Abstract: A display apparatus includes a display panel that includes a display element and a thin-film encapsulation layer disposed on the display element, and a polarization film disposed on the display panel and that includes a phase compensation layer, a phase retardation layer, and a polarization layer. A thickness direction phase difference of the display panel is less than or equal to about -35 nm.

Abstract: An antenna includes a first radiator having a first end and a second end, where the second end or a middle position of the first radiator is grounded; a second radiator having a third end and a fourth end, the fourth end is disposed away from the first end relative to the third end, and the second end or a middle position of the second radiator is grounded; a feeding circuit configured to feed the first radiator and the second radiator, at the first end of the first radiator and the third end of the second radiator; and a tuning circuit configured to selectively connect the feeding circuit to the first end of the first radiator or the third end of the second radiator to feed the first radiator or the second radiator.

Abstract: A method and system for medical imaging employs an excitation source configured to cause an object having a plurality of cells to at least one of emit, reflect, and fluoresce light. An optical receptor is employed that is configured to receive the light from the object. A filter assembly receives the light from the optical receptor and filters the light. An image processor having a field of view (FOV) substantially greater than a diameter of a cell of the object and an analysis resolution substantially matched to the diameter of a cell of the object that receives the filtered light from the filter and analyzes the filtered light corresponding to each cell in the FOV. A feedback system is provided that is configured to provide an indication of a state of each cell in the FOV and a location of a cell in the FOV meeting a predetermined condition.

Abstract: A hybrid pump includes an impeller, a magnetic drive configured to control rotation of the impeller, a drive shaft combined with the magnetic drive and a motor. The drive shaft rotates in response to rotation of an axis of the motor, the magnetic drive rotates when the drive shaft rotates, the impeller rotates in response to rotation of the magnetic drive, a drive body of the magnetic drive is formed of plastic, and the drive shaft is formed of metal.

Abstract: A method of managing teeth includes calculating tooth deterioration information of the user in a second measurement period based on a first tooth state numerical value of each of user's teeth in a first measurement period and a second tooth state numerical value of each of the user's teeth in the second measurement period after the first measurement period, and providing the tooth deterioration information to the user.

Abstract: An alloy powder preparation method according to an embodiment comprises the steps of: forming a mixture by mixing a plurality of metal compounds; and thermally treating the mixture, wherein, in the step of thermally treating the mixture, the process temperature changes according to the particle diameter of alloy powder. In addition, the step of thermally treating the mixture proceeds through hydrogen reduction at a process temperature of 300 to 700° C.

Abstract: Disclosed are methods and apparatuses for supporting BWP-based operations in sidelink communication. An operation method of a first terminal in a communication system may include receiving, from a base station, configuration information of a mapping relationship between an uplink (UL) bandwidth part (BWP) and a sidelink (SL) BWP; when a UL switching operation for the UL BWP is performed, performing an SL switching operation for the SL BWP mapped to the UL BWP based on the mapping relationship without separate signaling indicating execution of the SL switching operation; and performing sidelink communication with a second terminal in a switched SL BWP.

Abstract: A motorized skate includes a plurality of riding plates, a plurality of wheels, a plurality of motors, a plurality of communication devices, and a controller. The plurality of riding plates is configured to provide a space for a rider to ride the motorized skate. The plurality of wheels are attached to the riding plates. The plurality of motors are attached to the riding plates. The plurality of communication devices are attached to the riding plates. The controller is configured to control the riding plates by the communication devices attached to each of the riding plates, wherein the controller is configured to accelerate and decelerate the riding plates and maintain the riding plates operate at same speed.

Abstract: An embodiment cooling apparatus for a power module includes a manifold cover provided with an inner space that defines a flow path for a cooling fluid and in which the power module can be embedded, a fin plate embedded in the manifold cover so as to contact the power module and including a plurality of cooling fins on a surface facing an inner surface of the manifold cover, and a guide wall extending from the inner surface of the manifold cover in a flow direction of the cooling fluid to define a plurality of first channels having first closed ends and second channels having second closed ends, the guide wall overlapping the cooling fins and having an end portion in contact with the cooling fins to allow the cooling fluid to flow to the first channels and the second channels between the cooling fins in the manifold cover.

Abstract: A semiconductor device includes a plurality of fins on a substrate, a fin end spacer plug on an end surface of each of the plurality of fins and a fin liner layer, an insulating layer on the plurality of fins, and a source/drain epitaxial layer in a source/drain recess in each of the plurality of fins.

