Patents by Inventor Lakmal C. Kalutarage

Lakmal C. Kalutarage has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11107674
    Abstract: Embodiments described and discussed herein provide methods for depositing silicon nitride materials by vapor deposition, such as by flowable chemical vapor deposition (FCVD), as well as for utilizing new silicon-nitrogen precursors for such deposition processes. The silicon nitride materials are deposited on substrates for gap fill applications, such as filling trenches formed in the substrate surfaces. In one or more embodiments, the method for depositing a silicon nitride film includes introducing one or more silicon-nitrogen precursors and one or more plasma-activated co-reactants into a processing chamber, producing a plasma within the processing chamber, and reacting the silicon-nitrogen precursor and the plasma-activated co-reactant in the plasma to produce a flowable silicon nitride material on a substrate within the processing chamber. The method also includes treating the flowable silicon nitride material to produce a solid silicon nitride material on the substrate.
    Type: Grant
    Filed: November 11, 2019
    Date of Patent: August 31, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Lakmal C. Kalutarage, Mark J. Saly, Praket Prakash Jha, Jingmei Liang
  • Publication number: 20210123136
    Abstract: The use of a cyclic 1,4-diene reducing agent with a metal precursor and a reactant to form metal-containing films are described. Methods of forming the metal-containing film comprises exposing a substrate surface to a metal precursor, a reducing agent and a reactant either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.
    Type: Application
    Filed: October 29, 2020
    Publication date: April 29, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Lakmal C. Kalutarage, Liqi Wu, Pratham Jain, Jeffrey W. Anthis, Mark Saly, Mei Chang, David Thompson
  • Publication number: 20210050212
    Abstract: Methods for deposition of high-hardness low-? dielectric films are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate, the precursor having the general formula (I) wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), alkyl, alkoxy, vinyl, silane, amine, or halide; maintaining the substrate at a pressure in a range of about 0.1 mTorr and about 10 Torr and at a temperature in a range of about 200° C. to about 500° C.; and generating a plasma at a substrate level to deposit a dielectric film on the substrate.
    Type: Application
    Filed: August 10, 2020
    Publication date: February 18, 2021
    Applicant: Applied Materials, Inc.
    Inventors: William J. Durand, Mark Saly, Lakmal C. Kalutarage, Kang Sub Yim, Shaunak Mukherjee
  • Publication number: 20200392624
    Abstract: Methods for depositing a yttrium-containing film through an atomic layer deposition process are described. Some embodiments of the disclosure utilize a plasma-enhanced atomic layer deposition process. Also described is an apparatus for performing the atomic layer deposition of the yttrium containing films.
    Type: Application
    Filed: August 24, 2020
    Publication date: December 17, 2020
    Inventors: Lakmal C. Kalutarage, Mark Saly, Thomas Knisley, Benjamin Schmiege, David Thompson
  • Patent number: 10760159
    Abstract: Methods for depositing a yttrium-containing film through an atomic layer deposition process are described. Some embodiments of the disclosure utilize a plasma-enhanced atomic layer deposition process. Also described is an apparatus for performing the atomic layer deposition of the yttrium containing films.
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: September 1, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Lakmal C. Kalutarage, Mark Saly, Thomas Knisley, Benjamin Schmiege, David Thompson
  • Publication number: 20200243323
    Abstract: Embodiments described and discussed herein provide methods for depositing silicon nitride materials by vapor deposition, such as by flowable chemical vapor deposition (FCVD), as well as for utilizing new silicon-nitrogen precursors for such deposition processes. The silicon nitride materials are deposited on substrates for gap fill applications, such as filling trenches formed in the substrate surfaces. In one or more embodiments, the method for depositing a silicon nitride film includes introducing one or more silicon-nitrogen precursors and one or more plasma-activated co-reactants into a processing chamber, producing a plasma within the processing chamber, and reacting the silicon-nitrogen precursor and the plasma-activated co-reactant in the plasma to produce a flowable silicon nitride material on a substrate within the processing chamber. The method also includes treating the flowable silicon nitride material to produce a solid silicon nitride material on the substrate.
    Type: Application
    Filed: November 11, 2019
    Publication date: July 30, 2020
    Inventors: Lakmal C. KALUTARAGE, Mark J. SALY, Praket Prakash JHA, Jingmei LIANG
  • Publication number: 20200234943
    Abstract: Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.
    Type: Application
    Filed: July 17, 2018
    Publication date: July 23, 2020
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Lakmal C. Kalutarage, Thomas Knisley
  • Publication number: 20200216949
    Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. The blocking layer is exposed to a polymer initiator to form a networked blocking layer. A layer is selectively formed on the second surface. The blocking layer inhibits deposition on the first surface. The networked layer may then optionally be removed.
    Type: Application
    Filed: September 19, 2018
    Publication date: July 9, 2020
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, David Thompson, Lakmal C. Kalutarage, Rana Howlader
  • Publication number: 20200095674
    Abstract: Methods for depositing film comprise depositing an aluminum-containing gap-fill film in a bottom-up manner in a feature of a substrate surface. The substrate can be sequentially exposed to an aluminum-containing precursor, a reactant, a fluorinating agent, and an etchant any number of times to promote bottom-up growth of the film in the feature.
