Patents by Inventor Lei Pan

Lei Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20260351870
    Abstract: A terminal includes: an electrical contact part which is used to make electrical contact with a mating terminal; and an electrical connection part which is used for electrical connection with an aluminum cable. The electrical contact part and the electrical connection part are connected as a whole, the electrical contact part is a copper component or a copper alloy component, and the electrical connection part is an aluminum component or an aluminum alloy component. The electrical contact part may be made of copper or copper alloy and an electrical connection part made of aluminum or aluminum alloy. The copper or copper alloy electrical contact part can reliably and stably make electrical contact with a mating terminal, while the aluminum or aluminum alloy electrical connection part can reliably and stably connect with an aluminum cable, effectively avoiding electrochemical corrosion problem between the copper terminal and the aluminum cable.
    Type: Application
    Filed: April 28, 2026
    Publication date: November 5, 2026
    Applicants: Tyco Electronics (Suzhou) Ltd., Tyco Electronics (Shanghai) Co., Ltd., TE Connectivity (Nantong) Co., Ltd.
    Inventors: Minjie ZHU, Jingjing GU, Lei PAN, Daiqiong ZHANG, Wei HE
  • Publication number: 20260333865
    Abstract: An integrated circuit structure includes a first active region and a second active region in a substrate. A first enclosed isolation region is enclosed within the first active region, and a second enclosed isolation region is enclosed within the second active region. A first common drain region is shared by a first transistor and a second transistor on the first active region and borders a lower side of the first enclosed isolation region from a top view. A second common drain region is shared by a third transistor and a fourth transistor on the second active region and borders an upper side of the second enclosed isolation region from the top view. A gate structure extends across the first active region and the second active region and serves as a common gate shared by the first transistor and the third transistor.
    Type: Application
    Filed: July 2, 2026
    Publication date: October 22, 2026
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., TSMC NANJING COMPANY LIMITED, TSMC CHINA COMPANY LIMITED
    Inventors: Tian-Yu XIE, Xin-Yong WANG, Lei PAN, Kuo-Ji CHEN
  • Patent number: 12765153
    Abstract: Disclosed herein are charge or electricity generating devices and methods of making and use thereof.
    Type: Grant
    Filed: December 16, 2024
    Date of Patent: October 13, 2026
    Assignee: Ohio State Innovation Foundation
    Inventors: Lei Raymond Cao, Lei Pan
  • Patent number: 12762320
    Abstract: An integrated circuit includes a middle active-region structure between a group-one active-region structure and a group-two active-region structure. The integrated circuit also includes a main circuit, a group-one circuit, and a group-two circuit. The main circuit includes at least one boundary gate-conductor intersecting the middle active-region structure. The group-one circuit includes a group-one isolation structure separating the group-one active-region structure into a first part in the group-one circuit and a second part in a first adjacent circuit. The group-two circuit includes a group-two isolation structure separating the group-two active-region structure into a first part in the group-two circuit and a second part in a second adjacent circuit.
    Type: Grant
    Filed: July 6, 2023
    Date of Patent: October 13, 2026
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC CHINA COMPANY, LIMITED, TSMC NANJING COMPANY, LIMITED
    Inventors: Huaixin Xian, J. B. Zhang, Yang Zhou, Kai Zhou, Qingchao Meng, Lei Pan
  • Patent number: 12765055
    Abstract: An IC structure includes first and second gates, first and second source regions, a shared drain region, and an isolation region. The first gate has a first portion extending along a first direction and a second portion extending along a second direction. The second gate has a first portion extending along the first direction and a second portion extending along the second direction. The shared drain region extends from the first portion of the first gate to the first portion of the second gate. The first source region is spaced apart from the shared drain region by the first gate. The second source region is spaced apart from the shared drain region by the second gate. The isolation region is between the first portion of the first gate and the first portion of the second gate, and resembles a quadrilateral pattern bordering the shared drain region.
    Type: Grant
    Filed: July 31, 2023
    Date of Patent: October 13, 2026
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., TSMC NANJING COMPANY LIMITED, TSMC CHINA COMPANY LIMITED
    Inventors: Tian-Yu Xie, Xin-Yong Wang, Lei Pan, Kuo-Ji Chen
  • Publication number: 20260312588
    Abstract: An integrated circuit is provided and includes a first active region of a first conductivity type coupled to a first voltage terminal and corresponding to a first terminal of a first transistor and a first terminal of a second transistor included in an inverter of a level shifter circuit, wherein the first transistor is configured to discharge electrostatic charges to the first voltage terminal; and second and third active regions, corresponding to a third transistor, of a second conductivity type different from the first conductivity type, wherein the second active region is coupled to a second voltage terminal, and the third active region is coupled to a first terminal, different from the second voltage terminal, of the level shifter circuit. The third transistor is configured to transmit a first supply voltage from the second voltage terminal for the integrated circuit.
