Abstract: A semiconductor device having a planar III-N semiconductor layer includes a substrate including a wafer and a buffer layer of a buffer material different from a material of the wafer, the buffer layer having a growth surface, an array of nanostructures epitaxially grown from the growth surface, a continuous planar layer formed by coalescence of upper parts of the nanostructures at an elevated temperature T, where the number of lattice cells spanning a center distance between adjacent nanostructures are different at the growth surface and at the coalesced planar layer, and a growth layer epitaxially grown on the planar layer.

Abstract: A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

Abstract: A semiconductor device having a planar III-N semiconductor layer includes a substrate including a wafer and a buffer layer of a buffer material different from a material of the wafer, the buffer layer having a growth surface, an array of nanostructures epitaxially grown from the growth surface, a continuous planar layer formed by coalescence of upper parts of the nanostructures at an elevated temperature T, where the number of lattice cells spanning a center distance between adjacent nanostructures are different at the growth surface and at the coalesced planar layer, and a growth layer epitaxially grown on the planar layer.

Abstract: A method for fabrication of an InGaN semiconductor template, comprising growing an InGaN pyramid having inclined facets on a semiconductor substrate; processing the pyramid by removing semiconductor material to form a truncated pyramid having a first upper surface; growing InGaN, over the first upper surface, to form an InGaN template layer having a c-plane crystal facet forming a top surface. The InGaN semiconductor template is suitable for further fabrication of semiconductor devices, such as microLEDs configured to emit red, green or blue light.

Abstract: A semiconductor device having a planar III-N semiconductor layer, comprising a substrate comprising a wafer (101) and a buffer layer (102), of a buffer material different from a material of the wafer, the buffer layer having a growth surface (1021); an array of nano structures (1010) epitaxially grown from the growth surface; a continuous planar layer (1020) formed by coalescence of upper parts of the nano structures at an elevated temperature T, wherein the number of lattice cells spanning a center distance between adjacent nano structures are different at the growth surface and at the coalesced planar layer; a growth layer (1030), epitaxially grown on the planar layer (1020).

Abstract: A method of making a semiconductor device, comprising: forming a plurality of semiconductor seeds of a first III-nitride material through a mask provided over a substrate; growing a second III-nitride semiconductor material; planarizing the grown second semiconductor material to form a plurality of discrete base elements having a substantially planar upper surface. Preferably the step of planarizing involves performing atomic distribution of III type atoms of the grown second semiconductor material under heating to form the planar upper surface, and without supply of III type atoms is carried out during the step of planarization.

Abstract: A method of making a semiconductor device, comprising: forming a plurality of semiconductor seeds of a first Ill-nitride material through a mask provided over a substrate; growing a second Ill-nitride semiconductor material on the seeds; planarizing the grown second semiconductor material to form a cohesive structure from the plurality of discrete base elements, said cohesive structure having a substantially planar upper surface.

Abstract: A method of making a semiconductor device, comprising: forming a plurality of semiconductor seeds of a first III-nitride material through a mask provided over a substrate; growing a second III-nitride semiconductor material; planarizing the grown second semiconductor material to form a plurality of discrete base elements having a substantially planar upper surface. Preferably the step of planarizing involves performing atomic distribution of III type atoms of the grown second semiconductor material under heating to form the planar upper surface, and without supply of III type atoms is carried out during the step of planarization.

Abstract: A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

Abstract: A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

Abstract: A semiconductor device having a planar III-N semiconductor layer, comprising a substrate comprising a wafer (101) and a buffer layer (102), of a buffer material different from a material of the wafer, the buffer layer having a growth surface (1021); an array of nano structures (1010) epitaxially grown from the growth surface; a continuous planar layer (1020) formed by coalescence of upper parts of the nano structures at an elevated temperature T, wherein the number of lattice cells spanning a center distance between adjacent nano structures are different at the growth surface and at the coalesced planar layer; a growth layer (1030), epitaxially grown on the planar layer (1020).

Abstract: A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input.

Abstract: A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second input fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.

Abstract: The solar cell structure according to the present invention comprises a nanowire (205) that constitutes the light absorbing part of the solar cell structure and a passivating shell (209) that encloses at least a portion of the nanowire (205). In a first aspect of the invention, the passivating shell (209) of comprises a light guiding shell (210), which preferably has a high- and indirect bandgap to provide light guiding properties. In a second aspect of the invention, the solar cell structure comprises a plurality of nanowires which are positioned with a maximum spacing between adjacent nanowires which is shorter than the wavelength of the light which the solar cell structure is intended to absorbing order to provide an effective medium for light absorption. Thanks to the invention it is possible to provide high efficiency solar cell structures.

Abstract: A radial nanowire Esaki diode device includes a semiconductor core of a first conductivity type and a semiconductor shell of a second conductivity type different from the first conductivity type. The device may be a TFET or a solar cell.

Abstract: The present invention provides a method and a system for forming wires (1) that enables a large scale process combined with a high structural complexity and material quality comparable to wires formed using substrate-based synthesis. The wires (1) are grown from catalytic seed particles (2) suspended in a gas within a reactor. Due to a modular approach wires (1) of different configuration can be formed in a continuous process. In-situ analysis to monitor and/or to sort particles and/or wires formed enables efficient process control.

Abstract: The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled orientation independently on what substrate they are arranged on. The method comprises the steps of providing nanowires and applying an electrical field over the population of nanowires, whereby an electrical dipole moment of the nanowires makes them align along the electrical field. Preferably the nanowires are dispersed in a fluid during the steps of providing and aligning. When aligned, the nanowires can be fixated, preferably be deposition on a substrate. The electrical field can be utilized in the deposition. Pn-junctions or any net charge introduced in the nanowires may assist in the aligning and deposition process. The method is suitable for continuous processing, e.g. in a roll-to-roll process, on practically any substrate materials and not limited to substrates suitable for particle assisted growth.

Abstract: A hybrid photovoltaic device (1) comprising a thin film solar cell (2) disposed in a first layer (21) comprising an array of vertically aligned nanowires (25), said nanowires having a junction with a first band gap corresponding to a first spectral range. The nanowires (25) form absorbing regions, and non-absorbing regions are formed between the nanowires. A bulk solar cell (3) s disposed in a second layer (31), positioned below the first layer (21), having a junction with a second band gap, which is smaller than said first band gap and corresponding to a second spectral range. The nanowires are provided in the first layer with a lateral density selected a such that a predetermined portion of an incident photonic wave-front will pass through the non-absorbing regions without absorption in the first spectral range, into the bulk solar cell for absorption in both the first spectral range and the second spectral range.

Abstract: A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

Abstract: The solar cell structure according to the present invention comprises a nanowire (205) that constitutes the light absorbing part of the solar cell structure and a passivating shell (209) that encloses at least a portion of the nanowire (205). In a first aspect of the invention, the passivating shell (209) of comprises a light guiding shell (210), which preferably has a high- and indirect bandgap to provide light guiding properties. In a second aspect of the invention, the solar cell structure comprises a plurality of nanowires which are positioned with a maximum spacing between adjacent nanowires which is shorter than the wavelength of the light which the solar cell structure is intended to absorbing order to provide an effective medium for light absorption. Thanks to the invention it is possible to provide high efficiency solar cell structures.