Abstract: An integrated circuit wire bond connection is provided having an aluminum bond pad (51) that is directly bonded to a copper ball (52) to form an aluminum splash structure (53) and associated crevice opening (55) at a peripheral bond edge of the copper ball (54), where the aluminum splash structure (53) is characterized by a plurality of geometric properties indicative of a reliable copper ball bond, such as lateral splash size, splash shape, relative position of splash-ball crevice to the aluminum pad, crevice width, crevice length, crevice angle, and/or crevice-pad splash index.

Abstract: A mold compound is provided for encapsulating a semiconductor device (101). The mold compound comprises at least approximately 70% by weight silica fillers, at least approximately 10% by weight epoxy resin system, and beneficial ions that are beneficial with respect to copper ball bond corrosion. A total level of the beneficial ions in the mold compound is at least approximately 100 ppm.

Abstract: A method of forming a packaged semiconductor device includes loading an array of package sites in position for saw singulation, saw singulating the array of package sites, and performing a non-electrolytic plating operation on exposed lead tips of individual packages from the array of package sites as the array of package sites is saw singulated.

Abstract: A method includes forming a packaged integrated circuit that includes forming a lead frame by separating an outer portion of the metal structure into a plurality of leads by stamping. The plurality of leads have sides with a first concavity. The lead frame is further formed by performing an etch on the sides of the plurality of leads to achieve a second concavity on the sides of leads. The second concavity is greater than the first concavity. A semiconductor die is attached to a center portion of the metal structure. Electrical attachments are made between the die and the leads.

Abstract: A first set of electrically conductive cladding is disposed on an inner section of one external side of a package substrate. The first set electrically conductive cladding is fabricated with a first solder compound. A second set of electrically conductive cladding is disposed on an outer section of the one external side of the substrate. The second set of electrically conductive cladding consists of a second solder compound. The outer section can be farther away from a center of the one external side of the substrate than the inner section. During a reflow process, the first and second solder compounds are configured to become completely molten when heated and the first solder compound solidifies at a higher temperature during cool down than the second solder compound.

Abstract: A method includes providing an integrated circuit (IC) die assembly that includes a substrate and an IC die mounted on a portion of a major surface of the substrate, dispensing an interface material on the IC die, positioning a portion of a heat spreader in contact with the interface material, and dispensing an adhesive between one side of the heat spreader facing the IC die assembly and exposed portions of a major surface of an encapsulant on the substrate.

Abstract: A packaged semiconductor device includes a package substrate, a semiconductor die on the package substrate, an encapsulant over the semiconductor die and package substrate, and a heat spreader having a pedestal portion and an outer portion surrounding the pedestal portion. The encapsulant includes an opening within a perimeter of the semiconductor die. The bottom surface of the pedestal portion of the heat spreader faces the top surface of the semiconductor die, wherein a first portion of the opening and at least a portion of the encapsulant is between the bottom surface of the pedestal portion and the semiconductor die.

Abstract: A mold compound is provided for encapsulating a semiconductor device (101). The mold compound comprises at least approximately 70% by weight silica fillers, at least approximately 10% by weight epoxy resin system, and beneficial ions that are beneficial with respect to copper ball bond corrosion. A total level of the beneficial ions in the mold compound is at least approximately 100 ppm.

Abstract: A method of forming a packaged semiconductor device includes loading an array of package sites in position for saw singulation, saw singulating the array of package sites, and performing a non-electrolytic plating operation on exposed lead tips of individual packages from the array of package sites as the array of package sites is saw singulated.

Abstract: A pressure sensor includes a first housing having a cavity. The pressure sensor further includes a pressure sensing device attached to a bottom of the cavity. The pressure sensor further includes a layer of gel over the pressure sensing device. The pressure sensor further includes a baffle in contact with the gel to reduce movement of the gel.

Abstract: A method and apparatus are provided for manufacturing a lead frame based thermally enhanced package (9) with exposed heat spreader lid array (96) designed to be optimized for compression mold encapsulation of an integrated circuit die (94) by including a perimeter reservoir regions (97r) in each heat spreader lid (96) for movement of mold compound (98) displaced during the mold compression process.

