Abstract: A thin film transistor and a manufacturing method therefor, an array substrate, and a display device. The thin film transistor includes an active layer, a gate insulating layer, and a gate electrode; the gate insulating layer is located on one side of the active layer; the gate electrode is located on one side of the gate insulating layer distant from the active layer; the gate electrode includes an opening a part of the active layer overlapped with the opening includes a first lightly doped region, a first heavily doped region, and a second lightly doped region that are sequentially arranged along a first direction parallel to a plane where the active layer is located.

Abstract: An array substrate, a manufacturing method thereof and a display device are provided. The array substrate includes: a base substrate; a first electrode located on the base substrate and including a pad portion, the pad portion including a first surface and a second surface, the second surface being closer to the base substrate than the first surface; a first insulation layer located on the first electrode and including a first via hole; a second insulation layer located on the first insulation layer and including a second via hole; and a second electrode located on the second insulation layer; the second electrode is electrically connected with the first electrode at the pad portion through the first via hole and the second via hole, and an orthographic projection of the pad portion on the base substrate falls within an orthographic projection of the second via hole on the base substrate.

Abstract: An array substrate and a manufacturing method thereof, and a display device are provided. The array substrate includes: a base substrate; a plurality of gate lines on a side of the base substrate; a plurality of data lines on a side of the plurality of gate lines away from the base substrate and intersecting with the plurality of gate lines; and a plurality of light shielding metal portions between the base substrate and each of the plurality of gate lines; respective one of the gate lines includes a plurality of gate line sub-segments separated by the plurality of data lines, respectively, every two adjacent gate line sub-segments in the respective one of the gate lines correspond to one of the light shielding metal portions, and the every two adjacent gate line sub-segments are connected in series through the one of the light shielding metal portions.

Abstract: An optoelectronic device that includes at least one adjustable optical damping member arranged upstream of a photodetector and damps the optical radiation passing to the photodetector. The device is configured so that an electrical output of an amplifier is connected directly or indirectly to the adjustable optical damping member. An output signal of the amplifier or a control signal formed therewith drives the optical damping member, and the photodetector, the amplifier and the damping member are integrated in the same semiconductor substrate.

Abstract: A premixed underground ventilated henhouse includes a gable, a sidewall, a roof and a floor. An inner chamber is further provided in the middle of the henhouse. A partition is hermetically provided between the sidewall and an inner wall. An air inlet plate is provided between the two inner walls. A plurality of fans and a plurality of air inlet windows are uniformly provided on an inner roof. A plurality of wet curtains and an air vent are provided on the sidewall. Air outlet slots are uniformly provided on the inner wall. An underground exhaust bunker is provided under the floor. A vent pipe and a fan are provided on one side of the underground exhaust bunker. An air outlet is provided at an upper end of the vent pipe.

Abstract: A deep-sea low-cost long-endurance collaborative navigation and positioning system. A shore-based monitoring center transmits a route planning solution to a wave glider. The wave glider follows an underwater vehicle to travel and feeds back state information of the wave glider and state information of the underwater vehicle to the shore-based monitoring center in real time. The shore-based monitoring center adjusts the route planning solution according to the state information in real time. The wave glider and the underwater vehicle are respectively equipped with an underwater acoustic communication machine.

Abstract: The present disclosure discloses a method for quantifying a bearing capacity of foundation containing shallow-hidden spherical cavities, comprising: in Step 1, constructing a spatial axisymmetric calculation model for stability analysis of the foundation containing shallow-hidden spherical cavities; in Step 2, solving the model to obtain a general solution which reflects the spatial stress distribution of surrounding rock containing shallow-hidden spherical cavities; in Step 3, obtain a mathematical expression by derivation for calculating the bearing capacity of the foundation containing shallow-hidden spherical cavities; and in Step 4: completing the determination of the foundation bearing capacity. Benefits: This method has many advantages such as comprehensive consideration, high accuracy and reliability of calculation results, and may provide the scientific basis for the development of prevention and control against the instability of the foundation containing shallow-hidden cavities.

Abstract: The invention relates to a method and system for path planning of a wave glider, comprising acquiring historical navigation data of the glider and an underwater vehicle via a shore-based monitoring center; fitting historical navigation data nonlinearly by a deep learning neural network to obtain a trained network; acquiring real-time navigation data of the glider at an off-line end, real-time navigation data and predetermined shipping track data of the vehicle; obtaining the set of off-line optimized path planning schemes of the glider by the above data and the trained network; and determining an optimal path planning scheme of the glider by the deep learning neural network according to real-time data and constraint data of the glider at the on-line end. The invention can reasonably plan the path of the glider and ensure continuous and reliable information interaction between the glider and the vehicle.

Abstract: The present disclosure provides a thin film transistor and a method for manufacturing the same, an array substrate, and a display device. The thin film transistor includes: an active layer located on one side of the substrate; a first interlayer dielectric layer located on one side of the active layer away from the substrate; a source penetrating through the first interlayer dielectric layer, and connected to the active layer; a second interlayer dielectric layer located on one side of the first interlayer dielectric layer away from the active layer and covering the source; and a drain, wherein the drain comprises a first portion penetrating through the second interlayer dielectric layer and the first interlayer dielectric layer and connected to the active layer.

