Abstract: Process for fabricating a thin single-crystalline layer n, including steps of: a) providing a support substrate n, b) placing a seed sample n, c) depositing a thin layer n so as to form an initial interface region n including a proportion of seed sample n and a proportion of thin layer n, the proportion of seed sample n decreasing from the first peripheral part n towards the second peripheral part n, e) providing an energy input to the initial interface region n contiguous to the first peripheral part n so as to liquefy a portion n of the thin layer and form a solid/liquid interface region n, and f) gradually moving the energy input away from the seed sample n so as to solidify the portion n so as to gradually move the solid/liquid interface region n.

Abstract: A method for assembling a first substrate and a second substrate via metal adhesion layers, the method including: depositing, on a surface of each of the first and second substrates, a metal layer with a thickness controlled to limit surface roughness of each of the deposited metal layers to below a roughness threshold; exposing the metal layers deposited on the surface of the first and second substrates to air; directly adhering the first and second substrates by placing the deposited metal adhesion layers in contact, the surface roughness of the contacted layers being that obtained at an end of the depositing. The adhesion can be carried out in the air, at atmospheric pressure and at room temperature, without applying pressure to the assembly of the first and second substrates resulting from directly contacting the deposited metal adhesion layers.

Abstract: A method for manufacturing a structure implementing temporary bonding a substrate to be handled with a handle substrate, including: providing the substrate to be handled covered with a first metal layer, the first layer having a first grain size; providing the handle substrate covered with a second metal layer, the second layer having same composition as the first metal layer and a second grain size different from the first grain size; assembling the substrate to be handled and the handle substrate by thermocompression assisted direct bonding on the first and second metal layers; possibly treating the substrate to be handled assembled to the handle substrate; disassembling the assembly of the substrate to be handled and the handle substrate to form the structure, including an embrittlement thermal annealing of the assembly resulting in the handle substrate being detached.

Abstract: A method for forming and passivating a tungsten layer, including: a) depositing, by PVD deposition, a tungsten layer on a substrate; and b) depositing by PVD deposition, a tungsten oxide passivation layer on the tungsten layer, by reactive sputtering in a plasma containing dioxygen, the tungsten oxide layer as deposited being amorphous and having a resistivity of between 5×10?2 and 5×10?3 O·cm, the substrate being kept in an inert atmosphere between a) and b).

Abstract: A method for producing a structure by direct bonding of two elements, the method including: production of the elements to be assembled and assembly of the elements. The production of the elements to be assembled includes: deposition on a substrate of a TiN layer by physical vapor deposition, and deposition of a copper layer on the TiN layer. The assembly of the elements includes: polishing the surfaces of the copper layers intended to come into contact so that they have a roughness of less than 1 nm RMS and hydrophilic properties, bringing the surfaces into contact, and storing the structure at atmospheric pressure and at ambient temperature.

Abstract: A method of transferring a thin layer from a first substrate to a second substrate with different coefficients of thermal expansion, including: providing at least one intermediate layer which temperature is increased by induction when an electromagnetic field is applied to it, more than a temperature increase in the first and second substrates; making contact between the first substrate and the second substrate, with the at least one intermediate layer interposed between them; fracturing the first substrate at a weakened zone making use of supply of thermal energy at the weakened zone made by applying an electromagnetic field to a heterostructure formed by making contact between the first substrate and the second substrate, the application generating local induction heating in the intermediate layer that induces a temperature gradient with a local value at the weakened zone activating the fracture mechanism.

Abstract: A method includes a) Providing a first substrate covered by a metal layer and a second substrate covered by a metal layer, b) Bringing into direct contact the metal layers so as to form a bonding interface having metal material bridges separated by cavities which are fluidly connected to each other, d) Immersing the bonding interface in an oxidizing fluid so as to form a metal oxide which fills at least in part the cavities and metal/metal oxide/metal contact areas. A structure is also provided having a first substrate, a first metal layer, a second metal layer forming a bonding layer with the first metal layer, and a second substrate, the bonding interface having: metal material bridges separated by cavities, a metal oxide partially filling the cavities, and metal/metal oxide/metal contact areas.

Abstract: A method for manufacturing a nanoscale object from a structure including a strained elastic layer on a foundation in a solid state present at a surface of a rigid substrate, the method reiterating: melting the foundation for a duration higher than or equal to 50 ns, thickness of the foundation being at least 20 nm and lower than a predetermined thickness corresponding to a theoretical peak-to-peak amplitude of wrinkles, the melting generating a simultaneous deformation of the elastic layer and of the foundation and a localized contact between the elastic layer and the rigid substrate insulating the regions from the foundation; solidifying the foundation to bring the foundation back to the solid state; until the foundation reaches yield point of the elastic layer.

