Abstract: A composition comprising: an organic semiconductor comprising one or more aromatic or heteroaromatic moieties; one or more cations covalently bonded to the organic semiconductor, or to a second material; and at least one anion donor selected from the class of divalent and higher valent anions; wherein the organic semiconductor has an electron affinity between 1.5 and 4.5 eV.

Abstract: There is provided a material comprising a n-doped electrically conductive polymer comprising at least one electron-deficient aromatic moiety, each electron-deficient aromatic moiety having a gas-phase electron affinity (EA) of 1-3 eV; and at least one counter-cation covalently bonded to the polymer or to a further polymer comprised in the material, the polymer being n-doped to a charge density of 0.1-1 electron per electron-deficient aromatic moiety, the polymer being capable of forming a layer having a vacuum workfunction (WF) of 2.5-4.5 eV, and wherein all the counter-cations comprised in the material are immobilised such that any electron in the polymer cannot significantly diffuse or migrate out of the polymer. There is also provided a method of preparing the material.

Abstract: The present invention discloses a method for transferring a thin film from a first substrate to a second substrate comprising the steps of: providing a transfer structure and a thin film provided on a surface of a first substrate, the transfer structure comprising a support layer and a film contact layer, wherein the transfer structure contacts the thin film; removing the first substrate to obtain the transfer structure with the thin film in contact with the film contact layer; contacting the transfer structure obtained with a surface of a second substrate; and removing the film contact layer, thereby transferring the thin film onto the surface of the second substrate.

Abstract: This invention provides a transistor device structure that incorporates a self-aligned doped contact formed by inserting a molecularly-thin layer of bonded anions between the semiconductor and the source-drain electrode array wherein the semiconductor is p-doped at the interface with the bonded-anion layer, and a method of making this structure using oxidant species incorporated into the molecularly-thin layer. The device shows ohmic hole injection and hole extraction at the contacts to give high-performance transistor characteristics with low contact resistance.

Abstract: This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.

Abstract: There is provided a material comprising a n-doped electrically conductive polymer comprising at least one electron-deficient aromatic moiety, each electron-deficient aromatic moiety having a gas-phase electron affinity (EA) of 1-3 eV; and at least one counter-cation covalently bonded to the polymer or to a further polymer comprised in the material, the polymer being n-doped to a charge density of 0.1-1 electron per electron-deficient aromatic moiety, the polymer being capable of forming a layer having a vacuum workfunction (WF) of 2.5-4.5 eV, and wherein all the counter-cations comprised in the material are immobilised such that any electron in the polymer cannot significantly diffuse or migrate out of the polymer. There is also provided a method of preparing the material.

Abstract: This invention provides a transistor device structure that in-corporates a self-aligned doped contact formed by inserting a molecularly-thin layer of bonded anions between the semiconductor and the source-drain electrode array wherein the semiconductor is p-doped at the interface with the bonded-anion layer, and a method of making this structure using oxidant species incorporated into the molecularly-thin layer. The device shows ohmic hole injection and hole extraction at the contacts to give high-performance transistor characteristics with low contact resistance.

Abstract: This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.

Abstract: A cross-linking moiety having a general formula I: ArF-W, wherein ArF comprises a fluorinated phenyl azide group having at least one non-fluorine substituent that is bulkier than fluorine at a meta position relative to the azide group, and W comprises an electron-withdrawing group.

Abstract: This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.

Abstract: A functionalised graphene oxide and a method of making a functionalized graphene oxide comprising: (i) oxidizing graphite to form graphite oxide wherein the graphene sheets which make up the graphite independently of each other have a basal plane fraction of carbon atoms in the sp2-hybridised state between 0.1 and 0.9, wherein the remainder fraction comprises sp3-hybridised carbon atoms which are bonded to oxygen groups selected from hydroxyl and/or epoxy and/or carboxylic acid; and (ii) exfoliating and in-situ functionalizing the graphite oxide surface with one or more functional groups such that fictionalization of the surface is effected at a concentration greater than one functional group per 100 carbon atoms and less than one functional group per six carbon atoms. The functionalized graphene oxide is dispersible at high concentrations in appropriate solvents without aggregating or precipitating over extended periods at room temperature.

Abstract: This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.

Abstract: An ambipolar, light-emitting transistor comprising an organic semiconductive layer in contact with an electron injecting electrode and a hole injecting electrode separated by a distance L defining the channel length of the transistor, in which the zone of: the organic semiconductive layer from which the light is emitted is located more than L/10 away from both the electron as well as the hole injecting electrode.

Abstract: This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.

Abstract: The present invention discloses a method for transferring a thin film from a first substrate to a second substrate comprising the steps of: providing a transfer structure and a thin film provided on a surface of a first substrate, the transfer structure comprising a support layer and a film contact layer, wherein the transfer structure contacts the thin film; removing the first substrate to obtain the transfer structure with the thin film in contact with the film contact layer; contacting the transfer structure obtained with a surface of a second substrate; and removing the film contact layer, thereby transferring the thin film onto the surface of the second substrate.

Abstract: An optical-limiter is disclosed herein. In an embodiment, the optical limiter comprises chemically functionalized graphene substantially spaced apart as single sheets in a substantially transparent liquid cell or solid thin film. A method of fabricating an optical response material is also disclosed.

Abstract: A method of forming a polymer device including the steps (i) of depositing on a substrate a solution containing a polymer or oligomer and a crosslinking moiety, to form a layer, and, (ii) curing the layer formed in step (i) under conditions to form an insoluble crosslinked polymer, wherein the crosslinking moiety is present in step (i) in an amount in the range of from 0.05 mol % to 5 mol % based on the total number of moles or repeat units of the polymer or oligomer and the crosslinking moiety in the solution.

Abstract: The present invention provides a conductive composite comprising: suspension matrix, metal nanoparticles suspended within the suspension matrix, wherein the conductive composite has a conductivity greater than 104 S cm?1.

Abstract: A cross-linking moiety having a general formula I: N3—ArF—W, wherein ArF comprises a fluorinated phenyl azide group having at least one non-fluorine substituent that is bulkier than fluorine at a meta position relative to the azide group, and W comprises an electron-withdrawing group.

Abstract: A field effect transistor device comprising: a source electrode; a drain electrode; a semiconductive region comprising an organic semiconductor material and defining a channel of the device between the source electrode and the drain electrode; a first gate structure comprising a first gate electrode and a first dielectric region located between the first gate electrode and the semiconductive region; and a second gate structure comprising a second gate electrode and a second dielectric region located between the second gate electrode and the semiconductive region; whereby the conductance of the semiconductor region in the channel can be influenced by potentials applied separately or to both the first gate electrode and the second gate electrode.