Abstract: There is provided a process for separating olefins from saturated hydrocarbons in a feedstock containing saturated hydrocarbons, internal olefins, and alpha olefins characterized by steps of selectively forming of olefin-linear polyaromatic compound adducts and steps of dissociation of these adducts.

Abstract: This invention relates to a process for separating and isolating saturated hydrocarbons from olefins, and in particular, to a process for separating and isolating saturated hydrocarbons from olefins in a Fisher-Tropsch stream.

Abstract: This invention relates to a process for separating functionalized alpha olefins from functionalized internal olefins. The process achieves by a step of contacting a feedstock containing functionalized alpha olefins and functionalized internal olefins with a linear polyaromatic compound to form a linear polyaromatic compound-functionalized alpha olefin adduct and a step of dissociating the linear polyaromatic compound-functionalized alpha olefin adduct to form linear polyaromatic compounds and a functionalized alpha olefin composition.

Abstract: A silicon semiconductor integrated circuit includes an insulative field oxidation layer which substantially does not encroach under active circuit elements of the integrated circuit. The field oxidation layer is formed of oxidized amorphous silicon created by bombardment of a silicon substrate with noble gas ions. The amorphous silicon oxidizes at a rate much faster than crystalline silicon so that when the field oxidation layer is formed crystalline silicon foundations for the active circuit elements are left substantially intact. The crystalline silicon foundations are formed by using appropriate shield elements during the noble gas ion bombardment. This noble gas ion bombardment also has the advantage of eliminating dislocation defects which may be present in the field oxidation area so that these defects do not propagate into the crystal lattice of the silicon during subsequent heating and cooling cycles.

Abstract: A feedstock of linear internal olefins and branched internal olefins are converted to a primarily linear internal olefin composition having a lower concentration of branched internal olefins than present in the feedstock, by:a) contracting the feedstock with linear polyaromatic compound under conditions effective to form a reaction mixture comprising an linear polyaromatic compound-linear internal olefin adduct;b) separating the linear polyaromatic compound-linear internal olefin adduct from the reaction mixture;c) dissociating the linear polyaromatic compound-linear internal olefin adduct to form linear polyaromatic compound and a linear internal olefin composition, andd) separating the linear polyaromatic compound formed in step c) from a linear internal olefin composition.

Abstract: A process for separating linear alpha olefins from branched alpha olefins in a feed stream by:a) contacting the feed stream with a linear polyaromatic compound having at least four fused aromatic rings, such as 2,3-benzanthracene, under conditions effective to form a reaction mixture comprising a linear polyaromatic compound-linear alpha olefin adduct;b) separating the linear polyaromatic compound-linear alpha olefin adduct from the reaction mixture;c) dissociating the linear polyaromatic compound-linear alpha olefin adduct to form the linear polyaromatic compound and a linear alpha olefin composition, and optionallyd) separating the linear polyaromatic compound formed in step c) from the linear alpha olefin composition.

Abstract: Linear alpha olefins are separated from 2-branched alpha olefins and/or 3-branched alpha olefins. A feedstock of linear alpha olefins, branched alpha olefins, and internal olefins is converted to a linear alpha olefin composition having a lower concentration of branched alpha olefins than present in the feedstock bya) contacting the feedstock with anthracene under conditions effective to form a reaction mixture comprising an anthracene-linear alpha olefin adduct;b) separating the anthracene-linear alpha olefin adduct from the reaction mixture;c) disassociating the anthracene-linear alpha olefin adduct to form anthracene and a linear alpha olefin composition, andd) separating the anthracene formed in step c) from a linear alpha olefin composition.

Abstract: 1,3-propanediol is prepared in a process which involves hydroformylating ethylene oxide:(a) in an essentially non-water-miscible solvent in the presence of a non-ligated cobalt catalyst and a catalyst promoter at a temperature within the range of about 50.degree. to about 100.degree. C. and a pressure within the range of about 500 to about 5000 psig, to produce an intermediate product mixture comprising less than about 15 wt % 3-hydroxypropanal;(b) adding an aqueous liquid and extracting at a temperature less than about 100.degree. C. the 3-hydroxypropanal to provide an aqueous phase comprising 3-hydroxypropanal in greater concentration than the concentration of 3-hydroxypropanal in said intermediate product mixture, and an organic phase comprising the cobalt catalyst;(c) separating the aqueous phase from the organic phase;(d) hydrogenating the 3-hydroxypropanal to provide a hydrogenation product mixture comprising 1,3-propanediol; and(e) recovering 1,3-propanediol from said hydrogenation product mixture.

Abstract: A process and resulting product are described for controlling the channeling and/or diffusion of a boron dopant in a P- region forming the lightly doped drain (LDD) region of a PMOS device in a single crystal semiconductor substrate, such as a silicon substrate. The channeling and/or diffusion of the boron dopant is controlled by implanting the region, prior to implantation with a boron dopant, with noble gas ions, such as argon ions, at a dosage at least equal to the subsequent dosage of the implanted boron dopant, but not exceeding an amount equivalent to the implantation of about 3.times.10.sup.14 argon ions/cm.sup.2 into a silicon substrate, whereby channeling and diffusion of the subsequently implanted boron dopant is inhibited without, however, amorphizing the semiconductor substrate.

Abstract: A process and resulting product are described for controlling the channeling and/or diffusion of a boron dopant in a P- region forming the lightly doped drain (LDD) region of a PMOS device in a single crystal semiconductor substrate, such as a silicon substrate. The channeling and/or diffusion of the boron dopant is controlled by implanting the region, prior to implantation with a boron dopant,, with noble gas ions, such as argon ions, at a dosage at least equal to the subsequent dosage of the implanted boron dopant, but not exceeding an amount equivalent to the implantation of about 3.times.10.sup.13 argon ions/cm.sup.2 into a silicon substrate, whereby channeling and diffusion of the subsequently implanted boron dopant is inhibited without, however, amorphizing the semiconductor substrate.

Abstract: Dopant distribution and activation in polysilicon is controlled by implanting electrically neutral atomic species which accumulate along polysilicon grain boundaries. Exemplary atomic species include noble gases and Group IV elements other than silicon.