Abstract: A device includes a single standard cell. The single standard cell includes a first transistor region including a first extended active region extending between a first side cell boundary and a second side cell boundary opposite the first side cell boundary, and includes a plurality of source regions and one drain region. The single standard cell further includes a second transistor region including a second extended active region extending between the first side cell boundary and the second side cell boundary, and includes a source region and a single drain region.

Abstract: An IC device includes first and second cells adjacent each other and over a substrate. The first cell includes a first IO pattern along a first track among a plurality of tracks in a first metal layer, the plurality of tracks elongated along a first axis and spaced from each other along a second axis. The second cell includes a plurality of conductive patterns along corresponding different tracks among the plurality of tracks in the first metal layer, each of the plurality of conductive patterns being an IO pattern of the second cell or a floating conductive pattern. The first metal layer further includes a first connecting pattern along the first track and connects the first IO pattern and a second IO pattern of the second cell. The second IO pattern is one of the plurality of conductive patterns of the second cell and is along the first track.

Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.

Abstract: An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure.

Abstract: An integrated circuit includes a first-voltage power rail and a second-voltage power rail in a first connection layer, and includes a first-voltage underlayer power rail and a second-voltage underlayer power rail below the first connection layer. Each of the first-voltage and second-voltage power rails extends in a second direction that is perpendicular to a first direction. Each of the first-voltage and second-voltage underlayer power rails extends in the first direction. The integrated circuit includes a first via-connector connecting the first-voltage power rail with the first-voltage underlayer power rail, and a second via-connector connecting the second-voltage power rail with the second-voltage underlayer power rail.

Abstract: A method of fabricating an integrated circuit structure includes placing a first set of conductive structure layout patterns on a first layout level, placing a second set of conductive structure layout patterns on a second layout level, placing a first set of via layout patterns between the second set of conductive structure layout patterns and the first set of conductive structure layout patterns, and manufacturing the integrated circuit structure based on at least one of the layout patterns of the integrated circuit. At least one of the layout patterns is stored on a non-transitory computer-readable medium, and at least one of the placing operations is performed by a hardware processor. The first set of conductive structure layout patterns extends in a first direction. The second set of conductive structure layout patterns extends in the second direction, and overlap the first set of conductive structure layout patterns.

Abstract: A method (of manufacturing a semiconductor device) includes: forming via structures in a first via layer over a transistor layer; forming a first via structure of a first deep via arrangement in the first via layer; forming conductive segments in a first metallization layer over the first via layer; forming M_1st routing segments at least a majority of which, relative to a first direction, have corresponding long axes with lengths which at least equal if not exceed a first permissible minimum value for routing segments in the first metallization layer; forming an M_1st interconnection segment having a long axis which is less than the first permissible minimum value and which is included in the first deep via arrangement; and forming via structures in a second via layer over the first metallization layer, including forming a first via structure of the first deep via arrangement in the second via layer.

Abstract: A method of manufacturing a semiconductor device includes forming a transistor layer with an M*1st layer that overlays the transistor layer with one or more first conductors that extend in a first direction. Forming an M*2nd layer that overlays the M*1st layer with one or more second conductors which extend in a second direction. Forming a first pin in the M*2nd layer representing an output pin of a cell region. Forming a long axis of the first pin substantially along a selected one of the one or more second conductors. Forming a majority of the total number of pins in the M*1st layer, the forming including: forming second, third, fourth and fifth pins in the M*1st layer representing corresponding input pins of the circuit; and forming long axes of the second to fifth pins substantially along corresponding ones of the one or more first conductors.

Abstract: A memory macro structure includes a first memory array, a second memory array, a cell activation circuit coupled to the first and second memory arrays and positioned between the first and second memory arrays, a control circuit coupled to the cell activation circuit and positioned adjacent to the cell activation circuit, and a through-silicon via (TSV) extending through one of the cell activation circuit or the control circuit.

Abstract: A method includes forming a cell layer including first and second cells, each of which is configured to perform a circuit function; forming a first metal layer above the cell layer and including a first conductive feature and a second conductive feature extending along a first direction, in which the first conductive feature extends from the first cell into the second cell, and in which a shortest distance between a center line of the first conductive feature and a center line of the second conductive feature along a second direction is less than a width of the first conductive feature, and the second direction is perpendicular to the first direction; forming a first conductive via interconnecting the cell layer and the conductive feature.

