Abstract: Methods for coating a protective material on a semiconductor substrate to protect a back surface thereof from defects are provided, by depositing a diamond-like coating (DLC) material thereon at a low temperature, e.g. between about 150° C. to about 350° C.

Abstract: A method, apparatus and various material-architectures in an electrically conductive through die via formed of a composite material with a continuous phase of matrix metal and a dispersed phase of graphitic structures of carbon, wherein bulk material properties of the composite material differ from similar bulk material properties of the matrix metal.

Abstract: Embodiments of an apparatus and methods of forming a package on package interconnect and its application to the packaging of microelectronic devices are described herein. Other embodiments may be described and claimed.

Abstract: Methods are disclosed to process a thermal interface material to achieve easy pick and placement of the thermal interface material without lowering thermal performance of a completed semiconductor package. One method involves applying a non-adhesive layer on one or more surfaces of the thermal interface material, interfacing the thermal interface material with one or more components to interface the non-adhesive layer therebetween, and applying heat to alter the non-adhesive layer to increase thermal contact between the thermal interface material and the interfacing component(s).

Abstract: In one or more embodiments, a method comprising applying thermo compression to a package assembly including a lid, a die, and a package substrate to assemble the package assembly is disclosed. The method may include assembling the package assembly without coupling a biasing mechanism to the lid. Heat may be applied to a bond head coupled with a pick and place tool. Heat may be applied to a bond stage coupled to a carrier for holding the package assembly during processing. An adhesive applied to the lid or package substrate may be allowed to at least partially cure. The method may further include, in an oven, reflowing a thermal interface material (TIM) coupled to the lid and the die, curing the TIM, and/or curing the adhesive, without using clips.

Abstract: A method, apparatus and system with an electrically conductive through hole via of a composite material with a matrix forming a continuous phase and embedded particles, with a different material property than the matrix, forming a dispersed phase, the resulting composite material having a different material property than the matrix.

Abstract: A microelectronic package includes a substrate (110, 210, 310, 410, 510, 731), a die (120, 220, 320, 420, 520, 732), and a heat spreading region (130, 230, 330, 430, 530, 733). The die, which has an active side (121, 221, 321, 421, 521) and a passive side (122, 222, 322, 422, 522) located opposite the active side, is located over the substrate, and the heat spreading region is adjacent to the passive side of the die. The heat spreading region includes a composite (135, 235, 335, 435, 535) of nanotubes and a thermally conducting material.

Abstract: A method, apparatus and various material-architectures in an electrically conductive through die via formed of a composite material with a continuous phase of matrix metal and a dispersed phase of graphitic structures of carbon, wherein bulk material properties of the composite material differ from similar bulk material properties of the matrix metal.

Abstract: Embodiments include electronic assemblies and methods for forming electronic assemblies. One embodiment includes a method of forming a MEMS device assembly, including forming an active MEMS region on a substrate. A plurality of bonding pads electrically coupled to the active MEMS region are formed. A seal ring wetting layer is also formed on the substrate, the seal ring wetting layer surrounding the active MEMS region. A single piece solder preform is positioned on the bonding pads and on the seal ring wetting layer, the single piece solder preform including a seal ring region and a bonding pad region. The seal ring region is connected to the bonding pad region by a plurality of solder bridges. The method also includes heating the single piece solder preform to a temperature above the reflow temperature, so that the bridges split and the solder from the preform accumulates on the seal ring wetting layer and the bonding pads. A lid is coupled to the solder.

Abstract: A bonding method, comprising locating a composition between and in contact with first and second pieces, the composition including a bonding metal which is one of Zn, Sn, In, and Bi, and a melting temperature depressing metal which is different than the bonding metal and is one of Zn, Sn, In, and Bi, heating the composition to diffuse the melting temperature depressing metal into the first piece and increase the melting temperature of the composition, and allowing the composition to cool.

Abstract: In some embodiments, an adhesive system for supporting thin silicon wafer is presented. In this regard, a method is introduced to bond a silicon wafer to a translucent carrier through the use of an adhesive. Other embodiments are also disclosed and claimed.

