Abstract: The present invention relates to an ion implantation machine 100 that comprises: an enclosure 101 that is connected to a pump device 102; a plasma source 115-121-122; a bias power supply 113; a gas inlet 117 leading into the enclosure; and a substrate-carrier 104 connected to the negative pole of the bias power supply and arranged inside the enclosure. The machine is remarkable in that: the substrate-carrier 104 consists in at least two parallel plates 105-106; a reference electrode consists in at least one strip 110, this reference electrode being connected to the positive pole of the bias power supply; and the strip is interposed between the two plates.

Abstract: The invention relates to an ion implanter that comprises an enclosure ENV having arranged therein a substrate carrier PPS connected to a substrate power supply ALT via a high voltage electrical passage PET, the enclosure ENV being provided with pump means PP, PS, the enclosure ENV also having at least two cylindrical source bodies CS1, CS2 free from any obstacle and arranged facing the substrate carrier. This implanter is remarkable in that it includes at least one confinement coil BCI1-BCS1, BCI2-BCS2 per source body CS1, CS2.

Abstract: A wavelength spectroscopy device includes, on a substrate, a filter cell CF constituted by two mirrors separated by a spacer membrane, the filter cell being made up of a plurality of interference filters. Furthermore, the device also includes an emission cell CE having a plurality of emission sources, each of the sources being associated with one of the interference filters.

Abstract: The present invention relates to an ion implantation machine 100 that comprises: an enclosure 101 that is connected to a pump device 102; a plasma source 115-121-122; a bias power supply 113; a gas inlet 117 leading into the enclosure; and a substrate-carrier 104 connected to the negative pole of the bias power supply and arranged inside the enclosure. The machine is remarkable in that: the substrate-carrier 104 consists in at least two parallel plates 105-106; a reference electrode consists in at least one strip 110, this reference electrode being connected to the positive pole of the bias power supply; and the strip is interposed between the two plates.

Abstract: The invention relates to an ion implanter that comprises an enclosure ENV having arranged therein a substrate carrier PPS connected to a substrate power supply ALT via a high voltage electrical passage PET, the enclosure ENV being provided with pump means PP, PS, the enclosure ENV also having at least two cylindrical source bodies CS1, CS2 free from any obstacle and arranged facing the substrate carrier. This implanter is remarkable in that it includes at least one confinement coil BCI1-BCS1, BCI2-BCS2 per source body CS1, CS2.

Abstract: A control module for an ion implanter having a power supply, the power supply comprising: an electricity generator HT having its positive pole connected to ground; a first switch SW1 having its first pole connected to the negative pole of the generator HT and having its second pole connected to the outlet terminal S of the power supply; and a second switch SW2 having its first pole connected to the outlet terminal S and having its second pole connected to a neutralization terminal N. The control module also comprises a current measurement circuit AMP for measuring the current that flows between the second pole of the second switch SW2 and the neutralization terminal N.

Abstract: The present invention relates to a control module for an ion implanter having a power supply, the power supply comprising: an electricity generator HT having its positive pole connected to ground; a first switch SW1 having its first pole connected to the negative pole of the generator HT and having its second pole connected to the outlet terminal S of the power supply; and a second switch SW2 having its first pole connected to the outlet terminal S and having its second pole connected to a neutralization terminal N. The control module also comprises a current measurement circuit AMP for measuring the current that flows between the second pole of the second switch SW2 and the neutralization terminal N. The invention also provides an ion implanter fitted with this control module.

Abstract: The present invention relates to a dose-measurement device for ion implantation, the device comprising a module CUR for estimating implantation current, a secondary electron detector DSE, and a control circuit CC for estimating the ion current by taking the difference between said implantation current and the current from said secondary electron detector. Furthermore, said high-energy secondary electron detector comprises a collector COL, P supporting exactly three mutually insulated electrodes: a first repulsion electrode G1, A1, T1 for repelling charges of a predetermined sign that are to be repelled, said electrode being provided with at least one orifice for passing electrons; a second repulsion electrode G2, A2, T2 for repelling charges of the opposite sign that are to be repelled, said electrode also being provided with at least one orifice for passing electrons; and a selection electrode G3, A3, T3, this electrode also being provided with at least one orifice for passing electrons.

Abstract: The present invention relates to a method of controlling an ion implanter having a plasma power supply AP and a substrate power supply, the substrate power supply comprising: an electricity generator; a first switch SW1 connected between the generator and the output terminal of the substrate power supply; and a second switch SW2 connected between the output terminal and a neutralization terminal; the method including an implantation stage A-D and a neutralization stage E-H. The method also includes a relaxation stage C-F overlapping the implantation stage and the neutralization stage, during which relaxation stage the plasma power supply is inactivated. Furthermore, the neutralization stage includes a preliminary step E-F for closing the second switch, this preliminary step being followed by a cancellation step F-G for activating the plasma power supply AP.

Abstract: The present invention provides a support that comprises: an electrically conductive biased table; an insulating electrostatic substrate carrier 20 in the form of a cylinder having a shoulder 21, the bottom face of the substrate carrier 20 facing the biased table and its top face 22 presenting a bearing plane designed to receive a substrate; and an electrically conductive clamping collar for clamping the shoulder 21 against the biased table. The support also has at least one electrically conductive element 201-202-203 for connecting the bearing plane to the shoulder 211.

