Patents by Inventor Kyusik Sin

Kyusik Sin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6661625
    Abstract: A thin film read/write head with a high performance read section that includes a spin-dependent tunneling sensor composed of a new low resistance metal oxide tunneling barrier material, such as chromium oxide (CrxOy) or niobium oxide (NbOz). The chromium oxide material (CrxOy) can be, for example: Cr3O4, Cr2O3, CrO2, CrO3, Cr5O12, Cr6O15, other stoichiometry, or any combination thereof. The niobium oxide (NbOz) can be, for example: NbO, NbO2, Nb2O5, Nb2O3, Nb12O29, Nb11O27, other stoichiometry, or any combination thereof. The chromium oxide and the niobium oxide material provides a very low sensor resistance with an acceptable magnetoresistance ratio, which will enable the fabrication of high density read sensors, and thus read heads with high data transfer rate.
    Type: Grant
    Filed: February 20, 2001
    Date of Patent: December 9, 2003
    Inventors: Kyusik Sin, Ming Mao, Hua-Ching Tong, Chester Xiaowen Chien
  • Patent number: 6650503
    Abstract: An inductive write element for use with a magnetic data recording and retrieval system is provided. The write element includes a magnetic yoke having an electrically conductive coil passing there through. The yoke is constructed of first and second magnetic poles, and performance of the write element is improved by the inclusion of a very thin pedestal of a high magnetic moment material on the first pole in the pole tip region. Further performance gains are realized by providing a tapered edge on the pedestal to facilitate magnetic flux flow through the pedestal.
    Type: Grant
    Filed: June 13, 2002
    Date of Patent: November 18, 2003
    Assignee: Read-Rite Corporation
    Inventors: Yingjian Chen, Ron Barr, Hua-Ching Tong, Stone Shi, Kyusik Sin
  • Patent number: 6639291
    Abstract: A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic particles. The presence of such particles in the tunneling barrier has been found to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increased &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer and/or increasing a thickness of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells. Increasing the thickness of the tunnel barrier can afford improvements in manufacturing such as increased yield.
    Type: Grant
    Filed: February 6, 2002
    Date of Patent: October 28, 2003
    Assignee: Western Digital (Fremont), Inc.
    Inventors: Kyusik Sin, Shin Funada, Hugh Craig Hiner, Hua-Ching Tong, Xizeng Shi
  • Patent number: 6430806
    Abstract: An inductive write element for use with a magnetic data recording and retrieval system is provided. The write element includes a magnetic yoke having an electrically conductive coil passing there through. The yoke is constructed of first and second magnetic poles, and performance of the write element is improved by the inclusion of a very thin pedestal of a high magnetic moment material on the first pole in the pole tip region. Further performance gains are realized by providing a tapered edge on the pedestal to facilitate magnetic flux flow through the pedestal.
    Type: Grant
    Filed: June 23, 2000
    Date of Patent: August 13, 2002
    Assignee: Read-Rite Corporation
    Inventors: Yingjian Chen, Ron Barr, Hua-Ching Tong, Stone Shi, Kyusik Sin
  • Patent number: 6418048
    Abstract: A method and system for providing a top pinned spin-dependent tunneling sensor is disclosed. The method and system include providing a free layer, a tunneling barrier, a synthetic pinned layer and an antiferromagnetic layer. The free layer is ferromagnetic. The tunneling barrier is an insulator. The tunneling barrier is disposed between the free layer and the synthetic pinned layer. The synthetic pinned layer is ferromagnetic and includes a ferromagnetic top layer. The synthetic pinned layer is between the tunneling barrier and the antiferromagnetic layer. The ferromagnetic top layer acts as a seed layer for the antiferromagnetic layer.
    Type: Grant
    Filed: October 2, 2001
    Date of Patent: July 9, 2002
    Assignee: Read-Rite Corporation
    Inventors: Kyusik Sin, Shin Funada, Hugh C. Hiner, Xizeng Shi
  • Patent number: 6404601
    Abstract: A magnetic head has an exchange isolated poletip located between a shield of an MR sensor and a write pole of an inductive sensor. The poletip is preferably made of high Bs material, allowing the flux that travels through the much larger pole layer to funnel through the poletip without saturation. The poletip is isolated from the shield layer in order to decouple the shield layer from unfavorable domain patterns that may occur in the poletip, which in turn reduces noise in the sensor, while the shield layer serves to complete the inductive circuit. Despite having a poletip isolated by nonmagnetic material, heads built according to this invention have demonstrated high overwrite as well as remarkably low noise.
    Type: Grant
    Filed: January 25, 2000
    Date of Patent: June 11, 2002
    Assignee: Read-Rite Corporation
    Inventors: Robert E. Rottmayer, Jian-Gang Zhu, Kyusik Sin, Ronald A. Barr
  • Patent number: 6381095
    Abstract: A high performance magnetic write element incorporated in a read/write head having a lower pole including high Bsat back gap and write gap pedestals. The write element further including an upper pole connected with the lower pole to form a yoke and a coil disposed within the yoke and enclosed covered with a write gap material and surrounded by insulating material. The write gap material provides separation between the first and second poles at one end of the yoke to form a write gap therebetween. A method of forming the write element of the present invention includes forming the first pole and building thereupon a back gap pedestal and a write gap pedestal at back and front ends of the first pole respectively. A dielectric layer is deposited on top of the first pole and planarized to have an upper surface coplanar with the top of the first and second pedestals. Upon the dielectric layer the coil is formed on which is deposited the write gap material.
    Type: Grant
    Filed: August 31, 1999
    Date of Patent: April 30, 2002
    Assignee: Read-Rite Corporation
    Inventors: Kyusik Sin, Ronald Barr
  • Patent number: 6353318
    Abstract: The apparatus of the present invention is embodied in a magnetic field sensor having a magnetoresistive element, a magnetic bias layer for biasing the magnetoresistive element with a magnetic field, and an electrical insulator positioned between the magnetic bias layer and the magnetoresistive element. The insulator prevents the flow of electrical current between the magnetoresistive element and the magnetic bias layer and at least a portion of the insulator allows passage of the magnetic field from the magnetic bias layer to the magnetoresistive element such that the magnetoresistive element is biased.
    Type: Grant
    Filed: March 10, 2000
    Date of Patent: March 5, 2002
    Assignee: Read-Rite Corporation
    Inventors: Kyusik Sin, Yingjian Chen, Ningja Zhu, Bill Crue