Patents by Inventor Lars Ivar Samuelson
Lars Ivar Samuelson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130146835Abstract: A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.Type: ApplicationFiled: December 31, 2007Publication date: June 13, 2013Inventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson
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Patent number: 8455857Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.Type: GrantFiled: September 8, 2011Date of Patent: June 4, 2013Assignee: QuNano ABInventors: Lars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
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Patent number: 8450717Abstract: A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.Type: GrantFiled: December 31, 2007Date of Patent: May 28, 2013Assignee: QuNano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson
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Patent number: 8357954Abstract: A method for forming a nanowhisker of, e.g., a III-V semiconductor material on a silicon substrate, comprises: preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, so that the substrate surface is essentially atomically flat. Catalytic particles on the substrate surface are deposited from an aerosol; the substrate is annealed; and gases for a MOVPE process are introduced into the atmosphere surrounding the substrate, so that nanowhiskers are grown by the VLS mechanism. In the grown nanowhisker, the crystal directions of the substrate are transferred to the epitaxial crystal planes at the base of the nanowhisker and adjacent the substrate surface.Type: GrantFiled: May 16, 2011Date of Patent: January 22, 2013Assignee: QuNano ABInventors: Lars Ivar Samuelson, Thomas M. I. Martensson
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Publication number: 20120270345Abstract: The present invention relates to light emitting diodes, LEDs. In particular the invention relates to a LED comprising a nanowire as an active component. The nanostructured LED according to the embodiments of the invention comprises a substrate and at an upstanding nanowire protruding from the substrate. A pn-junction giving an active region to produce light is present within the structure. The nanowire, or at least a part of the nanowire, forms a wave-guiding section directing at least a portion of the light produced in the active region in a direction given by the nanowire.Type: ApplicationFiled: April 27, 2012Publication date: October 25, 2012Applicant: QuNano ABInventors: Lars Ivar Samuelson, Bo Pedersen
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Patent number: 8242481Abstract: Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween.Type: GrantFiled: January 18, 2012Date of Patent: August 14, 2012Assignee: QuNano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson, Lars-Ake Ledebo
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Publication number: 20120126200Abstract: Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween.Type: ApplicationFiled: January 18, 2012Publication date: May 24, 2012Applicant: QuNano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson, Lars-Ake Ledebo
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Patent number: 8183587Abstract: The present invention relates to light emitting diodes, LEDs. In particular the invention relates to a LED comprising a nanowire as an active component. The nanostructured LED according to the embodiments of the invention comprises a substrate and at an upstanding nanowire protruding from the substrate. A pn-junction giving an active region to produce light is present within the structure. The nanowire, or at least a part of the nanowire, forms a wave-guiding section directing at least a portion of the light produced in the active region in a direction given by the nanowire.Type: GrantFiled: June 15, 2007Date of Patent: May 22, 2012Assignee: QuNano ABInventors: Lars Ivar Samuelson, Bo Pedersen, Bjorn Jonas Ohlsson
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Patent number: 8120009Abstract: Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode.Type: GrantFiled: February 23, 2011Date of Patent: February 21, 2012Assignee: QuNano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson, Lars-Ake Ledebo
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Publication number: 20110316019Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.Type: ApplicationFiled: September 8, 2011Publication date: December 29, 2011Inventors: Lars Ivar SAMUELSON, Patrik SVENSSON, Jonas OHLSSON, Truls LOWGREN
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Patent number: 8067299Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.Type: GrantFiled: May 13, 2010Date of Patent: November 29, 2011Assignee: QuNano ABInventors: Lars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
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Patent number: 8049203Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.Type: GrantFiled: June 15, 2007Date of Patent: November 1, 2011Assignee: QuNano ABInventors: Lars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
