Abstract: A method of fabricating an epitaxial layer includes providing a silicon substrate. A dielectric layer covers the silicon substrate. A recess is formed in the silicon substrate and the dielectric layer. A selective epitaxial growth process and a non-selective epitaxial growth process are performed in sequence to respectively form a first epitaxial layer and a second epitaxial layer. The first epitaxial layer does not cover the top surface of the dielectric layer. The recess is filled by the first epitaxial layer and the second epitaxial layer. Finally, the first epitaxial layer and the second epitaxial layer are planarized.

Abstract: A method of manufacturing a semiconductor structure is provided. First, a preliminary structure is provided. The preliminary structure has a first region and a second region, and the preliminary structure comprises a plurality of features in the first region. Then, a first polish stop layer is formed on the preliminary structure. The first polish stop layer comprises a concave portion in the second region, and the concave portion defines an opening. A first overlying layer is formed on the first polish stop layer. Thereafter, a second polish stop layer is formed on the first overlying layer. The second polish stop layer has a graduated change in composition. The second polish stop layer comprises a concave portion at least partially formed in the opening. A second overlying layer is formed on the second polish stop layer.

Abstract: A method of fabricating a gate cap layer includes providing a substrate with an interlayer dielectric disposed thereon, wherein a recess is disposed in the interlayer dielectric and a metal gate fills in a lower portion of the recess. Later, a cap material layer is formed to cover the interlayer dielectric and fill in an upper portion of the recess. After that, a first sacrifice layer and a second sacrifice layer are formed in sequence to cover the cap material layer. The first sacrifice layer has a composition different from a composition of the cap material layer. The second sacrifice layer has a composition the same as the composition of the cap material layer. Next, a chemical mechanical polishing process is preformed to remove the second sacrifice layer, the first sacrifice layer and the cap material layer above a top surface of the interlayer dielectric.

Abstract: A pixel electrode structure including a first electrode and a second electrode is provided. The first electrode has a first stripe electrode extended along a first direction and pleural first branch electrodes connected to the first strip electrode. The first branch electrodes include pleural first branch domain electrodes extended along a second direction and pleural second branch domain electrodes extended along a third direction substantially perpendicular to the second direction. The second electrode has a second stripe electrode extended along the first direction and pleural second branch electrodes connected to the second stripe electrode. The second branch electrodes include pleural third branch domain electrodes extended along the second direction and pleural fourth branch domain electrodes extended along the third direction. The first and the third branch domain electrodes are alternated to each other. The second and the fourth branch domain electrodes are alternated to each other.

Abstract: A method for manufacturing a semiconductor device and a device manufactured using the same are provided. According to the embodiment, substrate with a dielectric layer formed thereon is provided. Plural trenches are defined in the dielectric layer, and the trenches are isolated by the dielectric layer. A first barrier layer is formed in the trenches as barrier liners of the trenches, followed by filling the trenches with a conductor. Then, the conductor in the trenches is partially removed to form a plurality of recesses, wherein remained conductor has a flat surface. Next, a second barrier layer is formed in the recesses as barrier caps of the trenches.

Abstract: The present invention relates to an urchin-like iron oxide and a method for producing the urchin-like iron oxide. The urchin-like iron oxide comprises a core and multiple needle-like elongations protruded from the core. The needle-like elongations could be wire, rod, tube, cone, and flake. The length/width ratio of the needle-like elongation is high enough to apply in an optoelectronic field. The method in accordance with the present invention is to stably heat an iron-contained powder under room temperature by a thermal oxidation. The surface of the iron-contained powder is slow oxidized to form an urchin-like iron oxide with multiple uniform distributed needle-like elongations protruded from the surface. The size of each needle-like elongation is easily adjusted and changed by controlling the heating temperature. The method has advantages of simplified operation and lowered expense.

Abstract: A method for manufacturing a semiconductor device and a device manufactured using the same are provided. According to the embodiment, substrate with a dielectric layer formed thereon is provided. Plural trenches are defined in the dielectric layer, and the trenches are isolated by the dielectric layer. A first barrier layer is formed in the trenches as barrier liners of the trenches, followed by filling the trenches with a conductor. Then, the conductor in the trenches is partially removed to form a plurality of recesses, wherein remained conductor has a flat surface. Next, a second barrier layer is formed in the recesses as barrier caps of the trenches.

