Abstract: A semiconductor device having a standard cell, includes a first power supply line, a second power supply line, a first gate-all-around field effect transistor (GAA FET) disposed over a substrate, and a second GAA FET disposed above the first GAA FET. The first power supply line and the second power supply line are located at vertically different levels from each other.

Abstract: A flip-flop circuit includes a first latch, a second latch and a trigger circuit. The first latch is configured to set a first output signal based on at least a first input signal and a clock signal. The second latch is configured to set a second output signal based on a second input signal and the clock signal. The trigger circuit is coupled with the first latch and the second latch. The trigger circuit is configured to generate the second input signal based on at least the second output signal. The trigger circuit is configured to cause the second input signal to have a first voltage swing or a second voltage swing based on the first output signal and the second output signal. The first voltage swing is different from the second voltage swing.

Abstract: A method includes positioning adjacent first through fourth active regions in a cell of an IC layout diagram, the first active region being a first type of an n-type or a p-type and corresponding to a first total number of fins, the second active region being a second type of the n-type or the p-type and corresponding to a second total number of fins, the third active region being the second type and corresponding to a third total number of fins, and the fourth active region being the first type and corresponding to a fourth total number of fins. Each of the first and second total numbers of fins is greater than each of the third and fourth total numbers of fins, and at least one of the positioning the first, second, third, or fourth active regions is performed by a processor.

Abstract: An integrated circuit includes a flip-flop circuit and a gating circuit. The flip-flop circuit is arranged to receive an input data for generating a master signal during a writing mode according to a first clock signal and a second clock signal, and to output an output data according to the first clock signal and the second clock signal during a storing mode. The gating circuit is arranged for generating the first clock signal and the second clock signal according to the master signal and an input clock signal. When the input clock signal is at a signal level, the first clock signal and the second clock signal are at different logic levels. When the input clock signal is at another signal level, the first clock signal and the second clock signal are at a same logic level determined according to a signal level of the master signal.

Abstract: In some embodiments, a flip-flop is disposed as an integrated circuit layout on a flip-flop region of a semiconductor substrate. The flip-flop includes a first clock inverter circuit that resides within the flip-flop region, and a second clock inverter circuit residing within the flip-flop region. The first clock inverter circuit and the second clock inverter circuit are disposed on a first line. Master switch circuitry is made up of a first plurality of devices which are circumscribed by a master switch perimeter that resides within the flip-flop region of the integrated circuit layout. The master switch circuitry and the first clock inverter circuit are disposed on a second line perpendicular to the first line. Slave switch circuitry is operably coupled to an output of the master switch circuitry. The slave switch circuitry is made up of a third plurality of devices that are circumscribed by a slave switch perimeter.

Abstract: A logic circuit including first and second inverters, first and second NAND circuits, a transmission gate, and a transmission-gate-substitute (TGS) circuit, and wherein: for each of the first and second NAND circuits, a first input is configured to receive corresponding first and second data signals, and a second input is configured to receive an enable signal; the first inverter is configured to receive an output of the first NAND circuit; the transmission gate and the TGS circuit are arranged as a combination circuit which is configured to receive an output of the second NAND circuit as a data input, and outputs of the first inverter and the second NAND circuit as control inputs; the second inverter is configured to receive an output of the combination circuit; and an output of the second inverter represents one of an enable XOR (EXOR) function or an enable XNR (EXNR) function.

Abstract: A method of manufacturing a semiconductor device includes forming a transistor layer with an M*1st layer that overlays the transistor layer with one or more first conductors that extend in a first direction. Forming an M*2nd layer that overlays the M*1st layer with one or more second conductors which extend in a second direction. Forming a first pin in the M*2nd layer representing an output pin of a cell region. Forming a long axis of the first pin substantially along a selected one of the one or more second conductors. Forming a majority of the total number of pins in the M*1st layer, the forming including: forming second, third, fourth and fifth pins in the M*1st layer representing corresponding input pins of the circuit; and forming long axes of the second to fifth pins substantially along corresponding ones of the one or more first conductors.

Abstract: A method (of generating a layout diagram) includes: generating one or more first conductive patterns representing corresponding conductive material in the first metallization layer, long axes of the first conductive patterns extending substantially in a first direction; generating a first deep via pattern representing corresponding conductive material in each of the second via layer, the first metallization layer, and the first via layer; relative to the first direction and a second direction substantially perpendicular to the first direction, aligning the first deep via pattern to overlap a corresponding component pattern representing conductive material included in an electrical path of a terminal of a corresponding transistor in the transistor layer; and configuring a size of the first deep via pattern in the first direction to be substantially less than a permissible minimum length of a conductive pattern in the first metallization layer.

Abstract: In at least one cell region, a semiconductor device includes fin patterns and at least one overlying gate structure. The fin patterns (dummy and active) are substantially parallel to a first direction. Each gate structure is substantially parallel to a second direction (which is substantially perpendicular to the first direction). First and second active fin patterns have corresponding first and second conductivity types. Each cell region, relative to the second direction, includes: a first active region which includes a sequence of three or more consecutive first active fin patterns located in a central portion of the cell region; a second active region which includes one or more second active fin patterns located between the first active region and a first edge of the cell region; and a third active region which includes one or more second active fin patterns located between the first active region and a second edge of the cell region.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a first standard cell; and a second standard cell; wherein a cell width of the first standard cell along a first direction is substantially the same as a cell width of the second standard cell along the first direction, and a cell height of the first standard cell along a second direction perpendicular to the first direction is substantially greater than a cell height of the second standard cell along the second direction.