Abstract: A packaged semiconductor device comprises a package substrate comprising a first package substrate contact and a second package substrate contact, and a semiconductor die over the package substrate. The semiconductor device further includes electrical connections between signal contact pads of the die and the package substrate, and a heat spreader that comprises a first heat spreader portion which is electrically connected to a first signal contact pad and the first package substrate contact and provides an electrical conduction path and a thermal conduction path. A second heat spreader portion provides an electrical conduction path between a second signal contact pad and the second package substrate contact and a thermal conduction path between the die and package substrate. An insulating layer is positioned between the first and second heat spreader portions.

Abstract: An integrated circuit wire bond connection is provided having an aluminum bond pad (51) that is directly bonded to a copper ball (52) to form an aluminum splash structure (53) and associated crevice opening (55) at a peripheral bond edge of the copper ball (54), where the aluminum splash structure (53) is characterized by a plurality of geometric properties indicative of a reliable copper ball bond, such as lateral splash size, splash shape, relative position of splash-ball crevice to the aluminum pad, crevice width, crevice length, crevice angle, and/or crevice-pad splash index.

Abstract: A method of forming a packaged semiconductor device includes loading an array of package sites in position for saw singulation, saw singulating the array of package sites, and performing a non-electrolytic plating operation on exposed lead tips of individual packages from the array of package sites as the array of package sites is saw singulated.

Abstract: A mold compound is provided for encapsulating a semiconductor device (101). The mold compound comprises at least approximately 70% by weight silica fillers, at least approximately 10% by weight epoxy resin system, and beneficial ions that are beneficial with respect to copper ball bond corrosion. A total level of the beneficial ions in the mold compound is at least approximately 100 ppm.

Abstract: A packaged semiconductor device comprises a package substrate comprising a first package substrate contact and a second package substrate contact, and a semiconductor die over the package substrate. The semiconductor device further includes electrical connections between signal contact pads of the die and the package substrate, and a heat spreader that comprises a first heat spreader portion which is electrically connected to a first signal contact pad and the first package substrate contact and provides an electrical conduction path and a thermal conduction path. A second heat spreader portion provides an electrical conduction path between a second signal contact pad and the second package substrate contact and a thermal conduction path between the die and package substrate. An insulating layer is positioned between the first and second heat spreader portions.

Abstract: A technique for testing the compatibility of an encapsulation material and a wire bond included at an unencapsulated assembly. The technique includes immersing the assembly in an encapsulating compound extract. The assembly includes a semiconductor die and a bonding wire affixed to a metalized pad of the semiconductor die by the wire bond. After the immersing, a mechanical strength of the wire bond is determined.

Abstract: A method for forming a molded die assembly includes attaching a first major surface of a semiconductor die onto a package substrate; attaching a heat spreader to a second major surface of the semiconductor die, wherein the second major surface is opposite the first major surface, and wherein the semiconductor die, package substrate, and heat spreader form a die assembly; conforming a die release film to a transfer mold; closing the transfer mold around the die assembly such that the die release film is compressed against the heat spreader and a cavity is formed around the die assembly; transferring a thermoset material into the cavity; and releasing the die assembly from the die release film and the transfer mold.

Abstract: A method forms a connecting pillar to a bonding pad of an integrated circuit. A seed layer is formed over the bond pad. Photoresist is deposited over the integrated circuit. An opening is formed in the photoresist over the bond pad. The connecting pillar is formed in the opening by plating.

Abstract: An apparatus and method of forming a semiconductor package includes having and applying, respectively, a thermal interface material on a semiconductor die. The semiconductor die is included on a die assembly. The semiconductor die is installed in a heat spreader. The heat spreader is at least partially filled with mold compound and the semiconductor die is at least partially immersed in the mold compound once the die assembly is mounted on the heat spreader. The mold compound is then cured.