Abstract: A method forming an elastic undulated layer locally lying on a substrate from a structure including a strained elastic layer on a foundation in a solid state present at a surface of a rigid substrate, the method including: melting a foundation for a duration of at least 50 ns, the foundation thickness being at least 20 nm and lower than a predetermined thickness corresponding to a theoretical peak-to-peak amplitude of wrinkles, the melting generating a simultaneous deformation, by forming wrinkles, of the elastic layer and the foundation and accompanied by localized adherent contact between the elastic layer and the rigid substrate in zones separating regions of the foundation; solidifying the foundation to bring it back to the solid state; removing the foundation brought back to the solid state to suspend a layer above the substrate outside the zones of localized adherent contact, the suspended layer being undulated in accordance with the wrinkles.

Abstract: A pressure-sensitive sensor including a substrate supporting a piezoelectric layer of a piezoelectric material. The piezoelectric layer includes surface undulations as wrinkles on which pressure is exerted upon use of the sensor. The piezoelectric layer is sandwiched between two electrodes for collecting charges generated by deformation of the piezoelectric layer.

Abstract: A method for manufacturing a structure implementing temporary bonding a substrate to be handled with a handle substrate, including: providing the substrate to be handled covered with a first metal layer, the first layer having a first grain size; providing the handle substrate covered with a second metal layer, the second layer having same composition as the first metal layer and a second grain size different from the first grain size; assembling the substrate to be handled and the handle substrate by thermocompression assisted direct bonding on the first and second metal layers; possibly treating the substrate to be handled assembled to the handle substrate; disassembling the assembly of the substrate to be handled and the handle substrate to form the structure, including an embrittlement thermal annealing of the assembly resulting in the handle substrate being detached.

Abstract: A method for manufacturing a heterostructure, including: contacting a first substrate having a first coefficient of thermal expansion and a second substrate having a different second coefficient of thermal expansion; annealing an assembly formed by contacting the first substrate and the second substrate; after annealing, returning the assembly to room temperature; providing, before the contacting, at least one intermediate layer at a surface of at least one of the first and second substrates, the at least one intermediate layer being made of a material which is ductile during the annealing and returning to room temperature; performing the contacting with the at least one intermediate layer sandwiched between the first and the second substrates; upon returning to room temperature, applying an outer pressure to the assembly to maintain it compressed.

Abstract: A method includes a) Providing a first substrate covered by a metal layer and a second substrate covered by a metal layer, b) Bringing into direct contact the metal layers so as to form a bonding interface having metal material bridges separated by cavities which are fluidly connected to each other, d) Immersing the bonding interface in an oxidizing fluid so as to form a metal oxide which fills at least in part the cavities and metal/metal oxide/metal contact areas. A structure is also provided having a first substrate, a first metal layer, a second metal layer forming a bonding layer with the first metal layer, and a second substrate, the bonding interface having: metal material bridges separated by cavities, a metal oxide partially filling the cavities, and metal/metal oxide/metal contact areas.

Abstract: A process for obtaining a bonding surface for direct bonding includes: a) providing a substrate based on a sintered metal having a base surface with an RMS roughness lower than 6 nanometres and a PV roughness lower than 100 nanometres; b) bombarding the base surface with ionic species; c) depositing a metal layer on the base surface; and d) carrying out a mechanical and/or chemical polish of an exposed surface of the metal layer. A structure including a substrate based on a sintered metal the base surface of which is at least partially formed from a metal including ionic species implanted by bombardment of the base surface, and a metal layer of identical chemical composition to that of the metal base substrate and including a bonding surface with an RMS roughness lower than 0.6 nanometres and a PV roughness lower than 10 nanometres is also provided.

Abstract: Process for fabricating a thin single-crystalline layer n, including steps of: a) providing a support substrate n, b) placing a seed sample n, c) depositing a thin layer n so as to form an initial interface region n including a proportion of seed sample n and a proportion of thin layer n, the proportion of seed sample n decreasing from the first peripheral part n towards the second peripheral part n, e) providing an energy input to the initial interface region n contiguous to the first peripheral part n so as to liquefy a portion n of the thin layer and form a solid/liquid interface region n, and f) gradually moving the energy input away from the seed sample n so as to solidify the portion n so as to gradually move the solid/liquid interface region n.