Abstract: An electrode structure of a lithium ion battery includes a current collector, at least one energy type active layer, and at least one power type active layer. The energy type active layer and the power type active layer are formed on the current collector. The energy type active layer includes a first lithium-containing compound and multiple first conductive particles. The power type active layer includes a second lithium-containing compound and multiple second conductive particles. The first and second lithium-containing compounds are lithium-containing complex transitional metal oxides. Compositions of the first and second lithium-containing compounds include at least one of Ni, Co and Mn. A lithium ion diffusion coefficient of the second lithium-containing compound is greater than that of the first lithium-containing compound. A specific capacity of the first lithium-containing compound is greater than that of the second lithium-containing compound.

Abstract: A varnish composition includes composition (A): an epoxy resin, composition (B): a hardener, composition (C): an accelerator, composition (D): phosphor-containing flame retardant, and composition (E): fillers, wherein composition (A) includes composition (A-1): phosphor-containing epoxy resin, phosphor-containing and silicon-containing epoxy resin, or a mixture thereof; composition (A-2): dicyclopentadiene epoxy resin; and composition (A-3): oxazolidone epoxy resin.

Abstract: The present invention presents an effective Cycle-count Accurate Transaction level (CCA-TLM) full bus modeling and simulation technique. Using the two-phase arbiter and master-slave models, an FSM-based Composite Master-Slave-pair and Arbiter Transaction (CMSAT) model is proposed for efficient and accurate dynamic simulations. This approach is particularly effective for bus architecture exploration and contention analysis of complex Multi-Processor System-on-Chip (MPSoC) designs.

Abstract: The present invention discloses a cycle-count-accurate (CCA) processor modeling, which can achieve high simulation speeds while maintaining timing accuracy of the system simulation. The CCA processor modeling includes a pipeline subsystem model and a cache subsystem model with accurate cycle with accurate cycle count information and guarantees accurate timing and functional behaviors on processor interface. The CCA processor modeling further includes a branch predictor and a bus interface (BIF) to predict the branch of pipeline execution behavior (PEB) and to simulate the data accesses between the processor and the external components via an external bus, respectively. The experimental results show that the CCA processor modeling performs 50 times faster than the corresponding Cycle-accurate (CA) model while providing the same cycle count information as the target RTL model.

Abstract: A varnish composition includes composition (A): an epoxy resin, composition (B): a hardener, composition (C): an accelerator, composition (D): phosphor-containing flame retardant, and composition (E): fillers, wherein composition (A) includes composition (A-1): phosphor-containing epoxy resin, phosphor-containing and silicon-containing epoxy resin, or a mixture thereof; composition (A-2): dicyclopentadiene epoxy resin; and composition (A-3): oxazolidone epoxy resin.

Abstract: A composition for preparing a halogen-free resin is provided, the composition including a halogen-free phosphorated epoxy, a urethane-modified copolyester, a curing agent, a filler, a surfactant, and a solvent. A halogen-free prepreg is also provided, including a glass fabric cloth and a halogen-free resin layer on the glass fabric. The halogen-free resin layer is made from the foregoing halogen-free resin.

Abstract: A halogen-free varnish includes (A) resin, (B) curing agent, (C) flame inhibitor (flame-retarding agent), (D) accelerator and (E) additives. Resin of (A) has novolac epoxy resin, DOPO-CNE and DOPO-HQ-CNE. Curing agent of (B) includes Benzoxazine resin and phenol novolac resin. Glass fabric cloth is dipped into the halogen-free varnish so as to form a prepreg with better thermal stability, anti-flammability, low absorbent ability and higher curing rate. Furthermore, the prepreg has more toughness.

Abstract: A varnish includes resin and composite curing agent. The composite curing agent includes curing agent of polyphenylene methylphosphonate resin and curing agent of phenol resin. Glass fabric cloth is dipped into the varnish so as to form a prepreg with better thermal stability, anti-flammability, and low absorbent ability. Furthermore, the composite curing agent can be provided for higher curing rate.

Abstract: A halogen-free varnish includes (A) resin, (B) curing agent, (C) flame inhibitor (flame-retarding agent), (D) accelerator and (E) additives. Resin of (A) has novolac epoxy resin, DOPO-CNE and DOPO-HQ-CNE. Curing agent of (B) includes Benzoxazine resin and phenol novolac resin. Glass fabric cloth is dipped into the halogen-free varnish so as to form a prepreg with better thermal stability, anti-flammability, low absorbent ability and higher curing rate. Furthermore, the prepreg has more toughness.

