Patents by Inventor Lee Chung Lu

Lee Chung Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11030372
    Abstract: A method (of generating a layout diagram) includes generating a cell, representing at least part of a circuit in a semiconductor device, which is arranged at least in part according to second tracks of the M_2nd level (M_2nd tracks), and first tracks of the M_1st level (M_1st tracks). The generating the cell includes: selecting, based on a chosen site for the cell in the layout diagram, one of the M_2nd tracks; generating a first M_2nd pin pattern representing an output pin of the circuit; arranging a long axis of the first pin pattern substantially along the selected M_2nd track; generating second, third, fourth and fifth M_1st pin patterns representing corresponding input pins of the circuit; and arranging long axes of the second to fifth pin patterns substantially along corresponding ones of the M_1st tracks.
    Type: Grant
    Filed: October 21, 2019
    Date of Patent: June 8, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Pin-Dai Sue, Chin-Chou Liu, Sheng-Hsiung Chen, Fong-Yuan Chang, Lee-Chung Lu, Yen-Hung Lin, Li-Chun Tien, Po-Hsiang Huang, Yi-Kan Cheng, Chi-Yu Lu
  • Patent number: 11030366
    Abstract: A method includes: identifying ad hoc groups of elementary standard cells recurrent in a layout diagram; and selecting one group (selected group) of the recurrent ad hoc groups such that: the cells in the selected group have connections representing a corresponding logic circuit; each cell representing a logic gate; each ad hoc group has a number of transistors and a first number of logic gates; and the selected group providing a logical function. The method includes generating one or more macro standard cells such that: each macro standard cell has a number of transistors which is smaller than the number of transistors of a corresponding ad hoc group; or each macro standard cell has a second number of logic gates different than the first number of logic gates of the corresponding ad hoc group. The method also includes adding macro standard cells to the set of standard cells.
    Type: Grant
    Filed: May 12, 2020
    Date of Patent: June 8, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi-Lin Liu, Sheng-Hsiung Chen, Jerry Chang-Jui Kao, Fong-Yuan Chang, Lee-Chung Lu, Shang-Chih Hsieh, Wei-Hsiang Ma
  • Patent number: 11012057
    Abstract: A circuit includes a slave latch including a first input and an output, the first input being coupled to a master latch, and a retention latch including a second input coupled to the output. The master latch and the slave latch are configured to operate in a first power domain having a first power supply voltage level, the retention latch is configured to operate in a second power domain having a second power supply voltage level different from the first power supply voltage level, and the circuit further includes a level shifter configured to shift a signal level from one of the first power supply voltage level or the second power supply voltage level to the other of the first power supply voltage level or the second power supply voltage level.
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: May 18, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kai-Chi Huang, Jerry Chang Jui Kao, Chi-Lin Liu, Lee-Chung Lu, Shang-Chih Hsieh, Wei-Hsiang Ma, Yung-Chen Chien
  • Patent number: 11011545
    Abstract: A semiconductor device includes a plurality of standard cells. The plurality of standard cells include a first group of standard cells arranged in a first row extending in a row direction and a second group of standard cells arranged in a second row extending in the row direction. The first group of standard cells and the second group of standard cells are arranged in a column direction. A cell height of the first group of standard cells in the column direction is different from a cell height of the second group of standard cells in the column direction.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: May 18, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ta-Pen Guo, Lee-Chung Lu, Li-Chun Tien
  • Patent number: 11012073
    Abstract: A circuit includes a level shifter circuit, an output circuit and a feedback circuit. The level shifter circuit is coupled to a first voltage supply, and is configured to receive at least an enable signal, a first input signal or a second input signal. The level shifter circuit is configured to generate at least a first signal responsive to at least the enable signal or the first input signal. The output circuit is coupled to at least the level shifter circuit and the first voltage supply, is configured to receive the first signal, and to generate at least an output signal or a set of feedback signals responsive to the first signal. The feedback circuit is coupled to the level shifter circuit, the output circuit and the first voltage supply, and is configured to receive the enable signal, an inverted enable signal and the set of feedback signals.
