Abstract: The present invention discloses methods and apparatus for depositing thin films of complex (compound) materials, including ferroelectrics, superconductors, and materials with high dielectric constants through a technique which is hereby entitled photo-enhanced chemical vapor deposition and activation (PECVDA). The technique involves the use of multiple heating sources including a resistive heat bias heater, a tuned optical source (UV or laser) and a source (halogen lamps or microwave sources) for applying high energy, rapid thermal pulses in a precise time sequence.

Abstract: Silicon nitride is pyrolytically deposited by the reaction of a halosilane with ammonia in an evacuated system. The process is particularly useful in providing uniform layers of silicon nitride on silicon wafers to be used in the fabrication of semiconductor devices.

Abstract: A method of surface treating aluminum, particularly aluminum metallization for semiconductors, which includes subjecting the aluminum surface to be treated with fuming nitric acid for one to ten minutes at room temperature. Following cleaning, the surface is subjected to boiling water for 5 to 15 minutes. The foregoing treatment appears to form a boehmite (AlO(OH)) layer on the surface of the aluminum, thereby substantially eliminating hillocking.