Abstract: A copolymer, a film composition and a composite material employing the same are provided. The copolymer is a copolymerization product of a composition, wherein the composition includes a monomer (a), a monomer (b) and a monomer (c). The monomer (a) is a compound having a structure represented by Formula (I), the monomer (b) is a compound having a structure represented by Formula (II), and the monomer (c) is a compound having a structure represented by Formula (III) wherein R1, R2, R3, R4, R5 and R6 are as defined in specification.

Abstract: A copolymer, a film composition and a composite material employing the same are provided. The copolymer is a copolymerization product of a composition, wherein the composition includes a monomer (a), a monomer (b) and a monomer (c). The monomer (a) is a compound having a structure represented by Formula (I), the monomer (b) is a compound having a structure represented by Formula (II), and the monomer (c) is a compound having a structure represented by Formula (III) wherein R1, R2, R3, R4, R5 and R6 are as defined in specification.

Abstract: A data writing method, a memory control circuit unit, and a memory storage device are provided. The method includes: receiving a first sub-data of a plurality of sub-data of a first data and generating a first error detecting code corresponding to the first sub-data; receiving a second sub-data of the plurality of sub-data of the first data and generating a second error detecting code corresponding to the second sub-data; combining the first error detecting code and the second error detecting code to obtain a third error detecting code, wherein the third error detecting code is used to check whether a second data formed by combining the first sub-data and the second sub-data has an error; and storing the second data and the third error detecting code into a rewritable non-volatile memory module.

Abstract: A data writing method, a memory control circuit unit, and a memory storage device are provided. The method includes: receiving a first sub-data of a plurality of sub-data of a first data and generating a first error detecting code corresponding to the first sub-data; receiving a second sub-data of the plurality of sub-data of the first data and generating a second error detecting code corresponding to the second sub-data; combining the first error detecting code and the second error detecting code to obtain a third error detecting code, wherein the third error detecting code is used to check whether a second data formed by combining the first sub-data and the second sub-data has an error; and storing the second data and the third error detecting code into a rewritable non-volatile memory module.

Abstract: An oligomer, composition, and composite material employing the same are provided. The oligomer has a structure represented by Formula (I) wherein R1 and R2 are independently hydrogen, C1-20 alkyl group, C2-20 alkenyl group, C6-12 aryl group, C6-12 alkylaryl group, C5-12 cycloalkyl group, C6-20 cycloalkylalkyl group, alkoxycarbonyl group, or alkylcarbonyloxy group; R1 is not hydrogen when R2 is hydrogen; a is 0 or 1; n?0; m?1; n:m is from 0:100 to 99:1; the oligomer has a number average molecular weight of less than or equal to 12,000; and the repeat unit and the repeat unit are arranged in a random or block fashion.

Abstract: An error processing method for a rewritable non-volatile memory module, a memory storage device and a memory controlling circuit unit are provided. The rewritable non-volatile memory module includes a plurality of memory cells. The error processing method includes: sending a first read command sequence for reading a plurality of bits from the memory cells; performing a first decoding on the bits; determining whether each error belongs to a first type error or a second type error if the bits have at least one error; recording related information of a first error in the at least one error if the first error belongs to the first type error; and not recording the related information of the first error if the first error belongs to the second type error. Accordingly, errors with particular type may be processed suitably.

Abstract: An oligomer, composition, and composite material employing the same are provided. The oligomer has a structure represented by Formula (I) wherein R1 and R2 are independently hydrogen, C1-20 alkyl group, C2-20 alkenyl group, C6-12 aryl group, C6-12 alkylaryl group, C5-12 cycloalkyl group, C6-20 cycloalkylalkyl group, alkoxycarbonyl group, or alkylcarbonyloxy group; R1 is not hydrogen when R2 is hydrogen; a is 0 or 1; n?0; m?1; n:m is from 0:100 to 99:1; the oligomer has a number average molecular weight of less than or equal to 12,000; and the repeat unit and the repeat unit are arranged in a random or block fashion.

Abstract: An oligomer, composition, and composite material employing the same are provided. The oligomer has a structure represented by Formula (I) wherein R1 and R2 are independently hydrogen, C1-20 alkyl group, C2-20 alkenyl group, C6-12 aryl group, C6-12 alkylaryl group, C5-12 cycloalkyl group, C6-20 cycloalkylalkyl group, alkoxycarbonyl group, or alkylcarbonyloxy group; R1 is not hydrogen when R2 is hydrogen; a is 0 or 1; n?0; m?1; n:m is from 0:100 to 99:1; the oligomer has a number average molecular weight of less than or equal to 12,000; and the repeat unit and the repeat unit are arranged in a random or block fashion.

Abstract: A method for writing data, a memory storage device and a memory control circuit unit are provided. The method includes receiving a write command and first data corresponding to the write command, obtaining initial data transmission information of the first data and determining whether the initial data transmission information conforms to a predetermined condition, compressing the first data to second data and writing the second data into a rewritable non-violate memory module if the initial data transmission information conforms to the predetermined condition, and writing the uncompressed first data into the rewritable non-violate memory module if the initial data transmission information does not conform to the predetermined condition.