    Type: Application
    Filed: September 20, 2019
    Publication date: March 26, 2020
    Inventors: Mark Saly, Lakmal C. Kalutarage, Jeffrey W. Anthis, Tatsuya E. Sato
  • Publication number: 20200071825
    Abstract: Methods of depositing a metal carbide film by exposing a substrate surface to a halide precursor and an aluminum reactant are described. The halide precursor comprises a compound of general formula (I) MXyRn, wherein M is a metal, X is a halogen selected from Cl, Br, F or I, y is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and n is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) Al(CH2AR1R2R3)3, wherein A is C, Si, or Ge, each of R1, R2, and R3 is independently alkyl or comprises substantially no ?-hydrogen.
    Type: Application
    Filed: August 26, 2019
    Publication date: March 5, 2020
    Inventors: Lakmal C. Kalutarage, Jeffrey W. Anthis, Mark Saly, David Thompson, Yongjing Lin, Shih Chung Chen
  • Publication number: 20200006056
    Abstract: Chromium containing precursors and methods of forming chromium-containing thin films are described. The chromium precursor has a chromium-diazadiene bond or cyclopentadienyl ligand and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic chromium film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising chromium with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described. Methods of filling gaps in a substrate with a chromium-containing film are also described.
    Type: Application
    Filed: June 28, 2019
    Publication date: January 2, 2020
    Inventors: Thomas Knisley, Mark Saly, Lakmal C. Kalutarage, David Thompson
  • Publication number: 20190309412
    Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and a modified alcohol with an electron withdrawing group positioned relative to a beta carbon so as to increase the acidity of a beta hydrogen attached to the beta carbon. These methods do not oxidize the underlying metal layer and are able to be performed at lower temperatures than processes performed with water or without modified alcohols.
    Type: Application
    Filed: April 5, 2019
    Publication date: October 10, 2019
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Cong Trinh, Mihaela Balseanu, Lakmal C. Kalutarage
  • Patent number: 10354861
    Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.
    Type: Grant
    Filed: November 6, 2017
    Date of Patent: July 16, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Mark Saly, David Thompson, Lakmal C. Kalutarage
  • Publication number: 20190017171
    Abstract: Methods for depositing a yttrium-containing film through an atomic layer deposition process are described. Some embodiments of the disclosure utilize a plasma-enhanced atomic layer deposition process. Also described is an apparatus for performing the atomic layer deposition of the yttrium containing films.
    Type: Application
    Filed: July 13, 2017
    Publication date: January 17, 2019
    Inventors: Lakmal C. Kalutarage, Mark Saly, Thomas Knisley, Benjamin Schmiege, David Thompson
  • Publication number: 20180061629
    Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.
    Type: Application
    Filed: November 6, 2017
    Publication date: March 1, 2018
    Inventors: Mark Saly, David Thompson, Lakmal C. Kalutarage
  • Publication number: 20180025907
    Abstract: Methods for seam-less gapfill comprising forming a flowable film by exposing a substrate surface to a silicon-containing precursor and a co-reactant are described. The silicon-containing precursor has at least one akenyl or alkynyl group. The flowable film can be cured by any suitable curing process to form a seam-less gapfill.
    Type: Application
    Filed: July 19, 2017
    Publication date: January 25, 2018
    Inventors: Lakmal C. Kalutarage, Mark Saly, David Thompson, Abhijit Basu Mallick, Tejasvi Ashok, Pramit Manna
  • Patent number: 9758866
    Abstract: A compound that is useful for forming a metal by reaction with a reducing agent is described by formula (I): wherein M is a metal selected from Groups 2 through 12 of the Periodic Table; and R1, R2, R3, and R4 are each independently H or C1-C8 alkyl.
    Type: Grant
    Filed: February 13, 2013
    Date of Patent: September 12, 2017
    Assignee: Wayne State University
    Inventors: Charles H. Winter, Lakmal C. Kalutarage
  • Patent number: 9714464
    Abstract: Atomic layer deposition (ALD) and chemical vapor deposition (CVD) precursors that are useful for forming metal-containing films are provided. These compounds include triazapentadienyl, ?-imino enolate compounds and ?-imino ketone compounds having formulae 1, 2, and 3, respectively. An ALD method using the precursors is also provided.
    Type: Grant
    Filed: June 11, 2013
    Date of Patent: July 25, 2017
    Assignee: Wayne State University
    Inventors: Charles H. Winter, Lakmal C. Kalutarage
  • Publication number: 20150159273
    Abstract: Atomic layer deposition (ALD) and chemical vapor deposition (CVD) precursors that are useful for forming metal-containing films are provided. These compounds include triazapentadienyl, ?-imino enolate compounds and ?-imino ketone compounds having formulae 1, 2, and 3, respectively. An ALD method using the precursors is also provided.
    Type: Application
    Filed: June 11, 2013
    Publication date: June 11, 2015
    Inventors: Charles H. Winter, Lakmal C. Kalutarage
  • Patent number: 8907115
    Abstract: A compound that is useful for forming a metal by reaction with a reducing agent is described by formula (I): wherein M is a metal selected from Groups 3 through 12 of the Periodic Table; R1 and R2 are each independently H or C1-C6 alkyl; and R3 is H or C1-C8 alkyl.
    Type: Grant
    Filed: December 10, 2012
    Date of Patent: December 9, 2014
    Assignee: Wayne State University
    Inventors: Charles H. Winter, Lakmal C. Kalutarage