Abstract: A process is provided for polishing a composite comprised of an insulating layer, a metal and titanium in which the composite is polished in a standard polishing machine using an aqueous slurry comprising submicron abrasive particles, an iodate, and a peroxide. Another process is provided in which peroxide is added to the aqueous slurry only when a titanium or titanium nitride layer is being polished. Further the invention also comprises the addition of a base to the slurry stream exiting the polishing machine to bring the pH of the used slurry to about 7 or higher.

Abstract: An apparatus and method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of nanoasperities which contact the wafer surface in combination with a reactive liquid solution essentially free from particulate matter.

Abstract: An improved slurry composition and methods of using it are provided for final polishing of silicon wafers. The composition comprises water, submicron silica particles at about 0.02 to about 0.5 percent by weight of this composition, a salt at a concentration of about 100 to about 1000 ppm, an amine compound at a concentration sufficient to effect a composition pH of about 8 to about 11, and a polyelectrolyte dispersion agent at a concentration of about 20 to about 500 ppm, wherein the composition has a total sodium and potassium content below about 1 ppm and an iron, nickel and copper content each below about 0.1 ppm, all ppm being parts per million by weight of the composition.

Abstract: A composition is provided, which is suitable for polishing SiO.sub.2, silicates, and silicon nitride, comprising an aquesous slurry of submicron SiO.sub.2 particles and a soluble inorganic salt or combination of soluble inorganic salts of total solution concentration below the critical coagulation concentration for the slurry, wherein the slurry pH is adjusted to within the range of about 9 to 10 by addition of a soluble amine or mixture of soluble amines. Optionally, the compositions of this invention may also comprise a polyhydric alcohol.

Abstract: Aqueous slurries are provided, which are useful for the chemical-mechanical polishing of substrates comprising titanium, comprising: water, submicron abrasive particles, an oxidizing agent, and a mono-, di-, or tri-substituted phenol wherein at least one of the substituted functional groups is polar. Optionally the compositions may also comprise a compound to suppress the rate of removal of silica. The slurries are useful on substrates which also comprise tungsten, aluminum or copper.

Abstract: An aqueous slurry is provided which is useful for the chemical-mechanical polishing of substrates containing titanium comprising: water, submicron abrasive particles, an oxidizing agent, and a combination of complexing agents comprising a phthalate compound and a compound which is a di- or tri-carboxylic acid with at least one hydroxyl group in an alpha position relative to one of the carboxyl groups.

Abstract: A composition is provided for polishing a composite comprised of silica and silicon nitride comprising: an aqueous medium, abrasive particles, a surfactant, and a compound which complexes with the silica and silicon nitride wherein the complexing agent has has two or more functional groups each having a dissociable proton, the functional groups being the same or different.

Abstract: An aqueous slurry is provided for polishing or planarizing a work piece which contains a metal, the solids portion of said slurry being comprised of 1 to 50 percent by weight of submicron alpha-alumina, the remainder of the solids being of a substantially less abrasive composition chosen from the group consisting of aluminum hydroxides, gamma-alumina, delta-alumina, amorphous alumina, and amorphous silica. Also provided is a method for polishing the surface of a work piece which contains a metal wherein said aqueous slurry is used as the polishing composition during chemical-mechanical polishing.