Abstract: A method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps on a semiconductor substrate are used to fill the gaps in a void-free manner. Differential heating characteristics of a substrate in a high-density plasma chemical vapor deposition (HDP-CVD) system helps to prevent the gaps from being pinched off before they are filled. The power distribution between coils forming the plasma varies the angular dependence of the sputter etch component of the plasma, and thus may be used to modify the gap profile, independently or in conjunction with differential heating. A heat source may be applied to the backside of a substrate during the concurrent deposition/etch process to further enhance the profile modification characteristics of differential heating.

Abstract: Method and apparatus for determining an endpoint of a cleaning process running in a chamber. In particular, one embodiment of the present invention is a method that includes steps of: (a) directing radiation absorbed by a byproduct of the cleaning process into an exhaust line of the chamber; (b) detecting a measure of absorbance of the radiation by the byproduct; and (c) determining the endpoint when the measure of absorbance falls within a predetermined window.

Abstract: A method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps on a semiconductor substrate are used to fill the gaps in a void-free manner. Differential heating characteristics of a substrate in a high-density plasma chemical vapor deposition (HDP-CVD) system helps to prevent the gaps from being pinched off before they are filled. The power distribution between coils forming the plasma varies the angular dependence of the sputter etch component of the plasma, and thus may be used to modify the gap profile, independently or in conjunction with differential heating. A heat source may be applied to the backside of a substrate during the concurrent deposition/etch process to further enhance the profile modification characteristics of differential heating.

Abstract: A substrate processing chamber 30 comprising a first gas distributor 65 adapted to provide a process gas into the chamber 30 to process the substrate 25, a second gas distributor 215 adapted to provide a cleaning gas into the chamber 30 to clean the chamber, and an exhaust 90 to exhaust the process gas or cleaning gas from the chamber 30.

Abstract: A low dielectric constant insulating film on a substrate is formed by introducing a process gas comprising a silicon source, a fluorine source, and oxygen into a chamber. The process gas is formed into a plasma to deposit at least a first portion of the insulating film over the substrate. The wafer and the first portion of the insulating film are then heated to a temperature of about 100-500° C. for a period of time. The film may include several separate portions, the deposition of each of which is followed by a heating step. The film has a low dielectric constant and good gas-fill and stability due to the lack of free fluorine in the film.

Abstract: A low dielectric constant insulating film on a substrate is formed by introducing a process gas comprising a silicon source, a fluorine source, and oxygen into a chamber. The process gas is formed into a plasma to deposit at least a first portion of the insulating film over the substrate. The wafer and the first portion of the insulating film are then heated to a temperature of about 100-500° C. for a period of time. The film may include several separate portions, the deposition of each of which is followed by a heating step. The film has a low dielectric constant and good gap-fill and stability due to the lack of free fluorine in the film.

Abstract: A method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps on a semiconductor substrate are used to fill the gaps in a void-free manner. Differential heating characteristics of a substrate in a high-density plasma chemical vapor deposition (HDP-CVD) system helps to prevent the gaps from being pinched off before they are filled. The power distribution between coils forming the plasma varies the angular dependence of the sputter etch component of the plasma, and thus may be used to modify the gap profile, independently or in conjunction with differential heating. A heat source may be applied to the backside of a substrate during the concurrent deposition/etch process to further enhance the profile modification characteristics of differential heating.

Abstract: A low dielectric constant insulating film on a substrate is formed by introducing a process gas comprising a silicon source, a fluorine source, and oxygen into a chamber. The process gas is formed into a plasma to deposit at least a first portion of the insulating film over the substrate. The wafer and the first portion of the insulating film are then heated to a temperature of about 100-500° C. for a period of time. The film may include several separate portions, the deposition of each of which is followed by a heating step. The film has a low dielectric constant and good gap-fill and stability due to the lack of free fluorine in the film.

Abstract: A sequence of process steps forms a fluorinated silicon glass (FSG) layer on a substrate. This layer is much less likely to form a haze or bubbles in the layer, and is less likely to desorb water vapor during subsequent processing steps than other FSG layers. An undoped silicon glass (USG) liner protects the substrate from corrosive attack. The USG liner and FSG layers are deposited on a relatively hot wafer surface and can fill trenches on the substrate as narrow as 0.8 &mgr;m with an aspect ratio of up to 4.5:1.

Abstract: A method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps on a semiconductor substrate are used to fill the gaps in a void-free manner. Differential heating characteristics of a substrate in a high-density plasma chemical vapor deposition (HDP-CVD) system helps to prevent the gaps from being pinched off before they are filled. The power distribution between coils forming the plasma varies the angular dependence of the sputter etch component of the plasma, and thus may be used to modify the gap profile, independently or in conjunction with differential heating. A heat source may be applied to the backside of a substrate during the concurrent deposition/etch process to further enhance the profile modification characteristics of differential heating.