    Type: Application
    Filed: June 17, 2026
    Publication date: October 8, 2026
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC China Company Limited
    Inventors: Huizhi YANG, Qinling MA, Lei PAN, Yaqi MA
  • Patent number: 12754685
    Abstract: Technologies for storing streaming data include, in some embodiments, in response to determining that the chunk size satisfies a chunk size threshold and the streaming data is sequential data of a size that satisfies a threshold sequential data size, writing the sequential data to a first file system partition of a file system comprising a plurality of file system partitions, and in response to determining that the chunk size does not satisfy the chunk size threshold or the chunk size satisfies the chunk size threshold and the streaming data is the first type of metadata, writing the streaming data to a second file system partition of the plurality of file system partitions.
    Type: Grant
    Filed: May 20, 2024
    Date of Patent: October 6, 2026
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Lei Pan, Qi Dong
  • Publication number: 20260302672
    Abstract: A terminal comprises a terminal shell and a terminal board. The terminal shell has a top wall and a bottom wall opposite each other in its height direction, and an elastic member located on the inner side of the top wall. The elastic member includes a pressing plate and multiple support arms connected to four edges of the pressing plate. The multiple support arms extend obliquely away from the pressing plate relative to the height direction, and are adapted to suspend the pressing plate on an inner side of the top wall. The terminal board has a front end fixed to the inner side of the bottom wall of the terminal shell and a contact protrusion formed on the front surface of its front end.
    Type: Application
    Filed: March 26, 2026
    Publication date: October 1, 2026
    Applicants: Tyco Electronics (Shanghai) Co., Ltd., Tyco Electronics Technology (SIP) Co., Ltd.
    Inventors: Yu (Shanks) Du, Lei Pan, Weidong Zhang
  • Publication number: 20260277081
    Abstract: A fixing structure and a camera device are provided. The fixing structure is configured to fix a camera. The camera includes a first portion and a second portion. The first portion and the second portion are located on different sides of the camera. The fixing structure includes an outer housing, a bracket and an inner housing. The outer housing includes a first snap-fit hole, and the first portion is snap-fitted in the first snap-fit hole. The bracket is rotatably connected to the outer housing. The second portion is rotatably connected to the bracket, and the second portion is connected to the outer housing. The inner housing includes a second snap-fit hole. The first portion is snap-fitted in the second snap-fit hole. The inner housing is connected to the outer housing. The present application solves the problem in existing camera fixing devices where cameras tend to sag because of rotation.
    Type: Application
    Filed: December 18, 2023
    Publication date: September 17, 2026
    Applicants: Global Media Industry Group Co., Ltd.
    Inventor: Lei PAN
  • Publication number: 20260274703
    Abstract: Methods of growing large, free-standing single crystals of all-inorganic or hybrid organic-inorganic cesium lead halide perovskites in solution using tertiary or ternary alkyl ammonium salts and weak organic acid additives are provided. By including the additives in a crystallization solution with perovskite precursors, larger single crystals can be grown by slow evaporation or inverse temperature crystallization than would possible in the absence of the additives under the same growth conditions.
    Type: Application
    Filed: May 4, 2026
    Publication date: September 17, 2026
    Inventors: Mercouri G. Kanatzidis, Yucheng Liu, Lei Pan
  • Patent number: 12712547
    Abstract: An integrated circuit is provided and includes a first active region of a first conductivity type coupled to a first voltage terminal and corresponding to a first terminal of a first transistor and a first terminal of a second transistor included in an inverter of a level shifter circuit, wherein the first transistor is configured to discharge electrostatic charges to the first voltage terminal; and second and third active regions, corresponding to a third transistor, of a second conductivity type different from the first conductivity type, wherein the second active region is coupled to a second voltage terminal, and the third active region is coupled to a first terminal, different from the second voltage terminal, of the level shifter circuit. The third transistor is configured to transmit a first supply voltage from the second voltage terminal for the integrated circuit.
    Type: Grant
    Filed: July 13, 2023
    Date of Patent: August 18, 2026
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC CHINA COMPANY LIMITED
    Inventors: Huizhi Yang, Qinling Ma, Lei Pan, Yaqi Ma
  • Publication number: 20260213449
    Abstract: A combined terminal includes a terminal having a first elastic arm formed at the front of the terminal, and a shell sleeved on the front of the terminal. A contact protrusion or a second elastic arm protruding toward the first elastic arm is formed on a top wall of the shell, and the contact protrusion or the second elastic arm is oppositely spaced from the first elastic arm to clamp a mating terminal inserted between the contact protrusion or the second elastic arm and the first elastic arm. A conductive property of a manufacturing material for the terminal is distinct to a conductive property of a manufacturing material for the shell, and a mechanical property of the manufacturing material for the shell is distinct to a mechanical property of the manufacturing material for the terminal.
    Type: Application
    Filed: January 20, 2026
    Publication date: July 23, 2026
    Applicants: Tyco Electronics (Shanghai) Co., Ltd., Tyco Electronics Technology (SIP) Co., Ltd.
