Patents by Inventor Leong Yap CHIA
Leong Yap CHIA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10618301Abstract: In an example implementation, a method of operating a fluid sensing device includes enabling a fluid level sensing circuit on a printhead to determine a fluid level by sharing an applied charge between a capacitive sensor and a reference capacitor to determine a capacitance value of the capacitive sensor. The method includes enabling a fluid property sensing circuit on the printhead to determine a fluid property by measuring a transistor voltage that indicates a concentration of ions gathered on the capacitive sensor.Type: GrantFiled: July 24, 2015Date of Patent: April 14, 2020Assignee: Hewlett-Packard Development Company, L.P.Inventors: Ning Ge, Leong Yap Chia, Wai Mun Wong, Ser Chia Koh
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Patent number: 10224335Abstract: The present subject matter relates to an integrated circuit comprising an erasable programmable read only memory (EPROM) array having a plurality of EPROM cells disposed in rows and columns, wherein one or more EPROM cells located at predetermined positions in the EPROM array are selectively dischargeable. The one or more EPROM cells comprise a EPROM transistor having a first conductive layer to store electrons upon the EPROM transistor being programmed and a control metal oxide semiconductor field-effect transistor (MOSFET) electrically connected to the first conductive layer to provide an electron leakage path to dissipate the electrons stored in the first conductive layer in a predetermined leak time period.Type: GrantFiled: January 29, 2015Date of Patent: March 5, 2019Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Wai Mun Wong, Leong Yap Chia, Ning Ge
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Patent number: 10224935Abstract: A device having ratioed logic with a high impedance load is described. The device includes a pull-down network coupled between a first voltage and an output. The device also includes a high impedance load coupled between a second voltage and the output. The high impedance load being smaller than a transistor of the pull-down network.Type: GrantFiled: October 30, 2014Date of Patent: March 5, 2019Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Ning Ge, Boon Bing Ng, Leong Yap Chia
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Patent number: 10173420Abstract: The present subject matter relates to a printhead assembly comprising a plurality of print nozzles in a nozzle array. Each of the plurality of print nozzles is coupled to a printhead firing resistor, the printhead firing resistor being individually addressable. A print control circuit is to actuate the printhead firing resistor. In accordance with one example implementation of the present subject matter, the print control circuit comprises pull-down resistors made of Tantalum-Aluminum (Ta—Al).Type: GrantFiled: July 30, 2015Date of Patent: January 8, 2019Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Wai Mun Wong, Leong Yap Chia, Ning Ge
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Patent number: 10170180Abstract: A memory cell includes an input coupled to a read line, an output coupled to a circuit ground, a bi-polar memristor, and at least one address switch coupled to an address line to select the memory cell. A memory includes the bi-polar memristor and a one-way current conducting device, wherein the one-way current conducting device is positioned between the memristor cell output and the circuit ground, or between the read line and the memristor cell input.Type: GrantFiled: April 30, 2015Date of Patent: January 1, 2019Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Ning Ge, Wai Mun Wong, Leong Yap Chia, Ser Chia Koh
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Publication number: 20180290457Abstract: In an example implementation, a method of operating a fluid sensing device includes enabling a fluid level sensing circuit on a printhead to determine a fluid level by sharing an applied charge between a capacitive sensor and a reference capacitor to determine a capacitance value of the capacitive sensor. The method includes enabling a fluid property sensing circuit on the printhead to determine a fluid property by measuring a transistor voltage that indicates a concentration of ions gathered on the capacitive sensor.Type: ApplicationFiled: July 24, 2015Publication date: October 11, 2018Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Ning Ge, Leong Yap Chia, Wei Mun Wong, Ser Chia Koh
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Patent number: 10084062Abstract: In some examples, a semiconductor device includes a substrate, a first doped region formed in the substrate, a second doped region around and spaced apart from the first doped region, and a channel between the first and second doped regions and formed using a gate ring on the substrate as a mask. A gate is formed over only a portion of the channel, the gate being a portion of the gate ring.Type: GrantFiled: July 24, 2017Date of Patent: September 25, 2018Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Ning Ge, Leong Yap Chia, Pin Chin Lee, Jose Jehrome Rando