Abstract: A gamma voltage generator within a display device includes a plurality of gamma generation circuits that respectively generate a plurality of gamma voltages. At least one gamma generation circuit includes an input circuit configured to receive a first reference voltage and a second reference voltage, a reference voltage select circuit configured to select a reference voltage among the first reference voltage and the second reference voltage by comparing a gamma voltage generated by the at least one gamma generation circuit with the first reference voltage and the second reference voltage, a digital-to-analog conversion circuit configured to generate an analog voltage corresponding to a gamma code based on the reference voltage selected by the reference voltage select circuit, and an output circuit configured to output the gamma voltage based on the analog voltage.

Abstract: The present disclosure provides an etching solution, including an ionic strength enhancer having an ionic strength greater than 10?3 M in the etching solution, wherein the ionic strength enhancer includes Li+, Na+, K+, Mg2+, Ca2+, N(CH3)+, or N(C2H5)4+, a solvent, and an etchant.

Abstract: A semiconductor structure includes an active region including a source/drain feature, a contact protruding from a bottom surface of the source/drain feature, a first dielectric layer disposed directly below the active region and surrounding the contact, an air gap disposed between the contact and the first dielectric layer, and a seal disposed between the contact and the first dielectric layer, such that the air gap is disposed between the seal and the source/drain feature.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes providing a first layer having a first surface and a second layer having a second surface orthogonal to the first surface in a vertical direction, forming an inhibitor layer conformally on the first surface and the second surface, exposing the second surface by selectively removing the inhibitor layer on the second surface among the first surface and the second surface, the exposing of the second surface may include selectively removing an edge portion of the inhibitor layer on the first surface, the edge portion contacting the second surface, and forming an interest layer on the exposed second surface.

Abstract: An impact tool head is provided and configured to be disposed on a front end of an impact tool. The impact tool head includes: a rod body and a flange radially protruding from the rod body. The flange includes an inclined flat surface facing toward the front end and an outermost peripheral edge. A contact position is defined as a position where the inclined flat surface contact with at least one projection of the impact tool. Wherein each of the at least one projection is a ball member, and as viewed in the axial direction, a ratio of a distance between the contact position and the outermost peripheral edge to a radius of the at least one projection is between 0.1 and 0.6.

Abstract: Some embodiments relate to an integrated circuit (IC) disposed on a silicon substrate, which includes a well region having a first conductivity type. An epitaxial pillar of SiGe or Ge extends upward from the well region. The epitaxial pillar includes a lower epitaxial region having the first conductivity type and an upper epitaxial region having a second conductivity type, which is opposite the first conductivity type. A dielectric layer is arranged over an upper surface of the substrate and is disposed around the lower epitaxial region to extend over outer edges of the well region. The dielectric layer has inner sidewalls that contact outer sidewalls of the epitaxial pillar. A dielectric sidewall structure has a bottom surface that rests on an upper surface of the dielectric layer and has inner sidewalls that extend continuously from the upper surface of the dielectric layer to a top surface of the epitaxial pillar.

Abstract: A center tube and a central fluid supply tube combination includes a center tube body defining a longitudinal length, and a central reservoir. The center tube also includes an apertured annular wall extending axially the majority of the longitudinal length, and a first annular solid wall extending axially from the apertured annular wall. A central fluid supply tube is disposed in the central reservoir, and includes a second annular solid wall that is radially surrounded by the apertured annular wall of the center tube. The second annular solid wall defines a supply passage with a fully circular flow flux.

Abstract: A water level measurement system according to an embodiment of the present invention includes a support pipe installed in a water tank filled with a fluid to measure a water level and extending in a depth direction of the water tank, a support rod disposed in an inner space of the support pipe and extending in the depth direction of the water tank, a plurality of ultrasonic probes attached to the support rod and generating ultrasonic waves, and a water level calculator connected to the plurality of ultrasonic probes and calculating the water level in the water tank, wherein the water level calculator calculates the water level of the water tank by using an order of the ultrasonic probes disposed at a highest position among the plurality of ultrasonic probes that detect a signal of a reflected wave reflected from the support pipe.

Abstract: The present invention relates to an organic compound represented by Chemical Formula 1, a composition, an organic optoelectronic device, and a display device.

Abstract: A semiconductor device includes a semiconductor substrate and an interconnection structure. The interconnection structure is disposed over the semiconductor substrate. The interconnection structure includes first conductive lines, second conductive lines, and ovonic threshold switches. The first conductive lines extend parallel to each other in a first direction. The second conductive lines are stacked over the first conductive lines and extend parallel to each other in a second direction perpendicular to the first direction. The ovonic threshold switches are disposed between the first conductive lines and the second conductive lines. The ovonic threshold switches include a ternary GeCTe material. The ternary GeCTe material consists substantially of carbon, germanium, and tellurium. In the ternary GeCTe material, a content of carbon is in a range from 10 to 30 atomic percent and a content of germanium is in a range from 10 to 65 atomic percent.