Abstract: The present invention provides an ion implantation machine comprising: an enclosure ENV that is connected to a pump device VAC; a negatively polarized HT substrate-carrier PPS that is arranged inside said enclosure ENV; and a plasma feed device AP in the form of a generally cylindrical body extending between an initial section and a terminal section, the device having a main chamber PR provided with an ionization cell BC1, ANT1; said main chamber PR being provided with a gas delivery orifice ING; and the final section CL of said main chamber being provided with head-loss means for creating a pressure drop relative to said body AP. Furthermore, said plasma feed device AP also includes an auxiliary chamber AUX arranged beyond said final section, said auxiliary chamber opening out into said enclosure ENV at said terminal section.

Abstract: The invention relates to an optical probe including: a first cell C1 including a first emitter module LED1 and a first detector module D1 suitable for producing a first detection signal; a second cell C2 including a second detector module D2 suitable for producing a first monitoring signal for monitoring the first emitter module LED1; and a control circuit for producing a first measurement signal by weighting the first detection signal by means of the first monitoring signal. Furthermore, the second cell C2 has a second emitter module LED2, the second detector module D2 is suitable for producing a second detection signal, and the first detector module D1 is suitable for producing a second monitoring signal for monitoring the second emitter module LED2.

Abstract: The present invention relates to a dose-measurement device for ion implantation, the device comprising a module CUR for estimating implantation current, a secondary electron detector DSE, and a control circuit CC for estimating the ion current by taking the difference between said implantation current and the current from said secondary electron detector. Furthermore, said high-energy secondary electron detector comprises a collector COL, P supporting exactly three mutually insulated electrodes: a first repulsion electrode G1, A1, T1 for repelling charges of a predetermined sign that are to be repelled, said electrode being provided with at least one orifice for passing electrons; a second repulsion electrode G2, A2, T2 for repelling charges of the opposite sign that are to be repelled, said electrode also being provided with at least one orifice for passing electrons; and a selection electrode G3, A3, T3, this electrode also being provided with at least one orifice for passing electrons.

Abstract: The present invention relates to a high-energy secondary electron detector comprising a collector P supporting only three electrodes that are insulated from one another and that are biased relative to the collector: a first repulsion electrode A1 for repelling charges of a first predetermined sign that are to be repelled, this negatively-biased electrode being provided with at least one opening for passing electrons; a second repulsion electrode A2 for repelling charges of the opposite sign that are to be repelled, this positively-biased electrode also being provided with at least one opening for passing electrons; and a selection electrode A3, this electrode also being provided with at least one opening for passing electrons; the openings in said electrodes being in alignment along a conduction cylinder D. Furthermore, the selection electrode A3 is negatively biased. The invention also provides a method of detecting secondary electrons by means of the detector.

Abstract: The invention relates to an optical probe for measuring absorption in order to produce an absorption value Am, which probe comprises an analysis cell CA, said analysis cell including an emission module LED, F1, HD and a detection module H1, D1 suitable for producing a detection signal DS, the probe also including a monitoring cell CM suitable for producing a monitoring signal MS. The monitoring cell is arranged on the light path connecting the emission module to the detection module.

Abstract: The invention relates to a wavelength spectroscopy device comprising, on a substrate a filter cell CF constituted by two mirrors separated by a spacer membrane, the filter cell being made up of a plurality of interference filters. Furthermore, the device also comprises an emission cell CE comprising a plurality of emission sources, each of said sources being associated with one of said interference filters.

Abstract: The invention relates to a wavelength spectroscopy device comprising, on a substrate SUB, a filter module made up of two mirrors MIR1, MIR2 that are spaced apart by a spacer membrane SP. The filter module comprises a plurality of interference filters FP1, FP2, FP3, the thickness of said spacer membrane SP being constant for any given filter and varying from one filter to another.

Abstract: The invention provides a waveguide comprising a channel 12 on an optical substrate 11, the refractive index of the channel being higher than that of the substrate. The waveguide includes at least one guide layer 13 arranged on the channel, the index of said guide layer being higher than that of the substrate. In addition, the channel 12 is integrated in the substrate 11. advantageously, the waveguide further includes a covering layer 14 deposited on the guide layer 13, the index of said covering layer being lower than that of the guide layer and lower than that of the channel. The invention also provides a method of fabricating the waveguide.

Abstract: The invention relates to a method of optical characterization, comprising a step of evaluating the doping of a substrate (SUB) using a reflected beam emanating from a light source, said method being carried out using apparatus comprising: said light source (LAS) to produce an incident beam (I) in an axis of incidence; a first detector (DET1, DET2) to measure the power of said reflected beam (R) in an axis of reflection; said axes of incidence and reflection crossing at a measurement point and forming a non-zero angle of measurement; and a polarizer (POL) disposed in the path of the incident beam (I). Furthermore, the light source (LAS) is monochromatic. The invention also envisages an ion implanter provided with said apparatus.

Abstract: The present invention relates to an ion implanter IMP comprising a pulsed plasma source SPL, a substrate-carrier tray PPS, and a power supply ALT for the tray. The implanter also includes a capacitor C connected directly to ground E and connected downstream from the tray power supply ALT. The invention also provides a method of using the implanter.