Abstract: An apparatus for processing substrates that is configured for a cleaning operation by loading a cleaning process wafer onto the susceptor before forming a cleaning plasma in the processing chamber. In one embodiment, a ceramic wafer is chosen to have a dielectric value sufficient to alter the electromagnetic field of the plasma, and spreads the plasma away from the susceptor during a cleaning operation, thus reducing damage to the susceptor. The plasma may be directed towards the walls of the chamber to reduce chamber cleaning time.

Abstract: An insulating film with a low dielectric constant is more quickly formed on a substrate by reducing the co-etch rate as the film is deposited. The process gas is formed into a plasma from silicon-containing and fluorine-containing gases. The plasma is biased with an RF field to enhance deposition of the film. Deposition and etching occur simultaneously. The relative rate of deposition to etching is increased in the latter portion of the deposition process by decreasing the bias RF power, which decreases the surface temperature of the substrate and decreases sputtering and etching activities. Processing time is reduced compared to processes with fixed RF power levels. Film stability, retention of water by the film, and corrosion of structures on the substrate are all improved. The film has a relatively uniform and low dielectric constant and may fill trenches with aspect ratios of at least 4:1 and gaps less than 0.5 .mu.m.

Abstract: A corrosion resistant apparatus for processing a substrate in corrosive process gas comprises (i) a process chamber, (ii) a process gas inlet provided for introducing process gas into the chamber, (iii) a process gas exhaust for exhausting process gas from the chamber, and (iv) processing components for processing the substrate in the chamber. At least a portion of any one of the (i) process chamber, (ii) process gas inlet, (iii) process gas exhaust, or (iv) processing components, is exposed to the corrosive gas in the chamber, and is made of an alloy comprising nickel and eutectic component, the alloy being substantially resistant to corrosion by the corrosive process gas.

Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

Abstract: A sequence of process steps forms a fluorinated silicon glass (FSG) layer on a substrate. This layer is much less likely to form a haze or bubbles in the layer, and is less likely to desorb water vapor during subsequent processing steps than other FSG layers. An undoped silicon glass (USG) liner protects the substrate from corrosive attack. The USG liner and FSG layers are deposited on a relatively hot wafer surface and can fill trenches on the substrate as narrow as 0.8 .mu.m with an aspect ratio of up to 4.5:1.

Abstract: A method and apparatus for protecting a susceptor during a cleaning operation by loading a ceramic wafer onto the susceptor before introducing the cleaning agent into the chamber is provided. In particular, the ceramic wafer is chosen to have a dielectric value sufficient to alter the electromagnetic field of a plasma to spread the plasma away from the susceptor during a cleaning operation, directing more of the plasma towards the walls of the chamber.

Abstract: The present invention provides a method and apparatus for reducing the concentration of mobile ion and metal contaminants in a processing chamber by increasing the bias RF power density to greater than 0.051 W/mm.sup.2 and increasing the season time to greater than 30 seconds, during a chamber seasoning step. The method of performing a season step in a chamber by depositing a deposition material under the combined conditions of a bias RF power density of about 0.095 W/mm.sup.2 and a season time of from about 50 to about 70 seconds, reduces the mobile ion and metal contaminant concentrations within the chamber by about one order of magnitude.

Abstract: We have discovered that corrosion of an aluminum article (such as a susceptor) exposed to corrosive halogen-containing species within semiconductor processing apparatus can be avoided by fabricating the article from a high purity aluminum-magnesium alloy having an optimum magnesium content. Upon exposure of the article to a halogen-containing species, a protective magnesium halide layer is formed upon or beneath the surface of the article. The protective layer prevents halogens from penetrating to the base aluminum, thereby protecting the article from corrosion and cracking. To protect the magnesium halide layer from abrasion, the article preferably also includes a hard, cohesive coating over the magnesium halide layer. A preferred cohesive coating is aluminum oxide or aluminum nitride. The magnesium content of the aluminum article, to enable formation of a magnesium halide layer, should be in the range of about 0.1% to about 6% by weight, depending on the operational temperature of the article.

Abstract: Corrosion of an aluminum article exposed to corrosive halogen-containing species within semiconductor processing apparatus is avoided by fabricating the aluminum article from a high purity aluminum-magnesium alloy having a magnesium content of about 0.1% to 1.5% by weight, either throughout the entire article or at least in the surface region which is to be rendered corrosion-resistant, and a mobile impurity atom content of less than 0.2% by weight. Upon exposure of the article to a halogen-containing species, a protective magnesium halide layer is formed beneath the surface of the article. The protective layer prevents halogens from penetrating to the base aluminum, thereby protecting the article from corrosion and cracking. To protect the magnesium layer from abrasion, the article preferably also includes a hard, cohesive coating over the magnesium halide layer. A preferred cohesive coating is aluminum oxide or aluminum nitride.