Abstract: A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a sacrificial material is used to occupy a closed interior volume in a semiconductor structure is disclosed. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, in one embodiment by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the sacrificial material. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween.

Abstract: A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a sacrificial material is used to occupy a closed interior volume in a semiconductor structure is disclosed. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, in one embodiment by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the sacrificial material. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween. Also disclosed are methods of forming multi-level air gaps and methods or forming over-coated conductive lines or leads wherein a portion of the overcoating is in contact with at least one air gap.

Abstract: A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a sacrificial material is used to occupy a closed interior volume in a semiconductor structure is disclosed. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, in one embodiment by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the sacrificial material. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween.

Abstract: A clean air cabinet includes a blower chamber and a sample chamber separated by a filter. A blower within the blower chamber forces air through the filter into the sample chamber. A perforated wall between the sample chamber and the filter provides a pressurized zone between the wall and the filter. An exhaust plenum connects the pressurized zone with an exterior of the cabinet. A cap is provided to close off the plenum when the blower is not operating.

Abstract: The present invention relates to methods of inhibiting HIV-mediated cell killing which comprises inhibiting the interaction between the CS3 region and viral gp41 and its receptor on the surface of lymphocytes. The invention provides for methods which employ peptides, peptide derivatives, or antibodies to inhibit the CS3/CS3 receptor interaction. In addition, the invention also relates to the CS3 receptor.The present invention is based in part on the discovery that a CS3 specific cellular receptor is widely distributed on human lymphocytes and forms a 108 kd complex with CS3-HSA peptide conjugate. It was further discovered that CS3 peptide effectively blocks HIV mediated cell infection and killing. Therefore, the present invention provides for methods of treatment and prophylaxis of HIV infection as well as a means for better understanding the physiology of acquired immunodeficiency syndrome (AIDS).