Abstract: A halogen-free varnish includes epoxy resin, composite curing agent, condensed phosphate, and filler. The composite curing agent includes Benzoxazine (BZ) resin and amino triazine novolac (ATN) resin. The filler has aluminium hydroxide and silica. Glass fabric is dipped into the varnish so as to form a prepreg with better thermal stability, anti-flammability, and low moisture absorption.

Abstract: A varnish includes resin and composite curing agent. The composite curing agent includes curing agent of polyphenylene methylphosphonate resin and curing agent of phenol resin. Glass fabric cloth is dipped into the varnish so as to form a prepreg with better thermal stability, anti-flammability, and low absorbent ability. Furthermore, the composite curing agent can be provided for higher curing rate.

Abstract: A halogen-free varnish includes epoxy resin, composite curing agent, condensed phosphate, and filler. The composite curing agent includes Benzoxazine (BZ) resin and amino triazine novolac (ATN) resin. The filler has aluminium hydroxide and silica.

Abstract: A resin composition contains a solvent and a solid content dispersed in the solvent. The solid content does not contain phenolic resin. The solid content contains a benzoxazine resin and a phosphorus-containing epoxy resin. The weight ratio of the benzoxazine resin to phosphorus-containing epoxy resin is about 0.6:1 to about 3.0:1. A circuit board substrate and a copper clad laminate fabricated with the resin composition mentioned above are disclosed too.

Abstract: A composition for preparing a halogen-free resin is provided, the composition including a halogen-free phosphorated epoxy, a urethane-modified copolyester, a curing agent, a filler, a surfactant, and a solvent. A halogen-free prepreg is also provided, including a glass fabric cloth and a halogen-free resin layer on the glass fabric. The halogen-free resin layer is made from the foregoing halogen-free resin.

Abstract: The present invention discloses a method for fabricating a carbon membrane having pore regularity. The method comprises: providing a template having a plurality of pores arranged regularly; performing a tubular carbon forming process in the regularly-arranged pores; then performing a removal process to form an annular cavity; performing a carbon forming process in the annular cavity to combine the carbon in the annular cavity with the tubular carbon to thereby form a carbon substance having a thick wall; and repeatedly performing the removal process and the carbon forming process so as to form a carbon membrane having pore regularity.

Abstract: A resin composition contains a solvent and a solid content dispersed in the solvent. The solid content does not contain phenolic resin. The solid content contains a benzoxazine resin and a phosphorus-containing epoxy resin. The weight ratio of the benzoxazine resin to phosphorus-containing epoxy resin is about 0.6:1 to about 3.0:1. A circuit board substrate and a copper clad laminate fabricated with the resin composition mentioned above are disclosed too.

Abstract: An integrated defect yield management and query system for a semiconductor wafer fabrication process is disclosed. A local area network connects various testing devices for testing defect conditions of wafers, a defect yield management server and a client device. After inspection, these devices generate a plurality of process records corresponding to each of the semiconductor wafers. The defect yield management server retrieves the process records through the local area network. These process records are stored in a database divided into a plurality of fields, wherein each field corresponds to a specific defect property of the semiconductor wafers. Therefore, these acquired on-line data and their related history records can be accessed by using an inquiring interface, and the client device can effectively poll the process records stored in the database of the defect yield management server.

Abstract: A method is disclosed for increasing the capacitance of high-density DRAM devices by microlithographic patterning. A semiconductor substrate having a MOS transistor comprising a gate and source/drain regions, and a word line and a bit line is provided. A layer of inter-poly oxide is deposited over the substrate and planarized. Contact holes are etched in the oxide layer until the substrate is exposed. A layer of photoresist is next blanket deposited over the substrate. Using microlithographic methods, the photoresist is then patterned with in-line or staggered micron size features and the underlying inter-poly oxide layer is etched using the photoresist as a mask. The resulting inter-poly oxide surface, therefore, acquires the shape of a micro-folded topography having a roughened surface area of many folds larger than the original flat surface.

Abstract: A method for fabricating an improved connection between active device regions in silicon, to overlying metallization levels, has been developed. A LPCVD tungsten contact plug process, which results in optimum coplanarity between the top surface of the tungsten plug and the surrounding insulator surface, has been created.