents by Inventor Kyung-Soo Ha
Kyung-Soo Ha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12183030Abstract: The present disclosure relates to a vehicle image processing device and a method therefor. A vehicle image processing apparatus may include a storage that stores optical property information of a first camera among a plurality of cameras for obtaining a vehicle periphery image, a processor that determines whether backlight is present in the vehicle periphery image and generates a display image based on whether the backlight is present, and a communication device controlled by the processor and communicating with a device in the vehicle. The processor may calculate location information of a light source for at least one of the first camera or the vehicle by using coordinates of a shadow object of the vehicle, which is recognized from the vehicle periphery image, and coordinates of the vehicle, and may determine whether the backlight is present, by comparing location information of the light source with the optical property information.Type: GrantFiled: September 8, 2022Date of Patent: December 31, 2024Assignees: HYUNDAI MOTOR COMPANY, KIA CORPORATIONInventors: Kyung Soo Ha, In Mook Kim
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Publication number: 20240420754Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.Type: ApplicationFiled: August 28, 2024Publication date: December 19, 2024Inventors: DAE-SIK MOON, GIL-HOON CHA, KI-SEOK OH, CHANG-KYO LEE, YEON-KYU CHOI, JUNG-HWAN CHOI, KYUNG-SOO HA, SEOK-HUN HYUN
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Patent number: 12148494Abstract: A semiconductor memory device includes a memory cell array, an error correction code (ECC) circuit, a fault address register, a scrubbing control circuit and a control logic circuit. The memory cell array includes memory cell rows. The scrubbing control circuit generates scrubbing addresses based on refresh operations performed on the memory cell array. The control logic circuit controls the ECC circuit such that the ECC circuit performs an error detection operation on a plurality of sub-pages in a first memory cell row to count a number of error occurrences, and determines whether to correct a codeword in which an error is detected based on the number of error occurrences. An uncorrected or corrected codeword is written back, and a row address of the first memory cell row may be stored in the fault address register as a row fault address based on the number of error occurrences.Type: GrantFiled: February 28, 2023Date of Patent: November 19, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Kiheung Kim, Sanguhn Cha, Junhyung Kim, Sungchul Park, Hyojin Jung, Kyung-Soo Ha
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Patent number: 12106794Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.Type: GrantFiled: June 7, 2023Date of Patent: October 1, 2024Assignee: SAMSUNG ELECTRONICS CO., LTDInventors: Dae-Sik Moon, Gil-Hoon Cha, Ki-Seok Oh, Chang-Kyo Lee, Yeon-Kyu Choi, Jung-Hwan Choi, Kyung-Soo Ha, Seok-Hun Hyun
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Publication number: 20240300502Abstract: An embodiment method for performing a fail-safe function using an apparatus for performing the fail-safe function includes determining whether there is a replacement component to perform a function of a failed component in response to failure of one or more components installed in a vehicle, determining an operation mode of a remote smart parking assist (RSPA) controller based on a result of determining whether there is the replacement component, and operating the RSPA controller or a cooperative controller based on the operation mode.Type: ApplicationFiled: January 22, 2024Publication date: September 12, 2024Inventors: Ki Ho Lee, Su Min Choi, In Mook Kim, Kyung Soo Ha, Sun Woo Kang
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Patent number: 12033686Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.Type: GrantFiled: May 9, 2023Date of Patent: July 9, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae-Sik Moon, Gil-Hoon Cha, Ki-Seok Oh, Chang-Kyo Lee, Yeon-Kyu Choi, Jung-Hwan Choi, Kyung-Soo Ha, Seok-Hun Hyun
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Patent number: 12020767Abstract: A method of operating memory devices disposed in different ranks of a multi-rank memory device and sharing a signal line includes receiving, in all of the memory devices included in the multi-rank memory device, on-die termination (ODT) state information of the signal line. The method further includes storing, in each of the memory devices of the multi-rank memory device, the ODT state information of the signal line in a mode register. The method further includes generating, in each of the memory devices of the multi-rank memory device, a control signal based on the ODT state information of the signal line stored in the mode register. The method further includes changing, in each of the memory devices of the multi-rank memory device, an ODT setting of the signal line in response to the control signal.Type: GrantFiled: December 1, 2021Date of Patent: June 25, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae-Sik Moon, Kyung-Soo Ha, Young-Soo Sohn, Ki-Seok Oh, Chang-Kyo Lee, Jin-Hoon Jang, Yeon-Kyu Choi, Seok-Hun Hyun
