Patents by Inventor Lakmal C. Kalutarage

Lakmal C. Kalutarage has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10354861
    Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.
    Type: Grant
    Filed: November 6, 2017
    Date of Patent: July 16, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Mark Saly, David Thompson, Lakmal C. Kalutarage
  • Publication number: 20190017171
    Abstract: Methods for depositing a yttrium-containing film through an atomic layer deposition process are described. Some embodiments of the disclosure utilize a plasma-enhanced atomic layer deposition process. Also described is an apparatus for performing the atomic layer deposition of the yttrium containing films.
    Type: Application
    Filed: July 13, 2017
    Publication date: January 17, 2019
    Inventors: Lakmal C. Kalutarage, Mark Saly, Thomas Knisley, Benjamin Schmiege, David Thompson
  • Publication number: 20180061629
    Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.
    Type: Application
    Filed: November 6, 2017
    Publication date: March 1, 2018
    Inventors: Mark Saly, David Thompson, Lakmal C. Kalutarage
  • Publication number: 20180025907
    Abstract: Methods for seam-less gapfill comprising forming a flowable film by exposing a substrate surface to a silicon-containing precursor and a co-reactant are described. The silicon-containing precursor has at least one akenyl or alkynyl group. The flowable film can be cured by any suitable curing process to form a seam-less gapfill.
    Type: Application
    Filed: July 19, 2017
    Publication date: January 25, 2018
    Inventors: Lakmal C. Kalutarage, Mark Saly, David Thompson, Abhijit Basu Mallick, Tejasvi Ashok, Pramit Manna
  • Patent number: 9758866
    Abstract: A compound that is useful for forming a metal by reaction with a reducing agent is described by formula (I): wherein M is a metal selected from Groups 2 through 12 of the Periodic Table; and R1, R2, R3, and R4 are each independently H or C1-C8 alkyl.
    Type: Grant
    Filed: February 13, 2013
    Date of Patent: September 12, 2017
    Assignee: Wayne State University
    Inventors: Charles H. Winter, Lakmal C. Kalutarage
  • Patent number: 9714464
    Abstract: Atomic layer deposition (ALD) and chemical vapor deposition (CVD) precursors that are useful for forming metal-containing films are provided. These compounds include triazapentadienyl, ?-imino enolate compounds and ?-imino ketone compounds having formulae 1, 2, and 3, respectively. An ALD method using the precursors is also provided.
    Type: Grant
    Filed: June 11, 2013
    Date of Patent: July 25, 2017
    Assignee: Wayne State University
    Inventors: Charles H. Winter, Lakmal C. Kalutarage
  • Publication number: 20150159273
    Abstract: Atomic layer deposition (ALD) and chemical vapor deposition (CVD) precursors that are useful for forming metal-containing films are provided. These compounds include triazapentadienyl, ?-imino enolate compounds and ?-imino ketone compounds having formulae 1, 2, and 3, respectively. An ALD method using the precursors is also provided.
    Type: Application
    Filed: June 11, 2013
    Publication date: June 11, 2015
    Inventors: Charles H. Winter, Lakmal C. Kalutarage
  • Patent number: 8907115
    Abstract: A compound that is useful for forming a metal by reaction with a reducing agent is described by formula (I): wherein M is a metal selected from Groups 3 through 12 of the Periodic Table; R1 and R2 are each independently H or C1-C6 alkyl; and R3 is H or C1-C8 alkyl.
    Type: Grant
    Filed: December 10, 2012
    Date of Patent: December 9, 2014
    Assignee: Wayne State University
    Inventors: Charles H. Winter, Lakmal C. Kalutarage
  • Publication number: 20140227444
    Abstract: A compound that is useful for forming a metal by reaction with a reducing agent is described by formula (I): wherein M is a metal selected from Groups 2 through 12 of the Periodic Table; and R1, R2, R3, and R4 are each independently H or C1-C8 alkyl.
    Type: Application
    Filed: February 13, 2013
    Publication date: August 14, 2014
    Applicant: Wayne State University
    Inventors: Charles H. Winter, Lakmal C. Kalutarage
  • Publication number: 20140161977
    Abstract: A compound that is useful for forming a metal by reaction with a reducing agent is described by formula (I): wherein M is a metal selected from Groups 3 through 12 of the Periodic Table; R1 and R2 are each independently H or C1-C6 alkyl; and R3 is H or C1-C8. alkyl.
    Type: Application
    Filed: December 10, 2012
    Publication date: June 12, 2014
    Applicant: WAYNE STATE UNIVERSITY
    Inventors: Charles H. Winter, Lakmal C. Kalutarage