Abstract: A multi-layer interposer in which the X-Y engineering change wiring pattern in the interposer terminates in a pattern of pads on the upper surface of the interposer around the periphery of the chip. In order to make an engineering change, a jumper wire connect pads on adjacent interposers mounted on the multi-chip module.

Abstract: The present invention discloses multi-layered resist structures and methods of producing them which can be used in electronic device lithography to produce micrometer and submicrometer geometries.The resist structure comprises two or more layers at least one of which is a metallic material and at least one of which is a radiation-sensitive material. The metallic layer exhibits both a high atomic number and a high density. The metallic material is positioned relative to the radiation-sensitive polymeric material so that it can be used to control reflection and backscatter of radiation used to create a latent image within the radiation-sensitive polymeric material. The thickness of the metallic layer is determined by the amount of reflection desired and the amount of backscatter permitted into the layer of radiation-sensitive polymeric material.

Abstract: The present invention discloses multi-layered resist structures and methods of producing them which can be used in electronic device lithography to produce micrometer and submicrometer geometries.The resist structure comprises two or more layers at least one of which is a metallic material and at least one of which is a radiation-sensitive material. The metallic layer exhibits both a high atomic number and a high density. The metallic material is positioned relative to the radiation-sensitive polymeric material so that it can be used to control reflection and backscatter of radiation used to create a latent image within the radiation-sensitive polymeric material. The thickness of the metallic layer is determined by the amount of reflection desired and the amount of backscatter permitted into the layer of radiation-sensitive polymeric material.

Abstract: Disclosed is a method of forming a trench pattern in a ceramic green sheet for subsequently filling with a conductive paste resulting in a fully inlaid conductor pattern therefrom. Starting with a green sheet, a high contrast ink drawing of the desired conductor pattern is formed thereon. The drawing may be formed by direct printing on the green sheet or by first printing it on a flexible substrate such as paper and then transferring by xerography to the green sheet. Next, the green sheet is illuminated with an intense noncoherent light source to cause a high degree of absorption of the light energy by the inked areas and volatilization of the green sheet binder material thereunder, thereby forming a trench pattern conforming to the drawn pattern.

Abstract: A controllable magnetic field influences the position or shape or density distribution of a ferrofluid so that the ferrofluid causes or prevents the coupling of light between optical paths either by physically causing movement of a waveguide (e.g., optical fiber) or by itself physically moving into or out of a coupling region between optical paths.

Abstract: A process for forming ball limiting metallurgy pad structure for a semiconductor device solder bond interconnection comprising:forming a conductive layer that is adherent to the semiconductor device passivating layer,forming a relatively thick layer of a material having a high thermal conductivity,forming a barrier layer that protects the high conductivity layer by physically preventing any interaction or alloying with the subsequent layers, andforming a layer of a material that is solder wettable.

Abstract: A ball limiting metallurgy pad structure for a semiconductor device solder bond interconnection comprising:a conductive layer that is adherent to the semiconductor device passivating layer,a relatively thick layer of a material having a high thermal conductivity,a barrier layer that protects the high conductivity layer by physically preventing any interaction or alloying with the subsequent layers, anda layer of a material that is solder wettable.

Abstract: A device for removing contaminant impurities, particularly contaminants existing at very low levels, from a liquid, including a heating element at least partially immersible in the liquid, a confinement means at least partially immersible in the liquid for maintaining a pulsating bubble of vapor of the liquid, the heating element located within the confining means, openings in the confining means to allow periodic partial escape of the vapor bubble and ingress of liquid.

Abstract: A semiconductor device and carrier assembly package having a silicon integrated circuit semiconductor device provided with at least three raised electrical contacts on a first surface, a device support substrate of Si.sub.3 N.sub.4 provided with a conductive metallurgy pattern on at least one surface, the conductive pattern including an electrical contact configuration matching the raised electrical contacts on the device, metallurgical bonds between the raised electrical contacts on the device and the electrical contact pattern on the support substrate, and an electrically conductive means for electrically connecting elements of the conductive metallurgy pattern to coacting elements off the support substrate.