Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor structure, a dielectric layer, a metal-semiconductor compound film and a cover layer. The semiconductor structure has an upper surface and a lateral surface. The dielectric layer encloses the lateral surface of the semiconductor structure and exposes the upper surface of the semiconductor structure. The metal-semiconductor compound film is on the semiconductor structure, wherein the dielectric layer exposes a portion of a surface of the metal-semiconductor compound film. The cover layer encloses the portion of the surface of the metal-semiconductor compound film exposed by the dielectric layer, and exposes the dielectric layer.

Abstract: Hybrid bonding systems and methods for semiconductor wafers are disclosed. In one embodiment, a hybrid bonding system for semiconductor wafers includes a chamber and a plurality of sub-chambers disposed within the chamber. A robotics handler is disposed within the chamber that is adapted to move a plurality of semiconductor wafers within the chamber between the plurality of sub-chambers. The plurality of sub-chambers includes a first sub-chamber adapted to remove a protection layer from the plurality of semiconductor wafers, and a second sub-chamber adapted to activate top surfaces of the plurality of semiconductor wafers prior to hybrid bonding the plurality of semiconductor wafers together. The plurality of sub-chambers also includes a third sub-chamber adapted to align the plurality of semiconductor wafers and hybrid bond the plurality of semiconductor wafers together.

Abstract: Alignment systems, and wafer bonding alignment systems and methods are disclosed. In some embodiments, an alignment system for a wafer bonding system includes means for monitoring an alignment of a first wafer and a second wafer, and means for adjusting a position of the second wafer. The alignment system includes means for feeding back a relative position of the first wafer and the second wafer to the means for adjusting the position of the second wafer before and during a bonding process for the first wafer and the second wafer.

Abstract: An apparatus includes a bottom stage configured to hold a bottom surface of a substrate stack including at least two substrates, a top stage configured to hold a top surface of the substrate stack, and at least one blade configured to be inserted between two adjacent substrates of the substrate stack, wherein the at least one blade has a pointed tip in plan view and has a channel configured to inject air or fluid.

Abstract: An apparatus for cleaning a wafer includes a wafer station configured to hold the wafer, and a first and a second dispensing system. The first dispensing system includes a first swivel arm, and a first nozzle on the first swivel arm, wherein the first swivel arm is configured to move the first nozzle over and aside of the wafer. The first dispensing system includes first storage tank connected to the first nozzle, with the first nozzle configured to dispense a solution in the first storage tank. The second dispensing system includes a second swivel arm, and a second nozzle on the second swivel arm, wherein the second swivel arm is configured to move the second nozzle over and aside of the wafer. The second dispensing system includes a second storage tank connected to the second nozzle, with the second nozzle configured to dispense a solution in the second storage tank.

Abstract: A micro electromechanical system (MEMS) device includes a MEMS section attached to a substrate, and a cap bonded to a first surface of the substrate. The MEMS device further includes a carrier bonded to a second surface of the substrate opposite the first surface, wherein the carrier is free of active devices, and the cap and the carrier define a vacuum region surrounding the MEMS section. The MEMS device further includes a bond pad on a surface of the carrier opposite the MEMS section, wherein the bond pad is electrically connected to the MEMS section.

Abstract: In some embodiments, the present disclosure relates to a MEMs (microelectromechanical system) package device having a getter layer. The MEMs package includes a first substrate having a cavity located within an upper surface of the first substrate. The cavity has roughened interior surfaces. A getter layer is arranged onto the roughened interior surfaces of the cavity. A bonding layer is arranged on the upper surface of the first substrate on opposing sides of the cavity, and a second substrate bonded to the first substrate by the bonding layer. The second substrate is arranged over the cavity. The roughened interior surfaces of the cavity enables more effective absorption of residual gases, thereby increasing the efficiency of a gettering process.

Abstract: A method includes placing a first wafer onto a surface of a first wafer chuck, the first wafer chuck including multiple first profile control zones separated by one or more shared flexible membranes. The method also includes setting a first profile of the surface of the first wafer chuck. Setting a first profile of the surface of the first wafer chuck includes adjusting a first volume of a first profile control zone of the multiple first profile control zones. Setting a first profile of the surface of the first wafer chuck also includes adjusting a second volume of a second profile control zone of the multiple first profile control zones, the first volume of the first profile control zone being adjusted independently from the second volume of the second profile control zone, and the second adjustable volume encircling the first adjustable volume.

