Patents by Inventor Lee Chen

Lee Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150041432
    Abstract: A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.
    Type: Application
    Filed: January 30, 2014
    Publication date: February 12, 2015
    Inventors: Zhiying Chen, Lee Chen, Merritt Funk
  • Patent number: 8943577
    Abstract: A system and method for a distributed multi-processing security gateway establishes a host side session, selects a proxy network address for a server, uses the proxy network address to establish a server side session, receives a data packet, assigns a central processing unit core from a plurality of central processing unit cores in a multi-core processor of the security gateway to process the data packet, processes the data packet according to security policies, and sends the processed data packet. The proxy network address is selected such that a same central processing unit core is assigned to process data packets from the server side session and the host side session. By assigning central processing unit cores in this manner, higher capable security gateways are provided.
    Type: Grant
    Filed: May 1, 2013
    Date of Patent: January 27, 2015
    Assignee: A10 Networks, Inc.
    Inventors: Lee Chen, Ronald Wai Lun Szeto
  • Publication number: 20150025028
    Abstract: A method for treating an abnormal polyglutamine-mediated disease is disclosed, which comprises: administering a pharmaceutical composition comprising a trehalose-based compound to a subject in need. Additionally, the pharmaceutical composition optionally further comprises a trehalase inhibitor.
    Type: Application
    Filed: July 15, 2014
    Publication date: January 22, 2015
    Inventors: Guey-Jen LEE-CHEN, Hsiu-Mei HSIEH, Guan-Chiun LEE
  • Publication number: 20140377966
    Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.
    Type: Application
    Filed: June 19, 2014
    Publication date: December 25, 2014
    Inventors: Merritt Funk, Jianping Zhao, Lee Chen
  • Publication number: 20140374025
    Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.
    Type: Application
    Filed: June 19, 2014
    Publication date: December 25, 2014
    Inventors: Jianping Zhao, Merritt Funk, Lee Chen
  • Patent number: 8918857
    Abstract: A system and method for a distributed multi-processing security gateway establishes a host side session, selects a proxy network address for a server, uses the proxy network address to establish a server side session, receives a data packet, assigns a central processing unit core from a plurality of central processing unit cores in a multi-core processor of the security gateway to process the data packet, processes the data packet according to security policies, and sends the processed data packet. The proxy network address is selected such that a same central processing unit core is assigned to process data packets from the server side session and the host side session. By assigning central processing unit cores in this manner, higher capable security gateways are provided.
    Type: Grant
    Filed: May 1, 2013
    Date of Patent: December 23, 2014
    Assignee: A10 Networks, Inc.
    Inventors: Lee Chen, Ronald Wai Lun Szeto
  • Patent number: 8914871
    Abstract: A system and method for a distributed multi-processing security gateway establishes a host side session, selects a proxy network address for a server, uses the proxy network address to establish a server side session, receives a data packet, assigns a central processing unit core from a plurality of central processing unit cores in a multi-core processor of the security gateway to process the data packet, processes the data packet according to security policies, and sends the processed data packet. The proxy network address is selected such that a same central processing unit core is assigned to process data packets from the server side session and the host side session. By assigning central processing unit cores in this manner, higher capable security gateways are provided.
    Type: Grant
    Filed: May 1, 2013
    Date of Patent: December 16, 2014
    Assignee: A10 Networks, Inc.
    Inventors: Lee Chen, Ronald Wai Lun Szeto
  • Publication number: 20140360670
    Abstract: A processing system is disclosed, having a plasma source chamber that excites source plasma to generate an electron beam, and a process chamber that houses a substrate for exposure of the substrate to the electron beam. The processing system also includes an electron injector that injects electrons from the source plasma into the electron beam as the electron beam enters the process chamber. The electron beam includes a substantially equal number of electrons and positively charged ions in the process chamber. In one embodiment, the processing system also includes a magnetic field generator that generates a magnetic field in the process chamber to capture the electrons included in the electron beam to generate a voltage potential between the magnetic field generator and the substrate. The voltage potential accelerates the positively charged ions to the substrate and minimizes the electrons that reach the substrate.
