Patents by Inventor Li-Chi Yu

Li-Chi Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Contact structure of semiconductor device
    Patent number: 9048317
    Abstract: The disclosure relates to a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface; a fin structure extending upward from the substrate major surface, wherein the fin structure comprises a first fin, a second fin, and a third fin between the first fin and second fin; a first germanide over the first fin, wherein a first bottom surface of the first germanide has a first acute angle to the major surface; a second germanide over the second fin on a side of the third fin opposite to first germanide substantially mirror-symmetrical to each other; and a third germanide over the third fin, wherein a third bottom surface of the third germanide has a third acute angle to the major surface less than the first acute angle.
    Type: Grant
    Filed: July 31, 2013
    Date of Patent: June 2, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Clement Hsingjen Wann, Ling-Yen Yeh, Chi-Wen Liu, Chi-Yuan Shih, Li-Chi Yu, Meng-Chun Chang, Ting-Chu Ko, Chung-Hsien Chen
  • Self-Aligned Dual-Metal Silicide and Germanide Formation
    Publication number: 20150041918
    Abstract: A method includes growing an epitaxy semiconductor region at a major surface of a wafer. The epitaxy semiconductor region has an upward facing facet facing upwardly and a downward facing facet facing downwardly. The method further includes forming a first metal silicide layer contacting the upward facing facet, and forming a second metal silicide layer contacting the downward facing facet. The first metal silicide layer and the second metal silicide layer comprise different metals.
    Type: Application
    Filed: August 9, 2013
    Publication date: February 12, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Clement Hsingjen Wann, Sey-Ping Sun, Ling-Yen Yeh, Chi-Yuan Shih, Li-Chi Yu, Chun Hsiung Tsai, Chin-Hsiang Lin, Neng-Kuo Chen, Meng-Chun Chang, Ta-Chun Ma, Gin-Chen Huang, Yen-Chun Huang
  • Contact Structure of Semiconductor Device
    Publication number: 20150035017
    Abstract: The disclosure relates to a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface; a fin structure extending upward from the substrate major surface, wherein the fin structure comprises a first fin, a second fin, and a third fin between the first fin and second fin; a first germanide over the first fin, wherein a first bottom surface of the first germanide has a first acute angle to the major surface; a second germanide over the second fin on a side of the third fin opposite to first germanide substantially mirror-symmetrical to each other; and a third germanide over the third fin, wherein a third bottom surface of the third germanide has a third acute angle to the major surface less than the first acute angle.
    Type: Application
    Filed: July 31, 2013
    Publication date: February 5, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Clement Hsingjen Wann, Ling-Yen Yeh, Chi-Wen Liu, Chi-Yuan Shih, Li-Chi Yu, Meng-Chun Chang, Ting-Chu Ko, Chung-Hsien Chen