    Type: Grant
    Filed: July 22, 2020
    Date of Patent: May 18, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yu-Lun Ou, Jerry Chang Jui Kao, Lee-Chung Lu, Ruei-Wun Sun, Shang-Chih Hsieh, Ji-Yung Lin, Wei-Hsiang Ma, Yung-Chen Chien
  • Publication number: 20210143150
    Abstract: An integrated circuit structure includes a first transistor, a second transistor, a first conductive via, a second conductive via, and a connection line. The first transistor includes a first active region, a first gate electrode over the first active region; and a first channel in the first active region and under the first gate electrode. The second transistor includes a second active region, a second gate electrode over the second active region, and a second channel in the second active region and under the second gate electrode. The first conductive via is electrically connected to the first gate electrode. The second conductive via is electrically connected to the second gate electrode. The connection line electrically connects the first and second conductive vias. The first transistor and the first conductive via and the second transistor and the second conductive via are arranged mirror-symmetrically with respect to a symmetry plane.
    Type: Application
    Filed: September 29, 2020
    Publication date: May 13, 2021
    Inventors: WEI-LING CHANG, LEE-CHUNG LU, XIANGDONG CHEN, KAM-TOU SIO, SANG-CHI HUANG
  • Patent number: 10998340
    Abstract: A semiconductor device includes a plurality of standard cells. The plurality of standard cells include a first group of standard cells arranged in a first row extending in a row direction and a second group of standard cells arranged in a second row extending in the row direction. The first group of standard cells and the second group of standard cells are arranged in a column direction. A cell height of the first group of standard cells in the column direction is different from a cell height of the second group of standard cells in the column direction.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: May 4, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ta-Pen Guo, Lee-Chung Lu, Li-Chun Tien
  • Patent number: 10971586
    Abstract: In at least one cell region, a semiconductor device includes fins and at least one overlying gate structure. The fins (dummy and active) are substantially parallel to a first direction. Each gate structure is substantially parallel to a second direction (which is substantially perpendicular to the first direction). First and second active fins have corresponding first and second conductivity types. Each cell region, relative to the second direction, includes: a first active region which includes a sequence of three or more consecutive first active fins located in a central portion of the cell region; a second active region which includes one or more second active fins located between the first active region and a first edge of the cell region; and a third active region which includes one or more second active fins located between the first active region and a second edge of the cell region.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: April 6, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jung-Chan Yang, Ting-Wei Chiang, Hui-Zhong Zhuang, Lee-Chung Lu, Li-Chun Tien
  • Patent number: 10970450
    Abstract: A semiconductor device comprising active areas and a structure. The active areas are formed as predetermined shapes on a substrate and arranged relative to a grid having first and second tracks which are substantially parallel to corresponding orthogonal first and second directions; The active areas are organized into instances of a first row having a first conductivity and a second row having a second conductivity. Each instance of the first row and of the second row includes a corresponding first and second number predetermined number of the first tracks. The structure has at least two contiguous rows including: at least one instance of the first row; and at least one instance of the second row. In the first direction, the instance(s) of the first row have a first width and the instance(s) of the second row a second width substantially different than the first width.
    Type: Grant
    Filed: October 12, 2017
    Date of Patent: April 6, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Fong-Yuan Chang, Jyun-Hao Chang, Sheng-Hsiung Chen, Ho Che Yu, Lee-Chung Lu, Ni-Wan Fan, Po-Hsiang Huang, Chi-Yu Lu, Jeo-Yen Lee
  • Publication number: 20210097225
    Abstract: An IC structure includes a first cell and a first and second rail. The first cell includes a first and second active region and a first, a second and a third gate structure. The first active region having a first dopant type. The second active region having a second dopant type. The first gate structure extending in a second direction, overlapping the first or the second active region. The second gate structure extending in the second direction, and overlapping a first edge of the first or second active region. The third gate structure extending in the second direction, and overlapping at least a second edge of the first or second active region. The first rail extending in the first direction and overlapping a middle portion of the first active region. The second rail extending in the first direction and overlapping a middle portion of the second active region.