Abstract: A semiconductor package includes a first package component comprising: a first semiconductor die; a first encapsulant around the first semiconductor die; and a first redistribution structure electrically connected to the semiconductor die. The semiconductor package further includes a second package component bonded to the first package component, wherein the second package component comprises a second semiconductor die; a heat spreader between the first semiconductor die and the second package component; and a second encapsulant between the first package component and the second package component, wherein the second encapsulant has a lower thermal conductivity than the heat spreader.

Abstract: A method of fabricating an integrated circuit includes placing a first set of conductive feature patterns on a first level, placing a second set of conductive feature patterns on a second level, placing a first set of via patterns between the second set of conductive feature patterns and the first set of conductive feature patterns, placing a third set of conductive feature patterns on a third level different from the first level and the second level, placing a second set of via patterns between the third set of conductive feature patterns and the second set of conductive feature patterns, and manufacturing the integrated circuit based on at least one of the above patterns of the integrated circuit.

Abstract: A method includes disposing a first power rail, a second power rail and a third power rail arranged in order; disposing a first cell row having a first row height between the first power rail and the second power rail; and disposing a second cell row having the first row height between the third power rail and the second power rail. Each of the first power rail and the third power rail has a first width, and the second power rail has a second width larger than the first width.

Abstract: An integrated circuit includes a flip-flop circuit and a gating circuit. The flip-flop circuit is arranged to receive an input data for generating a master signal during a writing mode according to a first clock signal and a second clock signal, and to output an output data according to the first clock signal and the second clock signal during a storing mode. The gating circuit is arranged for generating the first clock signal and the second clock signal according to the master signal and an input clock signal. When the input clock signal is at a signal level, the first clock signal and the second clock signal are at different logic levels. When the input clock signal is at another signal level, the first clock signal and the second clock signal are at a same logic level determined according to a signal level of the master signal.

Abstract: An integrated circuit includes a cell that is between a substrate and a supply conductive line and that includes a source region, a contact conductive line, a power conductive line, and a power via. The contact conductive line extends from the source region. The power conductive line is coupled to the contact conductive line. The power via interconnects the supply conductive line and the power conductive line.

Abstract: A circuit includes first and second power nodes having differing first and second voltage levels, and a reference node having a reference voltage level. A master latch outputs a first data bit based on a received data bit; a slave latch includes a first inverter that outputs a second data bit based on the first data bit and a second inverter that outputs an output data bit based on a selected one of the first data bit or a third data bit; a level shifter outputs the third data bit based on a fourth data bit; and a retention latch outputs the fourth data bit based on the second data bit. The first and second inverters and the level shifter are coupled between the first power node and the reference node, and the retention latch includes a plurality of transistors coupled between the second power node and the reference node.

Abstract: A method (of generating a layout diagram, the layout diagram being stored on a non-transitory computer-readable medium) includes: selecting first and second standard cells from a standard-cell-library; the first and second standard cells having corresponding first and second heights that are different from each other; stacking the first standard cell on the second standard cell to form a third cell; and including the third cell in a layout diagram. At least one aspect of the method is executed by a processor of a computer.

Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.

Abstract: A circuit includes an input circuit, a level shifter circuit, an output circuit, and a first and a second feedback circuit. The input circuit is coupled to a first voltage supply, and configured to receive a first input signal, and to generate at least a second input signal. The level shifter circuit is coupled to a second voltage supply, and configured to generate at least a first and second signal responsive to at least the enable signal or the first input signal. The output circuit is coupled to at least the level shifter circuit and the second voltage supply, and configured to generate at least an output signal, a first and second feedback signal responsive to the first signal. The first and second feedback circuit are configured to receive the enable signal, and the inverted enable signal, and the corresponding first and second feedback signal.

Abstract: A set of masks corresponds to an integrated circuit layout. The integrated circuit layout includes a first cell having a first transistor region and a second transistor region, and a second cell having a third transistor region and a fourth transistor region. The first cell and the second cell adjoin each other at side cell boundaries thereof, the first transistor region and the third transistor region are formed in a first continuous active region, and the second transistor region and the fourth transistor region are formed in a second continuous active region. The set of masks is formed based on the integrated circuit layout.