Abstract: A disclosure provides a resin composition, a prepreg, and a substrate employing the same. According to an embodiment of the disclosure, the resin composition includes a polyphenylene ether compound, and a bismaleimide. The prepreg includes a cured product of the resin composition. The substrate includes a product fabricated by the resin composition or the prepreg.

Abstract: A data managing method, and a memory control circuit unit and a memory storage apparatus using the same are provided. The data managing method including: reading a first data stream from a first physical erasing unit according to a first reading command, wherein the first data stream includes first user data, a first error correcting code and a first error detecting code. The method also includes: using the first error correcting code and error detecting code to decode the first user data and determining whether the first user data is decoded successfully. The method further includes: if the first user data is decoded successfully, transmitting corrected user data obtained by correctly decoding the first user data to the host system in response to the first reading command.

Abstract: A data writing method for a rewritable non-volatile memory module is provided. The present method includes compressing an original data to generate a first data and determining whether the length of the first data is smaller than a predetermined length. The present method also includes outputting the first data as a compressed data when the length of the first data is not smaller than the predetermined length. The present method further includes generating an ECC code corresponding to the compressed data, generating an ECC frame according to the compressed data and the ECC code, and writing the ECC frame into the rewritable non-volatile memory module. Accordingly, when data corresponding to the original data is read from the rewritable non-volatile memory module, error bits in the data can be corrected and the original data can be restored according to the ECC code.

Abstract: An error processing method for a rewritable non-volatile memory module, a memory storage device and a memory controlling circuit unit are provided. The rewritable non-volatile memory module includes a plurality of memory cells. The error processing method includes: sending a first read command sequence for reading a plurality of bits from the memory cells; performing a first decoding on the bits; determining whether each error belongs to a first type error or a second type error if the bits have at least one error; recording related information of a first error in the at least one error if the first error belongs to the first type error; and not recording the related information of the first error if the first error belongs to the second type error. Accordingly, errors with particular type may be processed suitably.

Abstract: Provided is an electromagnetic wave shielding structure, including: a substrate; and a porous composite film formed on the substrate, wherein the porous composite film includes a continuous phase network fused from a plurality of metal nanoparticles, a first resin composition coated on a surface of the continuous phase network and a plurality of holes which are void spaces in the continuous phase network coated with the first resin composition.

Abstract: A data processing method adapted for a rewritable non-volatile memory module is provided. The method includes receiving a first data stream and performing an error-correction encoding procedure on the first data stream to generate an original error checking and correcting (ECC) code corresponding to the first data stream. The method also includes converting the original ECC code into a second ECC code according to a second rearrangement rule, and the original ECC code is different from the second ECC code. The method further includes respectively writing the first data stream and the second ECC code into a data bit area and an error-correction code bit area of the same or different physical programming units in the rewritable non-volatile memory module.

Abstract: A data managing method, and a memory control circuit unit and a memory storage apparatus using the same are provided. The data managing method including: reading a first data stream from a first physical erasing unit according to a first reading command, wherein the first data stream includes first user data, a first error correcting code and a first error detecting code. The method also includes: using the first error correcting code and error detecting code to decode the first user data and determining whether the first user data is decoded successfully. The method further includes: if the first user data is decoded successfully, transmitting corrected user data obtained by correctly decoding the first user data to the host system in response to the first reading command.

Abstract: A method for writing data, a memory storage device and a memory control circuit unit are provided. The method includes receiving a write command and first data corresponding to the write command, obtaining initial data transmission information of the first data and determining whether the initial data transmission information conforms to a predetermined condition, compressing the first data to second data and writing the second data into a rewritable non-violate memory module if the initial data transmission information conforms to the predetermined condition, and writing the uncompressed first data into the rewritable non-violate memory module if the initial data transmission information does not conform to the predetermined condition.

Abstract: A disclosure provides a resin composition, a prepreg, and a substrate employing the same. According to an embodiment of the disclosure, the resin composition includes a polyphenylene ether compound, and a bismaleimide. The prepreg includes a cured product of the resin composition. The substrate includes a product fabricated by the resin composition or the prepreg.

Abstract: Provided is an electromagnetic wave shielding structure, including: a substrate; and a porous composite film formed on the substrate, wherein the porous composite film includes a continuous phase network fused from a plurality of metal nanoparticles, a first resin composition coated on a surface of the continuous phase network and a plurality of holes which are void spaces in the continuous phase network coated with the first resin composition.

Abstract: A data processing method adapted for a rewritable non-volatile memory module is provided. The method includes receiving a first data stream and performing an error-correction encoding procedure on the first data stream to generate an original error checking and correcting (ECC) code corresponding to the first data stream. The method also includes converting the original ECC code into a second ECC code according to a second rearrangement rule, and the original ECC code is different from the second ECC code. The method further includes respectively writing the first data stream and the second ECC code into a data bit area and an error-correction code bit area of the same or different physical programming units in the rewritable non-volatile memory module.