    Type: Application
    Filed: December 10, 2020
    Publication date: April 1, 2021
    Inventors: Hui-Zhong ZHUANG, Ting-Wei CHANG, Lee-Chung LU, Li-Chun TIEN, Shun Li CHEN
  • Patent number: 10964685
    Abstract: An integrated circuit includes a cell layer, a first metal layer, a first conductive via, and a second conductive via. The cell layer includes first and second cells, in which the first cell is separated from the second cell by a non-zero distance. The first metal layer includes a first conductive feature and a second conductive feature, the first conductive feature overlaps the first cell and does not overlap the second cell, and the second conductive feature overlaps the second cell and does not overlap the first cell, in which the first conductive feature is aligned with the second conductive feature along lengthwise directions of the first and second conductive features. The first conductive via interconnects the cell layer and the first conductive feature of the first metal layer. The second conductive via interconnects the cell layer and the second conductive feature of the first metal layer.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: March 30, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Fong-Yuan Chang, Kuo-Nan Yang, Chung-Hsing Wang, Lee-Chung Lu, Sheng-Fong Chen, Po-Hsiang Huang, Hiranmay Biswas, Sheng-Hsiung Chen, Aftab Alam Khan
  • Publication number: 20210082960
    Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.
    Type: Application
    Filed: November 24, 2020
    Publication date: March 18, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Fong-yuan Chang, Chun-Chen Chen, Po-Hsiang Huang, Lee-Chung Lu, Chung-Te Lin, Jerry Chang Jui Kao, Sheng-Hsiung Chen, Chin-Chou Liu
  • Patent number: 10943046
    Abstract: A semiconductor apparatus includes a first cell having a first interconnect structure and a second cell having a second interconnect structure. The semiconductor apparatus further includes a first plurality of conductive segments, wherein each conductive segment of the first plurality of conductive segments directly connects a first metal level of the first interconnect structure to a first metal level of the second interconnect structure. The semiconductor apparatus further includes a third cell having a third interconnect structure and a fourth cell having a fourth interconnect structure. The semiconductor apparatus further includes a second plurality of conductive segments, wherein each conductive segment of the second plurality of conductive segments directly connects a second metal level of the third interconnect structure to a second metal level of the fourth interconnect structure, and the second metal level is different from the first metal level.
    Type: Grant
    Filed: October 21, 2019
    Date of Patent: March 9, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Prasenjit Ray, Lee-Chung Lu, Meng-Kai Hsu, Wen-Hao Chen, Yuan-Te Hou
  • Publication number: 20210028108
    Abstract: An integrated circuit includes a cell that is between a substrate and a supply conductive line and that includes a source region, a contact conductive line, a power conductive line, and a power via. The contact conductive line extends from the source region. The power conductive line is coupled to the contact conductive line. The power via interconnects the supply conductive line and the power conductive line.
    Type: Application
    Filed: October 8, 2020
    Publication date: January 28, 2021
    Inventors: Sheng-Hsiung Chen, Chung-Hsing Wang, Fong-yuan Chang, Lee-Chung Lu, Li-Chun Tien, Po-Hsiang Huang, Shao-huan Wang, Ting Yu Chen, Yen-Pin Chen, Chun-Chen Chen, Tzu-Hen Lin, Tai-Yu Cheng
  • Patent number: 10903239
    Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: January 26, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Fong-yuan Chang, Chun-Chen Chen, Po-Hsiang Huang, Lee-Chung Lu, Chung-Te Lin, Jerry Chang Jui Kao, Sheng-Hsiung Chen, Chin-Chou Liu
  • Publication number: 20200402968
    Abstract: A semiconductor device includes first cell rows and second cell rows. The first cell rows extend in a first direction. Each of the first cell rows has a first row height. The second cell rows extend in the first direction. Each of the second cell rows has a second row height. The first row height is greater than the second row height. The first cell rows and the second cell rows are interlaced in a periodic sequence. A first row quantity of the first cell rows in the periodic sequence is greater than a second row quantity of the second cell rows in the periodic sequence.