Abstract: A method includes positioning adjacent first through fourth active regions in a cell of an IC layout diagram, the first active region being a first type of an n-type or a p-type and corresponding to a first total number of fins, the second active region being a second type of the n-type or the p-type and corresponding to a second total number of fins, the third active region being the second type and corresponding to a third total number of fins, and the fourth active region being the first type and corresponding to a fourth total number of fins. Each of the first and second total numbers of fins is greater than each of the third and fourth total numbers of fins, and at least one of the positioning the first, second, third, or fourth active regions is performed by a processor.

Abstract: A circuit includes a level shifter circuit, an output circuit, an enable circuit, a first and a second feedback circuit. The level shifter circuit is coupled to a first voltage supply, and is configured to generate at least a first and a second signal responsive to at least the first enable signal or the first input signal. The output circuit is coupled to at least the level shifter circuit and the first voltage supply, and configured to receive the first and the second signal. The enable circuit is configured to generate a second enable signal responsive to the first enable signal. The first feedback circuit is configured to receive the first enable signal, the second enable signal and the first feedback signal. The second feedback circuit is configured to receive the first enable signal, the second enable signal and the second feedback signal.

Abstract: A circuit includes first and second power domains. The first power domain has a first power supply voltage level and includes a master latch, a first level shifter, and a slave latch coupled between the master latch and the first level shifter. The second power domain has a second power supply voltage level different from the first power supply voltage level and includes a retention latch coupled between the slave latch and the first level shifter, and the retention latch includes a second level shifter.

Abstract: The present disclosure describes an example method for routing a standard cell with multiple pins. The method can include modifying a dimension of a pin of the standard cell, where the pin is spaced at an increased distance from a boundary of the standard cell than an original position of the pin. The method also includes routing an interconnect from the pin to a via placed on a pin track located between the pin and the boundary and inserting a keep out area between the interconnect and a pin from an adjacent standard cell. The method further includes verifying that the keep out area separates the interconnect from the pin from the adjacent standard cell by at least a predetermined distance.

Abstract: A semiconductor device includes a plurality of standard cells. The plurality of standard cells include a first group of standard cells arranged in a first row extending in a row direction and a second group of standard cells arranged in a second row extending in the row direction. The first group of standard cells and the second group of standard cells are arranged in a column direction. A cell height of the first group of standard cells in the column direction is different from a cell height of the second group of standard cells in the column direction.

Abstract: A semiconductor device includes active areas formed as predetermined shapes on a substrate. The device also includes a first structure having at least two contiguous rows including: at least one instance of the first row, and at least one instance of the second row. The device also includes the first structure being configured such that: each of the at least one instance of the first row in the first structure having a first width in the first direction; and each of the at least one instance of the second row in the first structure having a second width in the first direction, the second width being substantially different than the first width. The device also includes a second structure having an odd number of contiguous rows including: an even number of instances of the first row, and an odd number of instances of the second row.

Abstract: An integrated circuit includes: a flip-flop circuit arranged to receive an input data for generating a master signal during a writing mode according to a first clock signal and a second clock signal, and to output an output data according to the first clock signal and the second clock signal during a storing mode; and a gating circuit coupled to the flip-flop circuit, for generating the first clock signal and the second clock signal according to the master signal and an input clock signal; wherein a first signal transition number of the first clock signal and a second signal transition number of the second clock signal are not greater than a third signal transition number of the input clock signal during the writing mode and the storing mode.

Abstract: A method includes forming a cell layer including first and second cells, each of which is configured to perform a circuit function; forming a first metal layer above the cell layer and including a first conductive feature and a second conductive feature extending along a first direction, in which the first conductive feature extends from the first cell into the second cell, and in which a shortest distance between a center line of the first conductive feature and a center line of the second conductive feature along a second direction is less than a width of the first conductive feature, and the second direction is perpendicular to the first direction; forming a first conductive via interconnecting the cell layer and the conductive feature.

Abstract: A semiconductor device having a standard cell, includes a first power supply line, a second power supply line, a first gate-all-around field effect transistor (GAA FET) disposed over a substrate, and a second GAA FET disposed above the first GAA FET. The first power supply line and the second power supply line are located at vertically different levels from each other.

Abstract: In some embodiments, a flip-flop is disposed as an integrated circuit layout on a flip-flop region of a semiconductor substrate. The flip-flop includes a first clock inverter circuit that resides within the flip-flop region, and a second clock inverter circuit residing within the flip-flop region. The first clock inverter circuit and the second clock inverter circuit are disposed on a first line. Master switch circuitry is made up of a first plurality of devices which are circumscribed by a master switch perimeter that resides within the flip-flop region of the integrated circuit layout. The master switch circuitry and the first clock inverter circuit are disposed on a second line perpendicular to the first line. Slave switch circuitry is operably coupled to an output of the master switch circuitry. The slave switch circuitry is made up of a third plurality of devices that are circumscribed by a slave switch perimeter.