Abstract: This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The polishing pads of the present invention are formed by sintering or a combination of sintering and molding (including reaction injection molding). The polishing pads of the present invention are made of an advantageous hydrophilic polishing material and have a surface topography and texture which improves their polishing performance.

Abstract: Polishing pads are provided having a polishing surface formed from a hydrophilic material. The polishing surface has a topography produced by a thermoforming process. The topography consists of large and small features that facilitate the flow of polishing fluid and facilitate smoothing and planarizing.

Abstract: A method is provided for the fabrication of a porous polymeric material by electrophoretic deposition. The porous polymeric material is particularly well suited as a polishing surface for the planarization of semiconductor wafers.

Abstract: An apparatus and method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of nanoasperities which are particles having an imputed radius (of curvature) of about 0.5 to about 0.1 microns and sufficient resiliency to permanently deform by less than 10% which contact the wafer surface in combination with a reactive liquid solution.

Abstract: A polishing pad having a uniform, continuously interconnected porous surface. The pad is produced by pressure sintering powder compacts of thermoplastic polymer at a temperature above the glass transition temperature but not exceeding the melting point of the polymer. The sintering process is conducted at a pressure in excess of 100 psi and in a mold having the desired final pad dimensions. In a preferred version, a mixture of two polymer powders is used, where one polymer has a lower melting point than the other.

Abstract: A method is provided for polishing a composite comprised of silica and silicon nitride wherein a polishing composition is used comprising: an aqueous medium, abrasive particles, a surfactant, an organic polymer viscosity modifier which increases the viscosity of the composition, and a compound which complexes with the silica and silicon nitride wherein the complexing agent has two or more functional groups each having a dissociable proton, the functional groups being the same or different.

Abstract: This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The pads of the present invention have an advantageous hydrophilic polishing material and have an innovative surface topography and texture which generally improves predictability and polishing performance.

Abstract: An apparatus and method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of nanoasperities which are particles having an imputed radius (of curvature) of about 0.5 to about 0.1 microns and sufficient resiliency to permanently deform by less than 10% which contact the wafer surface in combination with a reactive liquid solution.

Abstract: An innovative method of manufacturing polishing pads using photo-curing polymers and photolithography. The photolithography enables the creation of useful surface patterns not possible with conventional machining techniques and enables the use of pad materials otherwise too soft to pattern by conventional machining techniques.

Abstract: A composition is provided for polishing a composite comprised of silica and silicon nitride comprising: an aqueous medium, abrasive particles, a surfactant, and a compound which complexes with the silica and silicon nitride wherein the complexing agent has two or more functional groups each having a dissociable proton, the functional groups being the same or different.

Abstract: A polishing pad having a substantially uniform, continuously interconnected porous surface. The pad can be produced by pressure sintering powder compacts of thermoplastic polymer at a temperature above the glass transition temperature but not exceeding the melting point of the polymer. The sintering process is conducted in a mold at a pressure in excess of 100 psi (0.07 MPa). In a preferred version, a mixture of two polymer powders is used, where one polymer has a lower melting point than the other.

Abstract: Water based polishing slurries, comprising oxide polishing particles. The polishing slurries comprise an innovative (multi-modal) particle distribution for improved polishing performance.

Abstract: A method is provided for photochemical polishing of a silicon wafer using electromagnetic waves within the spectrum of 150 to 2000 nanometers wavelength. A photochemical polishing apparatus is also disclosed in which the electromagnetic waves are provided by a waveguide in close proximity to the surface of a silicon wafer electrode.

Abstract: A composition is provided for polishing a composite comprised of silica and silicon nitride comprising: an aqueous medium, abrasive particles, a surfactant, and a compound which complexes with the silica and silicon nitride wherein the complexing agent has two or more functional groups each having a dissociable proton, the functional groups being the same or different.

Abstract: An innovative method of manufacturing polishing pads using photocuring polymers and photolithography. The photolithography enables the creation of useful surface patterns not possible with conventional machining techniques and enables the use of pad materials otherwise too soft to pattern by conventional machining techniques.

Abstract: An apparatus and method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of nanoasperities which contact the wafer surface in combination with a reactive liquid solution free from particulate matter.

Abstract: A chemical-mechanical polishing system which is particularly well suited for use in the manufacture of semiconductor devices or the like. The invention is directed to a self-dressing, hydrophilic polishing pad capable of releasing particles during polishing. Such a pad design is very efficient in providing polishing particles over the entire polishing surface interface. Since the polishing pad produces polishing particles, the polishing fluid can comprise very low loadings of polishing particles, if any.

Abstract: This invention describes improved polishing pads useful in the manufacture of semiconductor devices or the like. The pads of the present invention have an advantageous hydrophilic polishing material and have an innovative surface topography and texture which generally improves predictability and polishing performance.

Abstract: This invention provides polishing pad tiles which, by virtue of their geometry and surface features, can be arranged to form mosaic pads having channels at the seams which facilitate the flow of polishing fluid during polishing of a workpiece.

Abstract: Polymer-based pads useful for polishing objects, particularly integrated circuits, having interconnected porosity which is uniform in all directions, and where the solid portion of said pad consists of a uniform continuously interconnected polymer material of greater than 50% of the gross volume of the article, are produced directly to final shape and dimension by pressure sintering powder compacts of thermoplastic polymer at a temperature above the glass transition temperature but not exceeding the melting point of the polymer and at a pressure in excess of 100 psi in a mold having the desired final pad dimensions. In a preferred version, a mixture of two polymer powders is used, where one polymer has a lower melting point than the other. When pressure sintered at a temperature not to exceed the melting point of the lower melting powder, the increased stiffness afforded by incorporation of the higher melting polymer component gives improved mechanical strength to the sintered product.