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Patent number: 11921579Abstract: A method of operating a memory device is provided. The method includes: receiving a first command from a controller; activating a page of a memory cell array based on the first command; reading data of the activated page; detecting an error from the read data; correcting the detected error to generate error correction data; writing back the error correction data to the activated page in based on the detected error being a single-bit error; and blocking write-back of the error correction data to the activated page based on the detected error being a multi-bit error.Type: GrantFiled: March 11, 2022Date of Patent: March 5, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ki-Heung Kim, Jun Hyung Kim, Chang-Yong Lee, Sang Uhn Cha, Kyung-Soo Ha
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Publication number: 20230317138Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.Type: ApplicationFiled: June 7, 2023Publication date: October 5, 2023Inventors: DAE-SIK MOON, GIL-HOON CHA, KI-SEOK OH, CHANG-KYO LEE, YEON-KYU CHOI, JUNG-HWAN CHOI, KYUNG-SOO HA, SEOK-HUN HYUN
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Publication number: 20230317128Abstract: There are provided a memory device for supporting a command bus training (CBT) mode and a method of operating the same. The memory device is configured to enter a CBT mode or exit from the CBT mode in response to a logic level of a first data signal, which is not included in second data signals, which are in one-to-one correspondence with command/address signals, which are used to output a CBT pattern in the CBT mode. The memory device is further configured to change a reference voltage value in accordance with a second reference voltage setting code received by terminals associated with the second data signals, to terminate the command/address signals or a pair of data clock signals to a resistance value corresponding to an on-die termination (ODT) code setting stored in a mode register, and to turn off ODT of data signals in the CBT mode.Type: ApplicationFiled: June 9, 2023Publication date: October 5, 2023Inventors: Young-hun Kim, Si-hong Kim, Tae-young Oh, Kyung-soo Ha
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Patent number: 11749337Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.Type: GrantFiled: June 16, 2022Date of Patent: September 5, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae-Sik Moon, Gil-Hoon Cha, Ki-Seok Oh, Chang-Kyo Lee, Yeon-Kyu Choi, Jung-Hwan Choi, Kyung-Soo Ha, Seok-Hun Hyun
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Patent number: 11749338Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.Type: GrantFiled: July 29, 2022Date of Patent: September 5, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dae-Sik Moon, Gil-Hoon Cha, Ki-Seok Oh, Chang-Kyo Lee, Yeon-Kyu Choi, Jung-Hwan Choi, Kyung-Soo Ha, Seok-Hun Hyun
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Publication number: 20230274776Abstract: A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.Type: ApplicationFiled: May 9, 2023Publication date: August 31, 2023Inventors: DAE-SIK MOON, GIL-HOON CHA, KI-SEOK OH, CHANG-KYO LEE, YEON-KYU CHOI, JUNG-HWAN CHOI, KYUNG-SOO HA, SEOK-HUN HYUN
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Patent number: 11715504Abstract: There are provided a memory device for supporting a command bus training (CBT) mode and a method of operating the same. The memory device is configured to enter a CBT mode or exit from the CBT mode in response to a logic level of a first data signal, which is not included in second data signals, which are in one-to-one correspondence with command/address signals, which are used to output a CBT pattern in the CBT mode. The memory device is further configured to change a reference voltage value in accordance with a second reference voltage setting code received by terminals associated with the second data signals, to terminate the command/address signals or a pair of data clock signals to a resistance value corresponding to an on-die termination (ODT) code setting stored in a mode register, and to turn off ODT of data signals in the CBT mode.Type: GrantFiled: November 4, 2021Date of Patent: August 1, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Young-hun Kim, Si-hong Kim, Tae-young Oh, Kyung-soo Ha
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Patent number: 11691619Abstract: An automatic parking system is provided. The automatic parking system includes a camera processor that acquires images around a subject vehicle, converts the acquired images into external images and synthesizes the external images. A sensor processor measured spaced distances between the subject vehicle and surrounding vehicles. A parking space recognizing unit periodically receives the spaced distances and the external images and comparing the consecutive external images with the spaced distances using an image recognition technology to recognize parking areas. A controller calculates a moving path between a current position of the subject vehicle and an optimal parking area and operates the subject vehicle based on the moving path.Type: GrantFiled: July 10, 2019Date of Patent: July 4, 2023Assignees: Hyundai Motor Company, Kia Motors CorporationInventors: Yoon Soo Kim, Joo Woong Yang, Dae Joong Yoon, Seung Wook Park, Jae Seob Choi, Kyung Soo Ha, Min Byeong Lee, Jin Ho Park, In Yong Jung