    Type: Application
    Filed: September 13, 2013
    Publication date: December 11, 2014
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Lee Chen, Merritt Funk, Zhiying Chen
  • Publication number: 20140357689
    Abstract: A method for treating an abnormal polyglutamine-mediated disease is disclosed, wherein indole and an indole-based compound contained in a pharmaceutical composition used in the method of the present invention can reduce the polyglutamine aggregation through decreasing reactive oxygen species production and increasing the activity of chaperone and autophagy.
    Type: Application
    Filed: May 20, 2014
    Publication date: December 4, 2014
    Applicant: National Taiwan Normal University
    Inventors: Guey-Jen LEE-CHEN, Hsiu-Mei HSIEH, Ching-Fa YAO
  • Patent number: 8904512
    Abstract: A system and method for a distributed multi-processing security gateway establishes a host side session, selects a proxy network address for a server, uses the proxy network address to establish a server side session, receives a data packet, assigns a central processing unit core from a plurality of central processing unit cores in a multi-core processor of the security gateway to process the data packet, processes the data packet according to security policies, and sends the processed data packet. The proxy network address is selected such that a same central processing unit core is assigned to process data packets from the server side session and the host side session. By assigning central processing unit cores in this manner, higher capable security gateways are provided.
    Type: Grant
    Filed: May 1, 2013
    Date of Patent: December 2, 2014
    Assignee: A10 Networks, Inc.
    Inventors: Lee Chen, Ronald Wai Lun Szeto
  • Patent number: 8883024
    Abstract: The invention provide apparatus and methods for creating gate structures on a substrate in real-time using Vacuum Ultra-Violet (VUV) data and Electron Energy Distribution Function (EEDƒ) data and associated (VUV/EEDƒ)-related procedures in (VUV/EEDƒ) etch systems. The (VUV/EEDƒ)-related procedures can include multi-layer-multi-step processing sequences and (VUV/EEDƒ)-related models that can include Multi-Input/Multi-Output (MIMO) models.
    Type: Grant
    Filed: October 18, 2011
    Date of Patent: November 11, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Lee Chen, Jianping Zhao
  • Patent number: 8877080
    Abstract: The invention provides an apparatus and methods for creating gate structures on a substrate in real-time using Vacuum Ultra-Violet (VUV) data and Electron Energy Distribution Function (EEDf) data and associated (VUV/EEDf)-related procedures in (VUV/EEDf) etch systems. The (VUV/EEDf)-related procedures can include multi-layer-multi-step processing sequences and (VUV/EEDf)-related models that can include Multi-Input/Multi-Output (MIMO) models.
    Type: Grant
    Filed: October 18, 2011
    Date of Patent: November 4, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Lee Chen, Jianping Zhao
  • Patent number: 8868765
    Abstract: The inventive system includes a host, a network including a security gateway, and a public application. Established are an access session between the network and the host and an application session between the public application and the network. An application session record is created for the application session, and includes the user's public user identity used to access the public application, the user's private user identity used to access the network, a host identity, and an application session time. To determine the private user identity for the application session, the security gateway sends a query with the host identity and the application session time. These are compared with the host identity and access session time in an access session record. If they match, then the private user identity in the access session record is returned, and it is stored as the private user identity in the application session record.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: October 21, 2014
    Assignee: A10 Networks, Inc.
    Inventors: Lee Chen, John Chiong, Xin Wang
  • Patent number: 8847159
    Abstract: An ion energy analyzer for determining an ion energy distribution of a plasma and comprising an entrance grid, a selection grid, and an ion collector. The entrance grid includes a first plurality of openings dimensioned to be less than a Debye length for the plasma. The ion collector is coupled to the entrance grid via a first voltage source. The selection grid is positioned between the entrance grid and the ion collector and is coupled to the entrance grid via a second voltage source. An ion current meter is coupled to the ion collector to measure an ion flux onto the ion collector and transmit a signal related thereto.