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Patent number: 10081178Abstract: Addressing an EPROM on a printhead is described. In an example, a printhead includes an electronically programmable read-only memory (EPROM) having a plurality of cells arranged in rows and columns, each of the cells having a addressing port, a row select port, and a column select port. A conductor is coupled to the addressing portion of each of the plurality of cells. A column shift register is coupled to the column select ports of the plurality of cells, the column shift register having a register location for each column of the plurality of cells and having an input to receive a first input signal. A row shift register is coupled to row select ports of the plurality of cells, the row shift register having a register location for each row of the plurality of cells and having an input to receive a second input signal.Type: GrantFiled: January 23, 2018Date of Patent: September 25, 2018Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Ning Ge, Leong Yap Chia, Wai Mun Wong
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Patent number: 10071552Abstract: In an example, a device for sensing a property of a fluid may include an ion-sensitive field effect transistor (ISFET) having a gate, a source, and a drain. The device may also include a first metal element in contact with the gate and a switching layer in contact with the first metal layer. A resistance state of the switching layer is to be modified through application of an electrical field of at least a predefined strength through the switching layer and is to be retained in the switching layer following removal of the electrical field. The device may also include a metal plate in contact with the switching layer, in which the metal plate is to directly contact the fluid for which the property is to be sensed.Type: GrantFiled: April 30, 2015Date of Patent: September 11, 2018Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Ning Ge, Zhiyong Li, Leong Yap Chia, Wai Mun Wong
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Patent number: 10026476Abstract: A circuit comprising an input, a ground, a first switch, a second switch and a bi-polar memristor, wherein the first switch is a first transistor and a gate of the first transistor is connected to a line to instruct setting of the bi-polar memristor, and the second switch is a second transistor and a gate of the second transistor is connected to a line to instruct re-setting of the bi-polar memristor.Type: GrantFiled: November 25, 2014Date of Patent: July 17, 2018Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Leong Yap Chia, Ning Ge, Wai Mun Wong
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Patent number: 9987842Abstract: A print head with a number of memristors and inverters is described. The print head includes a number of nozzles to deposit an amount of fluid onto a print medium. Each nozzle includes a firing chamber to hold the amount of fluid, an opening to dispense the amount of fluid onto the print medium, and an ejector to eject the amount of fluid through the opening. The print head also includes a number of memristor cells. Each memristor cell includes a memristor to store data, a voltage divider serially connected to the 116 memristor cell, and an inverter connected in parallel with the number of memristor cells and the voltage divider.Type: GrantFiled: October 29, 2014Date of Patent: June 5, 2018Assignee: Hewlett-Packard Development Company, L.P.Inventors: Jianwen Luo, Leong Yap Chia, Ning Ge
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Publication number: 20180147839Abstract: Addressing an EPROM on a printhead is described. In an example, a printhead includes an electronically programmable read-only memory (EPROM) having a plurality of cells arranged in rows and columns, each of the cells having a addressing port, a row select port, and a column select port. A conductor is coupled to the addressing portion of each of the plurality of cells. A column shift register is coupled to the column select ports of the plurality of cells, the column shift register having a register location for each column of the plurality of cells and having an input to receive a first input signal. A row shift register is coupled to row select ports of the plurality of cells, the row shift register having a register location for each row of the plurality of cells and having an input to receive a second input signal.Type: ApplicationFiled: January 23, 2018Publication date: May 31, 2018Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Ning Ge, Leong Yap Chia, Wai Mun Wong
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Publication number: 20180134037Abstract: The present subject matter relates to a printhead assembly comprising a plurality of print nozzles in a nozzle array. Each of the plurality of print nozzles is coupled to a printhead firing resistor, the printhead firing resistor being individually addressable. A print control circuit is to actuate the printhead firing resistor. In accordance with one example implementation of the present subject matter, the print control circuit comprises pull-down resistors made of Tantalum-Aluminum (Ta—Al).Type: ApplicationFiled: July 30, 2015Publication date: May 17, 2018Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Wai Mun Wong, Leong Yap Chia, Ning Ge
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Patent number: 9950520Abstract: A printhead having a number of single-dimensional memristor banks is described. The printhead includes a number of nozzles to deposit an amount of fluid onto a print medium. Each nozzle includes a firing chamber to hold the amount of fluid, an opening to dispense the amount of fluid onto the print medium, and an ejector to eject the amount of fluid through the opening. The printhead also includes a number of single-dimensional memristor banks. Each memristor bank includes a number of memristors arranged in a single dimension and a number of serially-connected de-multiplexers to selectively activate a target memristor of the memristor bank. The number of serially-connected de-multiplexers is equal to the number of memristors and an output of at least one de-multiplexer is an input into a subsequent de-multiplexer.Type: GrantFiled: October 28, 2014Date of Patent: April 24, 2018Assignee: Hewlett-Packard Development Company, L.P.Inventors: Ning Ge, Leong Yap Chia, Pin Chin Lee