Abstract: Embodiments include electronic assemblies and methods for forming electronic assemblies. One embodiment includes a method of forming a MEMS device assembly, including forming an active MEMS region on a substrate. A plurality of bonding pads electrically coupled to the active MEMS region are formed. A seal ring wetting layer is also formed on the substrate, the seal ring wetting layer surrounding the active MEMS region. A single piece solder preform is positioned on the bonding pads and on the seal ring wetting layer, the single piece solder preform including a seal ring region and a bonding pad region. The seal ring region is connected to the bonding pad region by a plurality of solder bridges. The method also includes heating the single piece solder preform to a temperature above the reflow temperature, so that the bridges split and the solder from the preform accumulates on the seal ring wetting layer and the bonding pads. A lid is coupled to the solder.

Abstract: A method, apparatus and system with an electrically conductive through hole via of a composite material with a matrix forming a continuous phase and embedded particles, with a different material property than the matrix, forming a dispersed phase, the resulting composite material having a different material property than the matrix.

Abstract: A method of supporting a microelectronic wafer during backside processing. The method comprises: selecting a rigid carrier including a radiation absorbing film thereon, an adhesive, and a radiation source to emit radiation at a predetermined wavelength range; forming a wafer-carrier stack by providing the adhesive between the wafer and the carrier and curing the adhesive to bond the wafer to the carrier; subjecting the wafer in the wafer-carrier stack to backside processing; and removing the carrier and the adhesive from the wafer-carrier stack comprising detackifying the adhesive by irradiating the wafer-carrier stack from a carrier side thereof with radiation from the radiation source. The carrier is adapted to transmit therethrough at least some of the radiation from the radiation source.

Abstract: A method of forming a via having a stress buffer collar, wherein the stress buffer collar can absorb stress resulting from a mismatch in the coefficients of thermal expansion of the surrounding materials. Other embodiments are described and claimed.

Abstract: A method of supporting a microelectronic wafer during backside processing. The method comprises: selecting a rigid carrier, an adhesive, and a radiation source to emit radiation at a predetermined wavelength range; forming a wafer-carrier stack by providing the adhesive between the wafer and the carrier and curing the adhesive to bond the wafer to the carrier; subjecting the wafer in the wafer-carrier stack to backside processing; and removing the carrier and the adhesive from the wafer-carrier stack comprising detackifying the adhesive by irradiating the wafer-carrier stack from a carrier side thereof with radiation from the radiation source. The carrier is adapted to transmit therethrough at least some of the radiation from the radiation source. and the adhesive is adapted to absorb substantially all radiation transmitted through the carrier and is further adapted to be detackified as a result of absorbing said substantially all radiation.

Abstract: A micromachined device for efficient thermal processing at least one fluid stream includes at least one fluid conducting tube having at least a region with wall thickness of less than 50 ?m. The device optionally includes one or more thermally conductive structures in thermal communication with first and second thermally insulating portions of the fluid conducting tube. The device also may include a thermally conductive region, and at least a portion of the fluid conducting tube is disposed within the region. A plurality of structures may be provided projecting from a wall of the fluid conducting tube into an inner volume of the tube. The structures enhance thermal conduction between a fluid within the tube and a wall of the tube. A method for fabricating, from a substrate, a micromachined device for processing a fluid stream allows the selective removal of portions of the substrate to provide desired structures integrated within the device.

Abstract: Integrated circuit packages and their manufacture are described, wherein the packages comprise dendrimers or hyperbranched polymers. In some implementations, the dendrimers or hyperbranched polymers include repeat units having one or more ring structures and having surface groups to react with one or more components of a plastic. In some implementations, the dendrimers or hyperbranched polymers have a glass transition temperature of less than an operating temperature of the integrated circuit and form at least a partially separate phase.

Abstract: Electronic device support and processing methods are described. One embodiment includes a method of processing an electronic device including solder bumps extending therefrom. The method includes providing at least one fluid selected from the group consisting of electrorheological fluids and magnorheological fluids on a support structure. The solder bumps extending from the electronic device are positioned in the fluid. The fluid is activated by applying a field selected from the group consisting of an electric field and a magnetic field to the fluid. The activated fluid mechanically holds the electronic device in place. A surface of the electronic device is polished while the electronic device is held in place by the activated fluid. The fluid is deactivated by removing the applied field from the fluid, and the electronic device is separated from the deactivated fluid. Other embodiments are described and claimed.

Abstract: Wafer thinning may be accomplished by grinding while the wafer is held in the fixture. The fixture may have a series of protrusions that form an interference fit with surface features extending outwardly from the non-thinned surface of the wafer to be thinned. In some embodiments, a releasable adhesive may be utilized to augment the interference effect. Also, in some embodiments, openings in a shape memory material may be utilized that, upon heating, more firmly engage the bumps on the wafer to be thinned.