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Publication number: 20110215297Abstract: A method for forming a nanowhisker of, e.g., a III-V semiconductor material on a silicon substrate, comprises: preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, so that the substrate surface is essentially atomically flat. Catalytic particles on the substrate surface are deposited from an aerosol; the substrate is annealed; and gases for a MOVPE process are introduced into the atmosphere surrounding the substrate, so that nanowhiskers are grown by the VLS mechanism. In the grown nanowhisker, the crystal directions of the substrate are transferred to the epitaxial crystal planes at the base of the nanowhisker and adjacent the substrate surface.Type: ApplicationFiled: May 16, 2011Publication date: September 8, 2011Applicant: QuNano ABInventors: Lars Ivar Samuelson, Thomas M.I. Martensson
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Publication number: 20110193055Abstract: Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode.Type: ApplicationFiled: February 23, 2011Publication date: August 11, 2011Applicant: QuNano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson, Lars-Åke Ledebo
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Patent number: 7960260Abstract: A method for forming a nanowhisker of, e.g., a III-V semiconductor material on a silicon substrate, comprises: preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, so that the substrate surface is essentially atomically flat. Catalytic particles on the substrate surface are deposited from an aerosol; the substrate is annealed; and gases for a MOVPE process are introduced into the atmosphere surrounding the substrate, so that nanowhiskers are grown by the VLS mechanism. In the grown nanowhisker, the crystal directions of the substrate are transferred to the epitaxial crystal planes at the base of the nanowhisker and adjacent the substrate surface.Type: GrantFiled: April 14, 2009Date of Patent: June 14, 2011Assignee: QuNano ABInventors: Lars Ivar Samuelson, Thomas M. I. Martensson
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Patent number: 7910492Abstract: Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode.Type: GrantFiled: August 22, 2008Date of Patent: March 22, 2011Assignee: QuNano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson, Lars-Ake Ledebo
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Patent number: 7911035Abstract: Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.Type: GrantFiled: January 4, 2008Date of Patent: March 22, 2011Assignee: QuNano ABInventors: Werner Seifert, Lars Ivar Samuelson, Björn Jonas Ohlsson, Lars Magnus Borgström
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Patent number: 7875536Abstract: A method of forming a nanostructure having the form of a tree, comprises a first stage and a second stage. The first stage includes providing one or more catalytic particles on a substrate surface, and growing a first nanowhisker via each catalytic particle. The second stage includes providing, on the periphery of each first nanowhisker, one or more second catalytic particles, and growing, from each second catalytic particle, a second nanowhisker extending transversely from the periphery of the respective first nanowhisker. Further stages may be included to grow one or more further nanowhiskers extending from the nanowhisker(s) of the preceding stage. Heterostructures may be created within the nanowhiskers. Such nanostructures may form the components of a solar cell array or a light emitting flat panel, where the nanowhiskers are formed of a photosensitive material.Type: GrantFiled: February 12, 2010Date of Patent: January 25, 2011Assignee: QuNano ABInventors: Lars Ivar Samuelson, Knut Wilfried Deppert
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Publication number: 20100283064Abstract: The present invention relates to nanostructured light emitting diodes, LEDs. The nanostructured LED device according to the invention comprises an array of a plurality of individual nanostructured LEDs. Each of the nanostructured LEDs has an active region wherein light is produced. The nanostructured device further comprise a plurality of reflectors, each associated to one individual nanostructured LED (or a group of nanostructured LEDs. The individual reflectors has a concave surface facing the active region of the respective individual nanostructured LED or active regions of group of nanostructured LEDs.Type: ApplicationFiled: December 27, 2007Publication date: November 11, 2010Inventors: Lars Ivar Samuelson, Bo Pedersen, Bjorn Jonas Ohlsson, Yourii Martynov, Steven L. Konsek, Peter Jesper Hanberg
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Publication number: 20100221882Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.Type: ApplicationFiled: May 13, 2010Publication date: September 2, 2010Inventors: Lars Ivar Samuelson, Patrick Svensson, Jonas Ohlsson, Truls Lowgren