    Type: Application
    Filed: April 22, 2020
    Publication date: December 24, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hui-Zhong ZHUANG, Xiang-Dong CHEN, Lee-Chung LU, Tzu-Ying LIN, Yung-Chin HOU
  • Patent number: 10867114
    Abstract: An integrated circuit (IC) structure includes a first active region, a second active region, a first multi-gate structure, a first rail and a second rail. The first active region and the second active region extend in a first direction and are located at a first level. The second active region is separated from the first active region in a second direction. The first multi-gate structure extends in the second direction, overlaps the first active region and the second active region, and is located at a second level different from the first level. The first rail extends in the first direction, overlaps a portion of the first active region, supplies a first supply voltage, and is located at a third level. The second rail extends in the first direction, is located at the third level, is separated from the first rail in the second direction, and supplies a second supply voltage.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hui-Zhong Zhuang, Ting-Wei Chiang, Lee-Chung Lu, Li-Chun Tien, Shun Li Chen
  • Publication number: 20200350916
    Abstract: A circuit includes a level shifter circuit, an output circuit and a feedback circuit. The level shifter circuit is coupled to a first voltage supply, and is configured to receive at least an enable signal, a first input signal or a second input signal. The level shifter circuit is configured to generate at least a first signal responsive to at least the enable signal or the first input signal. The output circuit is coupled to at least the level shifter circuit and the first voltage supply, is configured to receive the first signal, and to generate at least an output signal or a set of feedback signals responsive to the first signal. The feedback circuit is coupled to the level shifter circuit, the output circuit and the first voltage supply, and is configured to receive the enable signal, an inverted enable signal and the set of feedback signals.
    Type: Application
    Filed: July 22, 2020
    Publication date: November 5, 2020
    Inventors: Yu-Lun OU, Jerry Chang Jui KAO, Lee-Chung LU, Ruei-Wun SUN, Shang-Chih HSIEH, Ji-Yung LIN, Wei-Hsiang MA, Yung-Chen CHIEN
  • Publication number: 20200350307
    Abstract: A method of generating a layout diagram of an IC cell includes defining a boundary recess in a boundary of the cell by extending a first portion of the boundary along a first gate track, extending a second portion of the boundary from the first gate track to a second gate track, the second portion being contiguous with the first portion, and extending a third portion of the boundary from the first gate track to the second gate track, the third portion being contiguous with the first portion An active region is positioned in the cell by extending the active region across a third gate track, wherein the first gate track is between the second gate track and the third gate track. The layout diagram is stored on a non-transitory computer-readable medium.
    Type: Application
    Filed: July 22, 2020
    Publication date: November 5, 2020
    Inventors: Chien-Ying CHEN, Lee-Chung LU, Li-Chun TIEN, Ta-Pen GUO
  • Publication number: 20200328212
    Abstract: A semiconductor device having a standard cell, includes a first power supply line, a second power supply line, a first gate-all-around field effect transistor (GAA FET) disposed over a substrate, and a second GAA FET disposed above the first GAA FET. The first power supply line and the second power supply line are located at vertically different levels from each other.
    Type: Application
    Filed: February 21, 2020
    Publication date: October 15, 2020
    Inventors: Guo-Huei WU, Jerry Chang Jui KAO, Chih-Liang CHEN, Hui-Zhong ZHUANG, Jung-Chan YANG, Lee-Chung LU, Xiangdong CHEN