Abstract: A method for forming a semiconductor device structure is provided. The method includes receiving a structure having a first portion and a second portion, and a top surface of the first portion is higher than a top surface of the second portion. The method also includes forming a first material layer over the first portion and the second portion of the structure and forming a first material layer over the first portion and the second portion of the structure. The method further includes thinning the second material layer until the first material layer is exposed and removing a portion of the second material layer over the second portion of the structure to expose the first material layer thereunder. In addition, the method includes thinning the first material layer to expose the structure.

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a H3PO4 solution.

Abstract: A method includes forming a dummy gate of a transistor at a surface of a wafer, removing the dummy gate, and filling a metallic material into a trench left by the removed dummy gate. A Chemical Mechanical Polish (CMP) is then performed on the metallic material, wherein a remaining portion of the metallic material forms a metal gate of the transistor. After the CMP, a treatment is performed on an exposed top surface of the metal gate using an oxidation-and-etching agent comprising chlorine and oxygen.

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a H3PO4 solution.

Abstract: A method includes forming a dummy gate of a transistor at a surface of a wafer, removing the dummy gate, and filling a metallic material into a trench left by the removed dummy gate. A Chemical Mechanical Polish (CMP) is then performed on the metallic material, wherein a remaining portion of the metallic material forms a metal gate of the transistor. After the CMP, a treatment is performed on an exposed top surface of the metal gate using an oxidation-and-etching agent comprising chlorine and oxygen.

Abstract: A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate and forming a metal gate stack including a metal gate electrode over the semiconductor substrate. The method also includes applying an oxidizing solution containing an oxidizing agent over the metal gate electrode to oxidize the metal gate electrode to form a metal oxide layer on the metal gate electrode.

Abstract: A chemical mechanical polishing (CMP) system includes an O3/DIW generator, a polishing unit, and a cleaning unit. The O3/DIW generator is configured to generate an O3/DIW solution including ozone gas (O3) dissolved in deionized water (DIW). The polishing unit includes components for buffing a surface of a semiconductor structure, and a pipeline coupled to the O3/DIW generator to receive the O3/DIW solution for the buffing. The cleaning unit is coupled to the O3/DIW generator and is configured to clean the surface of the semiconductor structure using the O3/DIW solution.

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor structure including a metal gate (MG) layer formed to fill in a trench between two adjacent interlayer dielectric (ILD) regions; performing a chemical mechanical polishing (CMP) process using a CMP system to planarize the MG layer and the ILD regions; and cleaning the planarized MG layer using a O3/DIW solution including ozone gas (O3) dissolved in deionized water (DIW). The MG layer is formed on the ILD regions.

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a H3PO4 solution.

Abstract: A method includes forming a dummy gate of a transistor at a surface of a wafer, removing the dummy gate, and filling a metallic material into a trench left by the removed dummy gate. A Chemical Mechanical Polish (CMP) is then performed on the metallic material, wherein a remaining portion of the metallic material forms a metal gate of the transistor. After the CMP, a treatment is performed on an exposed top surface of the metal gate using an oxidation-and-etching agent comprising chlorine and oxygen.

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a H3PO4 solution.

Abstract: A method includes forming a dummy gate of a transistor at a surface of a wafer, removing the dummy gate, and filling a metallic material into a trench left by the removed dummy gate. A Chemical Mechanical Polish (CMP) is then performed on the metallic material, wherein a remaining portion of the metallic material forms a metal gate of the transistor. After the CMP, a treatment is performed on an exposed top surface of the metal gate using an oxidation-and-etching agent comprising chlorine and oxygen.

Abstract: A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate and forming a metal gate stack including a metal gate electrode over the semiconductor substrate. The method also includes applying an oxidizing solution containing an oxidizing agent over the metal gate electrode to oxidize the metal gate electrode to form a metal oxide layer on the metal gate electrode.

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a H3PO4 solution.

Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate with a metal gate stack formed on the semiconductor substrate, and the metal gate stack includes a metal gate electrode. The semiconductor device also includes a metal oxide layer formed over the metal gate stack and in direct contact with the metal gate electrode, and a thickness of the metal oxide layer is in a range from about 15 ? to about 40 ?. The metal oxide layer has a first portion made of an oxidized material of the metal gate electrode and has a second portion made of a material different from that of the first portion.

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor structure including a metal gate (MG) layer formed to fill in a trench between two adjacent interlayer dielectric (ILD) regions; performing a chemical mechanical polishing (CMP) process using a CMP system to planarize the MG layer and the ILD regions; and cleaning the planarized MG layer using a O3/DIW solution including ozone gas (O3) dissolved in deionized water (DIW). The MG layer is formed on the ILD regions.

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor substrate and forming a structure over the semiconductor substrate. The structure includes a sacrificial dielectric on the semiconductor substrate and a dummy gate over the sacrificial dielectric. The method further includes removing the dummy gate and the sacrificial dielectric from the structure thereby forming a trench. The method further includes filling a metal layer into the trench and covering over a top surface of an inter layer dielectric (ILD). The method also includes performing a chemical mechanical polishing (CMP) to expose the top surface of the ILD and heating the top surface of the ILD. Moreover, the method includes forming an etch stop layer on the top surface of the ILD.

Abstract: A method includes forming a dummy gate of a transistor at a surface of a wafer, removing the dummy gate, and filling a metallic material into a trench left by the removed dummy gate. A Chemical Mechanical Polish (CMP) is then performed on the metallic material, wherein a remaining portion of the metallic material forms a metal gate of the transistor. After the CMP, a treatment is performed on an exposed top surface of the metal gate using an oxidation-and-etching agent comprising chlorine and oxygen.

Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate with a metal gate stack formed on the semiconductor substrate, and the metal gate stack includes a metal gate electrode. The semiconductor device also includes a metal oxide layer formed over the metal gate stack and in direct contact with the metal gate electrode, and a thickness of the metal oxide layer is in a range from about 15 ? to about 40 ?. The metal oxide layer has a first portion made of an oxidized material of the metal gate electrode and has a second portion made of a material different from that of the first portion.

Abstract: A highly efficient thermoelectric material with one end coated in silver adhesive and placed in a high temperature furnace to heat and diffuse the silver adhesive into the homogeneous thermoelectric material, thereby producing an non-uniform thermoelectric material one-side doped thermoelectric material. The non-uniform thermoelectric material one-side doped thermoelectric material is able to achieve a high thermoelectric figure of merit.