Abstract: Alignment systems, and wafer bonding alignment systems and methods are disclosed. In some embodiments, an alignment system for a wafer bonding system includes means for monitoring an alignment of a first wafer and a second wafer, and means for adjusting a position of the second wafer. The alignment system includes means for feeding back a relative position of the first wafer and the second wafer to the means for adjusting the position of the second wafer before and during a bonding process for the first wafer and the second wafer.

Abstract: The present disclosure provides a device having a doped active region disposed in a substrate. The doped active region having an elongate shape and extends in a first direction. The device also includes a plurality of first metal gates disposed over the active region such that the first metal gates each extend in a second direction different from the first direction. The plurality of first metal gates includes an outer-most first metal gate having a greater dimension measured in the second direction than the rest of the first metal gates. The device further includes a plurality of second metal gates disposed over the substrate but not over the doped active region. The second metal gates contain different materials than the first metal gates. The second metal gates each extend in the second direction and form a plurality of respective N/P boundaries with the first metal gates.

Abstract: An apparatus includes a bottom stage configured to hold a bottom surface of a substrate stack including at least two substrates, a top stage configured to hold a top surface of the substrate stack, and at least one blade configured to be inserted between two adjacent substrates of the substrate stack, wherein the at least one blade has a pointed tip in plan view and has a channel configured to inject air or fluid.

Abstract: A package component includes a surface dielectric layer including a planar top surface, a metal pad in the surface dielectric layer and including a second planar top surface level with the planar top surface, and an air trench on a side of the metal pad. The sidewall of the metal pad is exposed to the air trench.

Abstract: A system for and a method of bonding a first wafer to a second wafer are provided. A second wafer chuck has a second surface, a profile of the second surface being adjustable by a profile control layer. The first wafer is placed on a first surface of a first wafer chuck, and the second wafer is placed on the second surface of the second wafer chuck. The first wafer and the second wafer are warped prior to bonding to form a first warped wafer and a second warped wafer, respectively. The first warped wafer is bonded to the second warped wafer.

Abstract: Presented herein is a device comprising a common node disposed in a first wafer a test node disposed in a first wafer and having a plurality of test pads exposed at a first surface of the first wafer. The test node also has test node lines connected to the test pads and that are separated by a first spacing and extend to a second surface of the first wafer. A comb is disposed in a second wafer and has a plurality of comb lines having a second spacing different from the first spacing. Each of the comb lines has a first surface exposed at a first side of the second wafer. The comb lines provide an indication of an alignment of the first wafer and second wafer by a number or arrangement of connections made by the plurality of comb lines between the test node lines and the common node.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Abstract: A method includes forming a MEMS device, forming a bond layer adjacent the MEMS device, and forming a protection layer over the bond layer. The steps of forming the bond layer and the protection layer include in-situ deposition of the bond layer and the protection layer.

Abstract: A grinding wheel for wafer edge trimming includes a head having an open side and an abrasive end bonded around an edge of the open side of the head. The abrasive end is arranged to have multiple simultaneous contacts around a wafer edge during the wafer edge trimming.

Abstract: A semiconductor device and a method of fabricating the same are introduced. In an embodiment, one or more passivation layers are formed over a first substrate. Recesses are formed in the passivation layers and one or more conductive pads are formed in the recesses. One or more barrier layers are formed between the passivation layers and the conductive pads. The conductive pads of the first substrate are aligned to the conductive pads of a second substrate and are bonded using a direct bonding method.

Abstract: An apparatus for cleaning a wafer includes a wafer station configured to hold the wafer, and a first and a second dispensing system. The first dispensing system includes a first swivel arm, and a first nozzle on the first swivel arm, wherein the first swivel arm is configured to move the first nozzle over and aside of the wafer. The first dispensing system includes first storage tank connected to the first nozzle, with the first nozzle configured to dispense a solution in the first storage tank. The second dispensing system includes a second swivel arm, and a second nozzle on the second swivel arm, wherein the second swivel arm is configured to move the second nozzle over and aside of the wafer. The second dispensing system includes a second storage tank connected to the second nozzle, with the second nozzle configured to dispense a solution in the second storage tank.

Abstract: A method includes receiving a wafer stack having at least two wafers bonded together. At least one blade is inserted between a first wafer of the at least two wafers and a second wafer of the at least two wafers. The blade has a channel configured to inject air or fluid. The first wafer is debonded from the second wafer using the at least one blade. In another embodiment, a detacher having a convex bottom surface is attached to the wafer stack. The first wafer is debonded from the second wafer using the detacher.