Abstract: A display device having a plurality of pixel units and a manufacturing method of the same are provided. The display device includes a first substrate assembly, a second substrate assembly, a liquid crystal mixture, and a pillared polymer network. The first substrate assembly includes a first substrate and a first electrode layer disposed on the first substrate. The second substrate assembly includes a second substrate. The liquid crystal mixture is disposed between the first and second substrate assemblies. The pillared polymer network is disposed between the first and second substrate assemblies and has a first end and second end. The first end abuts against the first substrate assembly and is disposed correspondingly to the first electrode layer. The second end abuts against the second substrate assembly. Each of the pixel units includes the pillared polymer network.

Abstract: A display device includes a first base substrate, a second base substrate, a liquid crystal layer, a conductive protrusion structure and an electrode structure. The second base substrate is disposed opposite to the first base substrate. The liquid crystal layer is disposed between the first and second base substrates. The conductive protrusion structure is disposed on one of the first and second base substrates. The electrode structure is at least disposed on the first or second base substrate having the conductive protrusion structure.

Abstract: A display device includes a first base substrate, a second base substrate, a liquid crystal layer, a conductive protrusion structure and an electrode structure. The second base substrate is disposed opposite to the first base substrate. The liquid crystal layer is disposed between the first and second base substrates. The conductive protrusion structure is disposed on one of the first and second base substrates. The electrode structure is at least disposed on the first or second base substrate having the conductive protrusion structure.

Abstract: A display device having a plurality of pixel units and a manufacturing method of the same are provided. The display device includes a first substrate assembly, a second substrate assembly, a liquid crystal mixture, and a pillared polymer network. The first substrate assembly includes a first substrate and a first electrode layer disposed on the first substrate. The second substrate assembly includes a second substrate. The liquid crystal mixture is disposed between the first and second substrate assemblies. The pillared polymer network is disposed between the first and second substrate assemblies and has a first end and second end. The first end abuts against the first substrate assembly and is disposed correspondingly to the first electrode layer. The second end abuts against the second substrate assembly. Each of the pixel units includes the pillared polymer network.

Abstract: A display device including a first substrate, a second substrate, and a liquid crystal layer is provided. The liquid crystal layer is disposed between the first substrate and the second substrate. The liquid crystal layer includes a liquid crystal mixture and a nano carbon material. The nano carbon material is distributed in the liquid crystal mixture.

Abstract: A pixel electrode structure including a first electrode and a second electrode is provided. The first electrode has a first stripe electrode extended along a first direction and pleural first branch electrodes connected to the first strip electrode. The first branch electrodes include pleural first branch domain electrodes extended along a second direction and pleural second branch domain electrodes extended along a third direction substantially perpendicular to the second direction. The second electrode has a second stripe electrode extended along the first direction and pleural second branch electrodes connected to the second stripe electrode. The second branch electrodes include pleural third branch domain electrodes extended along the second direction and pleural fourth branch domain electrodes extended along the third direction. The first and the third branch domain electrodes are alternated to each other. The second and the fourth branch domain electrodes are alternated to each other.

Abstract: The present invention relates to an urchin-like iron oxide and a method for producing the urchin-like iron oxide. The urchin-like iron oxide comprises a core and multiple needle-like elongations protruded from the core. The needle-like elongations could be wire, rod, tube, cone, and flake. The length/width ratio of the needle-like elongation is high enough to apply in an optoelectronic field. The method in accordance with the present invention is to stably heat an iron-contained powder under room temperature by a thermal oxidation. The surface of the iron-contained powder is slow oxidized to form an urchin-like iron oxide with multiple uniform distributed needle-like elongations protruded from the surface. The size of each needle-like elongation is easily adjusted and changed by controlling the heating temperature. The method has advantages of simplified operation and lowered expense.