Abstract: An image fusing method includes converting a first image into a first intermediate image, converting a second image into a second intermediate image including a plurality of components, fusing one of the plurality of components of the second intermediate image with the first intermediate image to obtain a fused component, and combining the fused component and other ones of the plurality of components of the second intermediate image to obtain a target image.

Abstract: A CMOS thin film transistor, a method for manufacturing the same, and an array substrate are provided. The method includes: forming a semiconductor layer including an N-type region and a P-type region on a substrate, the N-type region is divided into a first region, a second region, a third region, a fourth region and a fifth region, the P-type region is divided into a sixth region, a seventh region and an eighth region; performing first N-type ion doping on the first region and the fifth region; performing first P-type ion doping on the N-type region; performing second P-type ion doping on the N-type region and the P-type region; performing second N-type ion doping on the first region, the second region, the fourth region, the fifth region, the sixth region and the eighth region; and performing third P-type ion doping on the sixth region and the eighth region.

Abstract: The present disclosure provides a light field imaging system by projecting near-infrared spot in remote sensing based on a multifocal microlens array. The light field imaging system includes a near-infrared spot projection apparatus (100) and a light field imaging component (200), where the near-infrared spot projection apparatus (100) is configured to scatter near-infrared spots on a to-be-observed object to add texture information to a target image, and the light field imaging component (200) is configured to image a target scene light ray with additional texture information. The present disclosure can extend a target depth-of-field (DOF) detection range, and particularly, reconstruct a surface of a weak-texture object.

Abstract: An augmented reality method for an endoscope includes constructing a first virtual three-dimensional model by using the volume image; setting a reference frame of a position tracking device as a global reference frame; obtaining a second virtual three-dimensional model of the subject by using laser scanning; calculating a first transformation between the first virtual three-dimensional model and the second virtual three-dimensional model by the iterative closest point algorithm, and applying the first transformation to the first virtual three-dimensional model to generate a third virtual three-dimensional model; tracking the first tracker by the position tracking device to provide an endoscopic virtual position; imaging a virtual image corresponding to an endoscopic image imaged by the endoscope based on the endoscopic virtual position and the third virtual three-dimensional model, and superimposing the endoscopic image with the virtual image to display a superimposed image.

Abstract: A lighting fixture is provided. The lighting fixture includes a support column including a top end, a bottom end, and a side wall between the top end and the bottom end; a first light source module assembled on an outer side of the side wall of the support column, including a substrate and a plurality of columns of first light sources on the substrate and arranged along a circumferential direction of the support column, and each column of first light sources extending along a direction from the top end to the bottom end of the support column; and a face mask covering an outer side of the first light source module. The plurality of columns of first light sources are configured to emit light laterally toward the face mask, and a maximum light-emitting surface of each column intersects an adjacent column on the face mask.

Abstract: It is provided a laser arrangement, having an electro-absorption-modulated laser, having a laser section and an electro-absorption modulator section; a current source for supplying the laser section with current; a DC voltage source that is arranged in addition to the current source and can be used to apply DC voltage to a diode structure of the electro-absorption modulator section; a driver with which an RF signal is able to be fed to the laser; and an electrical connection via which the driver is connected to the laser. The electrical connection provides a direct current connection between the driver and the laser such, and the driver is configured such, that a photocurrent that is generated in the electrode-absorption modulator section of the laser by illumination with light of the laser section at least partially flows to the driver and at least contributes to the energy supply of the driver.

Abstract: Provided is a transistor, the transistor being located on a base and having an active layer, and the active layer of the transistor comprising a plurality of semiconductor patterns which are stacked, wherein the plurality of semiconductor patterns are electrically connected; and orthographic projections of any two of the semiconductor patterns on the base are different in shape. A method of manufacturing a transistor, a transistor device, and a display substrate and apparatus are also provided.

Abstract: The present disclosure provides a thin film transistor and a method for manufacturing the same, an array substrate, and a display device. The thin film transistor includes: an active layer located on one side of the substrate; a first interlayer dielectric layer located on one side of the active layer away from the substrate; a source penetrating through the first interlayer dielectric layer, and connected to the active layer; a second interlayer dielectric layer located on one side of the first interlayer dielectric layer away from the active layer and covering the source; and a drain, wherein the drain comprises a first portion penetrating through the second interlayer dielectric layer and the first interlayer dielectric layer and connected to the active layer.

Abstract: A thin-film transistor (TFT), an array substrate, a manufacturing method thereof and a display device are provided. The TFT includes an active layer, a gate electrode, a first source/drain electrode and a second source/drain electrode. The active layer includes a first channel region and a second channel region, a first source/drain area between the first channel region and the second channel region, and a second source/drain area opposite to the first source/drain area through the first channel region or the second channel region. The gate electrode includes a first gate electrode and a second gate electrode which are respectively overlapped with the first channel region and the second channel region. The first source/drain electrode and the second source/drain electrode are respectively electrically connected with the first source/drain area and the second source/drain area of the active layer.

Abstract: An image processing method includes: obtaining a first band image and a second band image; registering the first band image and the second band image; performing an edge detection on the registered second band image to obtain an edge image; and performing a fusion processing on the registered first band image and the edge image to obtain a target image. The present disclosure also provides an image processing device and a UAV using the above method.

Abstract: An image processing method includes obtaining a first band image and a second band image, performing transparency processing on the first band image to obtain an intermediate image, and superimposing the intermediate image and the second band image to obtain a target image. The present disclosure also provide an image processing device and an unmanned aerial vehicle using the method above.