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Publication number: 20230207040Abstract: A semiconductor memory device includes a memory cell array, an error correction code (ECC) circuit, a fault address register, a scrubbing control circuit and a control logic circuit. The memory cell array includes memory cell rows. The scrubbing control circuit generates scrubbing addresses based on refresh operations performed on the memory cell array. The control logic circuit controls the ECC circuit such that the ECC circuit performs an error detection operation on a plurality of sub-pages in a first memory cell row to count a number of error occurrences, and determines whether to correct a codeword in which an error is detected based on the number of error occurrences. An uncorrected or corrected codeword is written back, and a row address of the first memory cell row may be stored in the fault address register as a row fault address based on the number of error occurrences.Type: ApplicationFiled: February 28, 2023Publication date: June 29, 2023Inventors: Kiheung Kim, Sanguhn Cha, Junhyung Kim, Sungchul Park, Hyojin Jung, Kyung-Soo Ha
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Publication number: 20230169678Abstract: The present disclosure relates to a vehicle image processing device and a method therefor. A vehicle image processing apparatus may include a storage that stores optical property information of a first camera among a plurality of cameras for obtaining a vehicle periphery image, a processor that determines whether backlight is present in the vehicle periphery image and generates a display image based on whether the backlight is present, and a communication device controlled by the processor and communicating with a device in the vehicle. The processor may calculate location information of a light source for at least one of the first camera or the vehicle by using coordinates of a shadow object of the vehicle, which is recognized from the vehicle periphery image, and coordinates of the vehicle, and may determine whether the backlight is present, by comparing location information of the light source with the optical property information.Type: ApplicationFiled: September 8, 2022Publication date: June 1, 2023Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATIONInventors: Kyung Soo Ha, In Mook Kim
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Patent number: 11626181Abstract: A semiconductor memory device includes a memory cell array, an error correction code (ECC) circuit, a fault address register, a scrubbing control circuit and a control logic circuit. The memory cell array includes memory cell rows. The scrubbing control circuit generates scrubbing addresses based on refresh operations performed on the memory cell array. The control logic circuit controls the ECC circuit such that the ECC circuit performs an error detection operation on a plurality of sub-pages in a first memory cell row to count a number of error occurrences, and determines whether to correct a codeword in which an error is detected based on the number of error occurrences. An uncorrected or corrected codeword is written back, and a row address of the first memory cell row may be stored in the fault address register as a row fault address based on the number of error occurrences.Type: GrantFiled: April 30, 2021Date of Patent: April 11, 2023Inventors: Kiheung Kim, Sanguhn Cha, Junhyung Kim, Sungchul Park, Hyojin Jung, Kyung-Soo Ha
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Publication number: 20230066632Abstract: A memory device includes a driver that drives a data line connected with an external device, an internal ZQ manager that generates an internal ZQ start signal, a selector that selects one of the internal ZQ start signal and a ZQ start command from the external device, based on a ZQ mode, a ZQ calibration engine that generates a ZQ code by performing ZQ calibration in response to a selection result of the selector, and a ZQ code register that loads the ZQ code onto the driver in response to a ZQ calibration command from the external device.Type: ApplicationFiled: October 18, 2022Publication date: March 2, 2023Inventors: Donghun Lee, Daesik Moon, Young-Soo Sohn, Young-Hoon Son, Ki-Seok Oh, Changkyo Lee, Hyun-Yoon Cho, Kyung-Soo Ha, Seokhun Hyun
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Publication number: 20230012525Abstract: A method of operating a memory device is provided. The method includes: receiving a first command from a controller; activating a page of a memory cell array based on the first command; reading data of the activated page; detecting an error from the read data; correcting the detected error to generate error correction data; writing back the error correction data to the activated page in based on the detected error being a single-bit error; and blocking write-back of the error correction data to the activated page based on the detected error being a multi-bit error.Type: ApplicationFiled: March 11, 2022Publication date: January 19, 2023Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ki-Heung KIM, Jun Hyung KIM, Chang-Yong LEE, Sang Uhn CHA, Kyung-Soo HA