Abstract: The invention provides a high-speed rotor assembly for an overhung centrifugal compressor comprising a housing, a rotor component, an oil film damper and an impeller, which is adapted for connecting to a power output mechanism, wherein the rotor component is arranged inside the housing, and the oil film damper is disposed between the impeller and the rotor component, and the impeller is coupled to the rotor component. The rotor component further comprises a sleeve, a first bearing, a second bearing, a transmission shaft, a plurality of resilient elements and a spacer, wherein an end of the sleeve is connected to one of the circular rib by a screw while another end thereof is handing freely, and a oil film damper is disposed between the sleeve and another circular rib.

Abstract: The present invention provides a micro loop thermosyphon cooler, having a thermal absorption unit and a condenser sequentially arranged therein, wherein the condenser is arranged at a position higher than that of the thermal absorption unit by a height. The thermal absorption unit further comprises a microchannel system formed by superimposing a cover on a substrate having a plurality of micro-grooves arranged thereon, so that the microchannel system is capable of allowing a fluid with a plurality of magnetic particles to flow in and through. In this regard the thermal absorption unit is used for absorbing thermal energy and thus enabling the fluid to vaporize and generate bubbles accordingly for elevating and driving the remaining fluid to flow into the condenser for discharging heat.

Abstract: The invention discloses a microchannel cooling device, adapted for dissipating heat generated from an electronic device, which comprises: a heat sink, being arranged on the electronic device and having an inlet, an outlet and a plurality of microchannels embedded thereon for receiving a ferrofluid to flow therein; a condenser, having an outlet connected to the inlet of the heat sink and an inlet connected to the outlet of the heat sink; and a magnetocaloric pump, for providing a magnetic field to the ferrofluid flowing in the heat sink; wherein the magnetocaloric effect (MCE) caused by the working of the magnetic field on the ferrofluid flowing in the heat sink is used for driving the ferrofluid to flow through the plural microchannels of the heat sink while absorbing heat therefrom, and thereafter, the heated ferrofluid flow into the condenser for discharging heat and then the cool-down ferrofluid is guided back to the heat sink to complete a circulation.

Abstract: A ferrofluid power generator with micro vortex generator is disclosed, which is capable of generating an induced current by enabling a ferrofluid having a plurality of magnetic particles to flow in a closed circuit, the device comprising a vortex generator and a induced current unit. The vortex generator further comprises a first inlet, a first outlet and a plurality of cavities, which is capable of accelerating the rotation speed of the magnetic particles by virtue of employing the plural cavities to enable the magnetic particles to rotate while the ferrofluid passing through the plural cavities. The induced current unit is substantially a tube having a second inlet and a second outlet, where the second inlet is coupled to the first outlet of the vortex generator for accepting the ferrofluid with rotating magnetic particles to flow therein and through so as to induce a change of magnetic flux to occur and generate an induced current accordingly.

Abstract: A device and method for ferrofluid power generator and cooling system, wherein the waste heat of electronic device is used as a heat source to vaporize fluid and form bubbles as a forwarding pump of the ferrofluid. The fluid with magnetic nano particles is pumped forward and rotated by a fluid mechanism, then passes through a high density coil to result in the time varying magnetic flux and induced current. No additional heat-dissipating device is needed for this invention to dispose the waste heat, which requires the waste heat to produce electricity, which provides cooling and saves power.

Abstract: A ferrofluid power generator with micro vortex generator is disclosed, which is capable of generating an induced current by enabling a ferrofluid having a plurality of magnetic particles to flow in a closed circuit, the device comprising a vortex generator and a induced current unit. The vortex generator further comprises a first inlet, a first outlet and a plurality of cavities, which is capable of accelerating the rotation speed of the magnetic particles by virtue of employing the plural cavities to enable the magnetic particles to rotate while the ferrofluid passing through the plural cavities. The induced current unit is substantially a tube having a second inlet and a second outlet, where the second inlet is coupled to the first outlet of the vortex generator for accepting the ferrofluid with rotating magnetic particles to flow therein and through so as to induce a change of magnetic flux to occur and generate an induced current accordingly.