    Type: Grant
    Filed: March 28, 2012
    Date of Patent: September 30, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Lee Chen, Barton Lane, Merritt Funk, Jianping Zhao, Radha Sundararajan
  • Publication number: 20140273538
    Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may be configured to enable non-ambipolar diffusion to counter ion loss to the chamber wall. The plasma processing system may include a ring cavity coupled to the plasma processing system that is in fluid communication with plasma generated in the plasma processing system. The ring cavity may be coupled to a power source to form plasma that may diffuse ions into the plasma processing system to minimize the impact of ion loss to the chamber wall.
    Type: Application
    Filed: March 14, 2014
    Publication date: September 18, 2014
    Applicant: Tokyo Electron Limited
    Inventors: Lee Chen, Zhiying Chen, Jianping Zhao, Merritt Funk
  • Publication number: 20140263182
    Abstract: A method of selectively activating a chemical process using a DC pulse etcher. A processing chamber includes a substrate therein for chemical processing. The method includes coupling energy into a process gas within the processing chamber so as to produce a plasma containing positive ions. A pulsed DC bias is applied to the substrate, which is positioned on a substrate support within the processing chamber. Periodically, the substrate is biased between first and second bias levels, wherein the first bias level is more negative than the second bias level. When the substrate is biased to the first bias level, mono-energetic positive ions are attracted from plasma toward the substrate, the mono-energetic positive ions being selective so as to enhance a selected chemical etch process.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Lee Chen, Radha Sundararajan
  • Publication number: 20140262042
    Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.
    Type: Application
    Filed: March 11, 2014
    Publication date: September 18, 2014
    Inventors: Merritt Funk, Jianping Zhao, Lee Chen, Toshihiko Iwao, Toshihisa Nozawa, Zhiying Chen, Peter Ventzek
  • Publication number: 20140262041
    Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.
    Type: Application
    Filed: March 11, 2014
    Publication date: September 18, 2014
    Inventors: Merritt Funk, Jianping Zhao, Lee Chen, Toshihiko Iwao, Toshihisa Nozawa, Zhiying Chen, Peter Ventzek
  • Publication number: 20140265846
    Abstract: A method of treating a substrate with plasma is described. In particular, the method includes disposing a substrate in a plasma processing system, disposing a hollow cathode plasma source including at least one hollow cathode within the plasma processing system, and disposing a grid between the cathode outlet of the plurality of hollow cathodes and the substrate. The method further includes electrically coupling the grid to electrical ground, coupling a voltage to the at least one hollow cathode relative to electrical ground, and generating plasma in hollow cathode by ion-induced secondary electron emission of energetic electrons that move along a first trajectory, and diffusing lower energy electrons along a second trajectory across a first region of the interior space between the cathode outlet and the grid, through the grid, and into a second region of the interior space in fluid contact with the substrate.
    Type: Application
    Filed: March 13, 2014
    Publication date: September 18, 2014
    Inventors: Jianping Zhao, Lee Chen, Radha Sundararajan, Merritt Funk
  • Publication number: 20140262040
    Abstract: A plasma-tuning rod configured for use with a microwave processing system. The waveguide includes a first dielectric portion having a first outer diameter. A second dielectric portion, with a second outer diameter greater than the first outer diameter surrounds the first dielectric portion, and may be coaxial therewith. In some embodiments of the present invention, a dielectric constant of the first dielectric portion may be equal to or greater than a dielectric constant of the second dielectric portion.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Inventors: Jianping Zhao, Peter L. G. Ventzek, Lee Chen, Barton Lane, Merritt Funk, Radha Sundararajan, Iwao Toshihiko, Zhiying Chen