Flip chip structure including a silicon semiconductor element bonded to an Si.sub.3 N.sub.4 base substrate

Abstract

A semiconductor device and carrier assembly package having a silicon integrated circuit semiconductor device provided with at least three raised electrical contacts on a first surface, a device support substrate of Si.sub.3 N.sub.4 provided with a conductive metallurgy pattern on at least one surface, the conductive pattern including an electrical contact configuration matching the raised electrical contacts on the device, metallurgical bonds between the raised electrical contacts on the device and the electrical contact pattern on the support substrate, and an electrically conductive means for electrically connecting elements of the conductive metallurgy pattern to coacting elements off the support substrate.

Description