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Patent number: 9953991Abstract: An electronically programmable read-only memory (EPROM) cell includes a semiconductor substrate having source and drain regions; a floating gate, adjacent to the source and drain regions and separated from the semiconductor substrate by a first dielectric layer, the floating gate including: a polysilicon layer formed over the first dielectric layer; a first metal layer electrically connected to the polysilicon layer, where the surface area of the first metal layer is less than 1000 ?m2; and a control gate comprising a second metal layer, capacitively coupled to the first metal layer through a second dielectric material disposed therebetween.Type: GrantFiled: March 14, 2014Date of Patent: April 24, 2018Assignee: Hewlett-Packard Development Company, L.P.Inventors: Ning Ge, Leong Yap Chia, Jose Jehrome Rando
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Patent number: 9919517Abstract: Addressing an EPROM on a printhead is described. In an example, a printhead includes an electronically programmable read-only memory (EPROM) having a plurality of cells arranged in rows and columns, each of the cells having a addressing port, a row select port, and a column select port. A conductor is coupled to the addressing portion of each of the plurality of cells. A column shift register is coupled to the column select ports of the plurality of cells, the column shift register having a register location for each column of the plurality of cells and having an input to receive a first input signal. A row shift register is coupled to row select ports of the plurality of cells, the row shift register having a register location for each row of the plurality of cells and having an input to receive a second input signal.Type: GrantFiled: January 17, 2014Date of Patent: March 20, 2018Assignee: Hewlett-Packard Development Company, L.P.Inventors: Ning Ge, Leong Yap Chia, Wai Mun Wong
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Publication number: 20180009224Abstract: In an example, a device for sensing a property of a fluid may include an ion-sensitive field effect transistor (ISFET) having a gate, a source, and a drain. The device may also include a first metal element in contact with the gate and a switching layer in contact with the first metal layer. A resistance state of the switching layer is to be modified through application of an electrical field of at least a predefined strength through the switching layer and is to be retained in the switching layer following removal of the electrical field. The device may also include a metal plate in contact with the switching layer, in which the metal plate is to directly contact the fluid for which the property is to be sensed.Type: ApplicationFiled: April 30, 2015Publication date: January 11, 2018Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Ning GE, Zhiyong Li, Leong Yap Chia, Wai Mun Wong
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Publication number: 20180012654Abstract: A memory cell includes an input coupled to a read line, an output coupled to a circuit ground, a bi-polar memristor, and at least one address switch coupled to an address line to select the memory cell. A memory includes the bi-polar memristor and a one-way current conducting device, wherein the one-way current conducting device is positioned between the memristor cell output and the circuit ground, or between the read line and the memristor cell input.Type: ApplicationFiled: April 30, 2015Publication date: January 11, 2018Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Ning GE, Wai Mun Wong, Leong Yap Chia, Ser Chia Koh
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Publication number: 20180012900Abstract: The present subject matter relates to an integrated circuit comprising an erasable programmable read only memory (EPROM) array having a plurality of EPROM cells disposed in rows and columns, wherein one or more EPROM cells located at predetermined positions in the EPROM array are selectively dischargeable. The one or more EPROM cells comprise a EPROM transistor having a first conductive layer to store electrons upon the EPROM transistor being programmed and a control metal oxide semiconductor field-effect transistor (MOSFET) electrically connected to the first conductive layer to provide an electron leakage path to dissipate the electrons stored in the first conductive layer in a predetermined leak time period.Type: ApplicationFiled: January 29, 2015Publication date: January 11, 2018Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Wai Mun Wong, Leong Yap Chia, Ning Ge
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Publication number: 20170323961Abstract: In some examples, a semiconductor device includes a substrate, a first doped region formed in the substrate, a second doped region around and spaced apart from the first doped region, and a channel between the first and second doped regions and formed using a gate ring on the substrate as a mask. A gate is formed over only a portion of the channel, the gate being a portion of the gate ring.Type: ApplicationFiled: July 24, 2017Publication date: November 9, 2017Inventors: Ning GE, Leong Yap CHIA, Pin Chin LEE, Jose Jehrome RANDO