Abstract: An SMS-based dual mode content subscription system is disclosed. A first broadcast message associated with a subscription content source is received. A set of destination SMS addresses is determined, each destination SMS address associated with a different subscription to the subscription content source and corresponding to a different mobile device. An SMS message that includes the first broadcast message is sent to each destination SMS address, the SMS message identifying a same first sender SMS address. A reply SMS message is received from a first mobile device of a plurality of mobile devices, the reply SMS message being directed to the first sender SMS address and not being distributed to any other mobile device of the plurality of mobile devices. In response to the reply SMS message, a second SMS message that includes a first subscriber message is sent to only the first mobile device.

Abstract: Embodiments herein describe techniques for a semiconductor device including a substrate and a transistor above the substrate. The transistor includes a channel layer above the substrate, a conductive contact stack above the substrate and in contact with the channel layer, and a gate electrode separated from the channel layer by a gate dielectric layer. The conductive contact stack may be a drain electrode or a source electrode. In detail, the conductive contact stack includes at least a metal layer, and at least a metal sealant layer to reduce hydrogen diffused into the channel layer through the conductive contact stack. Other embodiments may be described and/or claimed.

Abstract: A plasma reactor includes a processing chamber having a lower processing portion having an axis of symmetry and an array of cavities extending upwardly from the lower processing portion. A gas distributor couples plural gas sources to a plurality of gas inlets of the cavities, and the gas distributor includes a plurality of valves with each valve selectively connecting a respective gas inlet to one of the plural gas sources. Power is applied by an array of conductors that includes a respective conductor for each respective cavity with each conductor adjacent and surrounding a cavity. A power distributor couples a power source and the array of conductors, and the power distributor includes a plurality of switches with a switch for each respective conductor.

Abstract: A plasma reactor includes a processing chamber having a lower processing portion having an axis of symmetry and an array of cavities extending upwardly from the lower processing portion. A gas distributor couples plural gas sources to a plurality of gas inlets of the cavities, and the gas distributor includes a plurality of valves with each valve selectively connecting a respective gas inlet to one of the plural gas sources. Power is applied by an array of conductors that includes a respective conductor for each respective cavity with each conductor adjacent and surrounding a cavity. A power distributor couples a power source and the array of conductors, and the power distributor includes a plurality of switches with a switch for each respective conductor.

Abstract: An external magnetic filter to trap electrons surrounds a reactor chamber and has multiple magnets arranged in a circle, the magnetic orientation of each individual magnet being rotated relative to the orientation of the adjacent individual magnet by a difference angle that is a function of the arc subtended by the individual magnet.

Abstract: Methods and apparatus for measurement of a surface charge profile of an electrostatic chuck are provided herein. In some embodiments, an apparatus for measurement of a surface charge profile of an electrostatic chuck includes: an electrostatic charge sensor disposed on a substrate to obtain data indicative of an electrostatic charge on an electrostatic chuck; and a transmitter disposed on the substrate and having an input in communication with an output of the electrostatic charge sensor to transmit the data.

Abstract: Embodiments herein describe techniques for a semiconductor device including a substrate and a transistor above the substrate. The transistor includes a channel layer above the substrate, a conductive contact stack above the substrate and in contact with the channel layer, and a gate electrode separated from the channel layer by a gate dielectric layer. The conductive contact stack may be a drain electrode or a source electrode. In detail, the conductive contact stack includes at least a metal layer, and at least a metal sealant layer to reduce hydrogen diffused into the channel layer through the conductive contact stack. Other embodiments may be described and/or claimed.

Abstract: Plural sensors on an interior surface of a reactor chamber are linked by respective RF communication channels to a hub inside the reactor chamber, which in turn is linked to a process controller outside of the chamber.

Abstract: The disclosed embodiments include methods and systems for providing account status notifications. The disclosed embodiments include, for example, a device for providing account status notifications including a memory storing software instructions and one or more processors configured to execute the software instructions to perform operations. In one aspect, the operations may include receiving account status notification information for a first account associated with a user. The account status notification information may be generated based on one or more notification rules and account information associated with the first account. The operations may also include generating, based on the received account status notification information, a first account status indicator that provides a status of a first account parameter associated with the first account that is presented via a device component without a user request to receive the status of the first account parameter.

Abstract: Plural sensors on an interior surface of a reactor chamber are linked by respective RF communication channels to a hub inside the reactor chamber, which in turn is linked to a process controller outside of the chamber.

Abstract: Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

Abstract: Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

Abstract: Plural sensors on an interior surface of a reactor chamber are linked by respective RF communication channels to a hub inside the reactor chamber, which in turn is linked to a process controller outside of the chamber.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber and having a support surface to support a substrate; an inductive coil disposed above the dielectric lid to inductively couple RF energy into the internal processing volume to form a plasma above the substrate support; and a first inductive applicator ring coupled to a lift mechanism to position the first inductive applicator ring within the internal processing volume.

Abstract: A method and system for making financial or medical decisions. The method comprises training sets of models using classification training with sets of data derived from segregated data sources. Overall weighting of each model within the sets of models are determined for each of the sub-datasets. The sets of models, the overall weighting of each model and a number of examples provided from the data for each of the datasets are transmitted to a central server over a communication network, wherein the central server is configured to determine the relative weights of each of the sets of models in the overall ensemble model based on the number of examples, combine the sets of models, receive new application data, and predict at least one of outcome variables, an uncertainty factor for the variables, and drivers of the outcome variables based on the new application data.

Abstract: Spatial distribution of RF power delivered to plasma in a processing chamber is controlled using an arrangement of primary and secondary inductors, wherein the current through the secondary inductors affects the spatial distribution of the plasma. The secondary inductors are configured to resonate at respectively different frequencies. A first secondary inductor is selectively excited to resonance, during a first time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the first secondary inductor. A second secondary inductor is selectively excited to resonance, during a second time period within a duty cycle, by delivering power to a primary inductor at the resonant frequency of the second secondary inductor. The secondary inductors are isolated from one another and terminated such that substantially all current that passes through them and into the plasma results from mutual inductance with a primary inductor.

Abstract: A plasma source consisting of an array of plasma point sources that controls generation of charged particles and radicals spatially and temporally over a user defined region.

Abstract: Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber and having a support surface to support a substrate; an inductive coil disposed above the dielectric lid to inductively couple RF energy into the internal processing volume to form a plasma above the substrate support; and a first inductive applicator ring coupled to a lift mechanism to position the first inductive applicator ring within the internal processing volume.

Abstract: Implementations described herein inject feedstock gases into multiple zones of an inductively coupled plasma processing reactor with minimal or no effect on process skew. In one embodiment, an integrated gas and coil assembly is provided that includes an upper surface and a lower surface, a first RF field applicator coil bounded at the upper surface and the lower surface, a second RF field applicator coil circumscribed by the first RF field applicator coil and bounded at the upper surface and the lower surface and an RF shield disposed between the first and second RF field generator wherein the RF shield extends from the lower surface and past the upper surface. The RF shield may have at least one gas channel disposed therethrough.