    Inventors: Kai Wang, Weidong Zhang, Lei Pan
  • Publication number: 20260209889
    Abstract: An exemplary method for recovering metals from a feed material may include processing feed material, mixing the processed feed material with one or more sulfide minerals or sulfide chemicals to generate a slurry, reacting the slurry and maintaining a target partial oxygen gas pressure, filtering solids from reacted slurry to form a pregnant leach solution, and precipitating one or more metals from the pregnant leach solution. The feed materials may comprise electrode active material recovered from Li-ion batteries.
    Type: Application
    Filed: December 18, 2023
    Publication date: July 23, 2026
    Inventors: Lei Pan, Ruiting Zhan
  • Patent number: 12681816
    Abstract: Provided are techniques for replicating data with a data orchestrator. A replication request and a policy for an original dataset to be replicated on one or more storage systems as one or more replicated datasets are received. A storage system of the one or more storage systems is selected. It is determined whether a custom storage system plug-in is associated with the storage system based on a storage system type. In response to determining that the custom storage system plug-in is associated with the storage system, the custom storage system plug-in is executed to create a replicated dataset on the storage system. In response to determining that the custom storage system plug-in is not associated with the storage system, a script is generated based on the policy and the script is executed to create the replicated dataset on the storage system.
    Type: Grant
    Filed: February 21, 2024
    Date of Patent: July 14, 2026
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jeremy Andrew Cohn, Marc Eshel, Frank Schmuck, Vasily Tarasov, Lei Pan, D Scott Guthridge
  • Patent number: 12681667
    Abstract: Exemplary methods, apparatuses, and systems include a retention latency manager for controlling memory access operations in computing systems based on latency of a set of data bits. The retention latency manager receives a set of data bits from a host. The retention latency manager writes a time stamp. The retention latency manager writes the set of data bits to a location in memory. The retention latency manager computes a time difference between a current time and the time stamp. The retention latency manager selects a set of trim settings using the time difference. The retention latency manager reads the set of data bits from the first location in memory using the set of trim settings.
    Type: Grant
    Filed: January 5, 2024
    Date of Patent: July 14, 2026
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Lei Pan, Minjian Wu
  • Publication number: 20260180581
    Abstract: A method of operating a level shifting circuit includes receiving, at a bias circuit, a first voltage level and a second voltage level, generating, from the bias circuit, a bias voltage having the greater of the first voltage level or the second voltage level, receiving the first voltage level at a source/drain (S/D) terminal of a first PMOS transistor included in a level shifter, receiving the second voltage level at a S/D terminal of a second PMOS transistor included in the level shifter, and receiving the bias voltage at a bulk terminal of each of the first PMOS transistor and the second PMOS transistor.
    Type: Application
    Filed: February 19, 2026
    Publication date: June 25, 2026
    Inventors: Yaqi MA, Lei PAN, JunKui HU
  • Patent number: 12662391
    Abstract: Methods of growing large, free-standing single crystals of (FAxCs1-x)PbBr3 perovskites, where 0?x<1, in solution using tertiary or ternary alkyl ammonium salts, weak organic acids, or a combination thereof are provided. By including the additives in a crystallization solution with perovskite precursors, larger single crystals can be grown by slow evaporation or inverse temperature crystallization than would possible in the absence of the additives under the same growth conditions.
    Type: Grant
    Filed: March 24, 2022
    Date of Patent: June 23, 2026
    Assignee: Northwestern University
    Inventors: Mercouri G. Kanatzidis, Yucheng Liu, Lei Pan
  • Publication number: 20260162963
    Abstract: A method is provided for producing a cathode active material. The method includes providing an anode sheet comprising an anode material disposed on an anode current collector and a cathode sheet comprising a cathode material disposed on a cathode current collector, delaminating the anode material from the anode current collector, separating the anode material from the anode current collector, and delaminating the cathode material from the cathode current collector. The method further includes performing size reduction and deagglomeration on the cathode material, which includes the cathode active material and a binder, separating the cathode material from the cathode current collector using a filter and/or a sieve, and performing gravity separation to separate the cathode active material from the binder.
    Type: Application
    Filed: January 28, 2026
    Publication date: June 11, 2026
    Inventors: Lei PAN, Tinuade O. FOLAYAN, Kulwinder DHINDSA, Dianne Atienza HAY
  • Patent number: 12635072
    Abstract: A vibration detector includes a housing, a cover plate, a piezoelectric sensing module, and a PCBA module. The piezoelectric sensing module is arranged in the housing and generates a piezoelectric signal in response to vibration of the cover plate. The PCBA module is arranged in the housing and is electrically coupled to the piezoelectric sensing module. The PCBA module is adapted to receive the piezoelectric signal from the piezoelectric sensing module and to generate a detection signal based on the piezoelectric signal.
    Type: Grant
    Filed: August 29, 2023
    Date of Patent: May 19, 2026
    Assignee: Tyco Electronics (Shanghai) Co., Ltd.
    Inventors: Lei Pan, Jin Darren Chen
  • Publication number: 20260120949
    Abstract: Disclosed herein are charge or electricity generating devices and methods of making and use thereof.
    Type: Application
    Filed: December 16, 2024
    Publication date: April 30, 2026
    Inventors: Lei Raymond CAO, Lei PAN